Tungsten diselenide for all-fiber lasers with the chemical vapor deposition method

Nanoscale ◽  
2018 ◽  
Vol 10 (17) ◽  
pp. 7971-7977 ◽  
Author(s):  
Wenjun Liu ◽  
Mengli Liu ◽  
Jinde Yin ◽  
Hao Chen ◽  
Wei Lu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Fiber Lasers ◽  
Modulation Depth ◽  
Chemical Vapor ◽  
Damage Threshold ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
Tungsten Diselenide ◽  
Laser Induced Damage

The laser induced damage threshold and modulation depth of SAs are prominently improved with WSe2 films.

Q-switched all-fiber laser based on MoSe2 films with chemical vapor deposition method

2019 ◽  
Vol 28 (02) ◽  
pp. 1950019 ◽  
Author(s):  
Xin Zhang ◽  
Yanli Yao ◽  
Shubin Wang ◽  
Guoli Ma ◽  
Ming Lei ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Modulation Depth ◽  
Chemical Vapor ◽  
Experimental Result ◽  
Chemical Vapor Deposition Method ◽  
Absorption Characteristic ◽  
Saturable Absorption ◽  
Deposition Method ◽  
Optical Modulators

In this work, MoSe2 film is synthesized by the chemical vapor deposition method. Saturable absorber (SA) is assembled with the tapered fiber and MoSe2 films. Q-switched operation is achieved with the MoSe2-based SA. The experimental result reveals that the MoSe2-based SA has excellent saturable absorption characteristic with 23.41% modulation depth. When the pump power is greater than 289.2[Formula: see text]mW, Q-switched all-fiber lasing action is demonstrated. The repetition rate of the Q-switched pulses varies from 185.6 to 252.8[Formula: see text]kHz. The shortest pulse duration is 801.9[Formula: see text]ns, and the largest output energy is 69.3[Formula: see text]nJ. Results indicate that MoSe2 films can provide new opportunities for large-modulation-depth optical modulators in ultrafast photonics.

Anisotropic growth mechanism of tungsten diselenide domains using chemical vapor deposition method

2018 ◽  
Vol 432 ◽  
pp. 170-175 ◽  
Author(s):  
Yoobeen Lee ◽  
Heekyung Jeong ◽  
Yi-Seul Park ◽  
Seulki Han ◽  
Jaegeun Noh ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Anisotropic Growth ◽  
Deposition Method ◽  
Tungsten Diselenide

Anisotropic Plasma ChemicalVapor Deposition of Copper Films in Trenches

2003 ◽  
Vol 766 ◽  
Author(s):  
Kosuke Takenaka ◽  
Masao Onishi ◽  
Manabu Takenshita ◽  
Toshio Kinoshita ◽  
Kazunori Koga ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Anisotropic Plasma ◽  
Bottom Surface ◽  
Chemical Vapor Deposition Method ◽  
Copper Films ◽  
Deposition Method ◽  
Via Holes

AbstractAn ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.

scholarly journals Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Zhenzhen Tian ◽  
Xiaoming Yuan ◽  
Ziran Zhang ◽  
Wuao Jia ◽  
Jian Zhou ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Driving Force ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Nanowire Growth ◽  
Calphad Approach ◽  
Deposition Method ◽  
Large Area ◽  
Growth Phenomenon

AbstractGrowth of high-quality III–V nanowires at a low cost for optoelectronic and electronic applications is a long-term pursuit of research. Still, controlled synthesis of III–V nanowires using chemical vapor deposition method is challenge and lack theory guidance. Here, we show the growth of InP and GaP nanowires in a large area with a high density using a vacuum chemical vapor deposition method. It is revealed that high growth temperature is required to avoid oxide formation and increase the crystal purity of InP nanowires. Introduction of a small amount of Ga into the reactor leads to the formation of GaP nanowires instead of ternary InGaP nanowires. Thermodynamic calculation within the calculation of phase diagrams (CALPHAD) approach is applied to explain this novel growth phenomenon. Composition and driving force calculations of the solidification process demonstrate that only 1 at.% of Ga in the catalyst is enough to tune the nanowire formation from InP to GaP, since GaP nucleation shows a much larger driving force. The combined thermodynamic studies together with III–V nanowire growth studies provide an excellent example to guide the nanowire growth.

Synthesis of greenish phosphorus on carbon substrate

2021 ◽  
Author(s):  
Haipeng Wang ◽  
Cheng Liu ◽  
HuiLi Wang ◽  
Xinpeng Han ◽  
Shaojie Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Formation Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Carbon Substrate ◽  
Deposition Method ◽  
Critical Factors ◽  
Simple Chemical

One of the phosphorus allotropes called greenish phosphorus was successfully synthesized by simple chemical vapor deposition method. We revealed that the critical factors in the formation mechanism of greenish phosphorus...

Lasing of CdSe/SiO2 nanocables synthesized by the facile chemical vapor deposition method

Nanoscale ◽  
2011 ◽  
Vol 3 (8) ◽  
pp. 3072 ◽  
Author(s):  
Yu Ye ◽  
Yaoguang Ma ◽  
Song Yue ◽  
Lun Dai ◽  
Hu Meng ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method
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