Ultrathin silver telluride nanowire films and gold nanosheet electrodes for a flexible resistive switching device

Nanoscale ◽  
2018 ◽  
Vol 10 (12) ◽  
pp. 5424-5430 ◽  
Author(s):  
Ho Jun Seo ◽  
Wooseong Jeong ◽  
Sungwon Lee ◽  
Geon Dae Moon
Keyword(s):  
Resistive Switching ◽  
Two Dimensional ◽  
Switching Device ◽  
Silver Telluride

Ultrathin Te nanowire (NW) and Au nanosheet (NS) was assembled as two-dimensional macroscale films. The AuNS–Ag2TeNW–AuNS device is applicable to wearable resistive switching device due to their paper-like flexibility.

scholarly journals Resistance state evolution under constant electric stress on a MoS2 non-volatile resistive switching device

RSC Advances ◽  
2020 ◽  
Vol 10 (69) ◽  
pp. 42249-42255
Author(s):  
Xiaohan Wu ◽  
Ruijing Ge ◽  
Yifu Huang ◽  
Deji Akinwande ◽  
Jack C. Lee
Keyword(s):  
Resistive Switching ◽  
Constant Voltage ◽  
Switching Device ◽  
Current Stress ◽  
Electric Stress ◽  
State Evolution ◽  
Conductive Bridge ◽  
Resistance State ◽  
Switching Devices

Constant voltage and current stress were applied on MoS2 resistive switching devices, showing unique behaviors explained by a modified conductive-bridge-like model.

scholarly journals Multi-level characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Sera Kwon ◽  
Min-Jung Kim ◽  
Kwun-Bum Chung
Keyword(s):  
Resistive Switching ◽  
High Performance ◽  
Sio2 Nanoparticles ◽  
Visible Range ◽  
Resistive State ◽  
Switching Device ◽  
Structural Density ◽  
Multi Level ◽  
Switching Characteristics ◽  
Switching Devices

AbstractTiOx-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices. The fabrication of a multi-level switching device is a feasible method for increasing the density of the memory cell. Herein, we attempt to obtain a non-volatile multi-level switching memory device that is highly transparent by embedding SiO2 nanoparticles (NPs) into the TiOx matrix (TiOx@SiO2 NPs). The fully transparent resistive switching device is fabricated with an ITO/TiOx@SiO2 NPs/ITO structure on glass substrate, and it shows transmittance over 95% in the visible range. The TiOx@SiO2 NPs device shows outstanding switching characteristics, such as a high on/off ratio, long retention time, good endurance, and distinguishable multi-level switching. To understand multi-level switching characteristics by adjusting the set voltages, we analyze the switching mechanism in each resistive state. This method represents a promising approach for high-performance non-volatile multi-level memory applications.

A two-dimensional polymer memristor based on conformational change with tunable resistive switching behaviors

2021 ◽  
Author(s):  
Yaru Song ◽  
Guangyuan Feng ◽  
Lingli Wu ◽  
Enbing Zhang ◽  
Chenfang Sun ◽  
...  
Keyword(s):  
Low Power ◽  
Conformational Change ◽  
Resistive Switching ◽  
Two Dimensional ◽  
Change Mechanism

In this work, through rational monomer design we integrated the conformational change mechanism into a two-dimensional covalent polymer and implemented 3 different low-power memory behaviors on the same device by...

scholarly journals Memristive State Equation for Bipolar Resistive Switching Devices Based on a Dynamic Balance Model and its Equivalent Circuit Representation

2019 ◽  
Author(s):  
Enrique Miranda ◽  
Jordi Suñé
Keyword(s):  
Resistive Switching ◽  
Dynamic Balance ◽  
Electrical Stimulus ◽  
State Equation ◽  
Balance Model ◽  
Memory State ◽  
Bipolar Resistive Switching ◽  
Switching Device ◽  
Circuit Representation ◽  
Memristive Systems

A memory state equation consistent with several experimental observations is presented and discussed within the framework of Chua's memristive systems theory. The proposed equation describes the evolution of the memory state corresponding to a bipolar resistive switching device subjected to a variety of electrical stimulus.

Anticrosstalk characteristics correlated with the set process for α-Fe2O3/Nb–SrTiO3 stack-based resistive switching device

2010 ◽  
Vol 97 (26) ◽  
pp. 262112 ◽  
Author(s):  
Y. S. Chen ◽  
B. Chen ◽  
B. Gao ◽  
F. F. Zhang ◽  
Y. J. Qiu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Switching Device

Ferroelectric resistive switching behavior in two-dimensional materials/BiFeO3 hetero-junctions

Nanoscale ◽  
2018 ◽  
Vol 10 (48) ◽  
pp. 23080-23086 ◽  
Author(s):  
Yang Li ◽  
Xue-Yin Sun ◽  
Cheng-Yan Xu ◽  
Jian Cao ◽  
Zhao-Yuan Sun ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Switching Behavior ◽  
Ferroelectric Polarization ◽  
Two Dimensional ◽  
Resistive Switching Behavior ◽  
Two Dimensional Materials ◽  
Interface Modulation

We presented thickness-dependent ferroelectric resistive switching in 2D/BFO heterojunctions, which stems from ferroelectric polarization induced hetero-interface modulation.

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