Sonication-assisted liquid-phase exfoliated α-GeTe: a two-dimensional material with high Fe3+ sensitivity
Keyword(s):
Band Gap
◽
Few-layer and monolayer α-GeTe, a new member to the group of IV–VI 2D semiconducting materials with a suitable band gap, was prepared by sonication-assisted liquid phase exfoliation.
2017 ◽
Vol 52
(12)
◽
pp. 7256-7268
◽
Keyword(s):
2019 ◽
Vol 7
(39)
◽
pp. 22475-22486
◽
Keyword(s):