Graphene growth by molecular beam epitaxy: an interplay between desorption, diffusion and intercalation of elemental C species on islands

ABSTRACTA variety of optical methods are now available for studying surface processes and for monitoring layer thicknesses and compositions during semiconductor crystal growth by molecular beam epitaxy (MBE), organometallic chemical vapor deposition (OMCVD), and related techniques. Spectroellipsometry (SE) and spectroreflectometry (SR), the older, primarily bulk-sensitive probes, are now augmented by new, primarily surface-sensitive probes such as reflectance-difference spectroscopy (RDS), second-harmonic generation (SHG), and laser light scattering (LLS). Examples of real-time growth studies now include SE determinations of thicknesses and compositions of AlxGa1–xAs layers on GaAs by organometallic molecular beam epitaxy (OMMBE) to 10 Å thickness scales, RDS determinations of surface dielectric anisotropy spectra of various (001) GaAs surfaces relevant to crystal growth by MBE, and LLS determinations of the evolution of surface roughness during chemical vapor deposition (CVD) growth on Si. Proven capabilities suggest new applications, particularly to growth-interrupted and metastable systems.

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In situ reflectance difference spectroscopy of II–VI compounds: A real time study of N plasma doping during molecular beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.590811 ◽

1999 ◽

Vol 17 (4) ◽

pp. 1697 ◽

Cited By ~ 1

Author(s):

D. Stifter ◽

M. Schmid ◽

K. Hingerl ◽

A. Bonanni ◽

M. Garcia-Rocha ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Real Time ◽

Molecular Beam ◽

Time Study ◽

Difference Spectroscopy ◽

Reflectance Difference Spectroscopy ◽

Plasma Doping

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High-speed three-dimensional reciprocal-space mapping during molecular beam epitaxy growth of InGaAs

Journal of Applied Crystallography ◽

10.1107/s0021889812036175 ◽

2012 ◽

Vol 45 (5) ◽

pp. 1046-1053 ◽

Cited By ~ 10

Author(s):

Wen Hu ◽

Hidetoshi Suzuki ◽

Takuo Sasaki ◽

Miwa Kozu ◽

Masamitu Takahasi

Keyword(s):

Thin Film ◽

Molecular Beam Epitaxy ◽

Relaxation Process ◽

Real Time ◽

High Speed ◽

Molecular Beam ◽

Strain Relaxation ◽

Three Dimensional ◽

Reciprocal Space ◽

Reciprocal Space Mapping

This paper describes the development of a high-speed three-dimensional reciprocal-space mapping method designed for the real-time monitoring of the strain relaxation process during the growth of heterostructure semiconductors. Each three-dimensional map is obtained by combining a set of consecutive images, which are captured during the continuous rotation of the sample, and calculating the reciprocal-space coordinates from the detector coordinate system. To demonstrate the feasibility of this rapid mapping technique, the 022 asymmetric diffraction of an InGaAs/GaAs(001) thin film grown by molecular beam epitaxy was measured and the procedure for data calibration was examined. Subsequently, the proposed method was applied to real-time monitoring of the strain relaxation process during the growth of a thin-film heterostructure consisting of In0.07Ga0.93As and In0.18Ga0.82As layers consecutively deposited on GaAs(001). The time resolution of the measurement was 10 s. It was revealed that additional relaxation of the first In0.07Ga0.93As layer was induced by the growth of the second In0.18Ga0.82As layer within a short period of time corresponding to the deposition of only two monolayers of InGaAs.

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