Negative transconductance and negative differential resistance in asymmetric narrow bandgap 2D–3D heterostructures

Nanoscale ◽  
2019 ◽  
Vol 11 (11) ◽  
pp. 4701-4706 ◽  
Author(s):  
Tiaoyang Li ◽  
Xuefei Li ◽  
Mengchuan Tian ◽  
Qianlan Hu ◽  
Xin Wang ◽  
...  
Keyword(s):  
Indium Arsenide ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Black Phosphorus ◽  
Band Alignment ◽  
Narrow Bandgap ◽  
Interband Tunneling ◽  
Broken Gap

We present a new tunneling transistor based on a 2D black phosphorus and 3D indium arsenide heterojunction with a broken-gap band alignment. The observed negative differential resistance and negative transconductance behaviors can be attributed to the interband tunneling.

scholarly journals Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD

2002 ◽  
Vol 25 (3) ◽  
pp. 245-248
Author(s):  
K. F. Yarn
Keyword(s):  
Schottky Diode ◽  
Negative Differential Resistance ◽  
Room Temperature ◽  
Thermionic Emission ◽  
Differential Resistance ◽  
Tunneling Effect ◽  
Peak Current Density ◽  
Interband Tunneling ◽  
First Time ◽  
Peak To Valley Ratio

An AlInP delta-doped schottky diode exhibiting negative differential resistance (NDR) behavior is demonstrated for the first time. The NDR characteristics with a peak to valley ratio of 5.5 and peak current density of1KA/cm2were achieved at room temperature. In addition, the maximum available power is estimated up to5W/cm2. The mechanism for such performance is phenomenologically analyzed by the combination of resonant interband tunneling (RIT) and thermionic emission processes associated with tunneling effect on the metal-semiconductor (MS) interface.

Modulation of Negative Differential Resistance in Black Phosphorus Transistors

2021 ◽  
pp. 2008329
Author(s):  
Ruiqing Cheng ◽  
Lei Yin ◽  
Rui Hu ◽  
Huijun Liu ◽  
Yao Wen ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Black Phosphorus

Emerging negative differential resistance effects and novel tunable electronic behaviors of the broken-gap KAgSe/SiC2 van der Waals heterojunction

2020 ◽  
Vol 8 (24) ◽  
pp. 8107-8119
Author(s):  
Qiang Wang ◽  
Yan Liang ◽  
Hui Yao ◽  
Jianwei Li ◽  
Bin Wang ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Van Der Waals ◽  
Differential Resistance ◽  
Broken Gap

Tunable electronic behaviors and emerging negative differential resistance effects of the broken-gap KAgSe/SiC2 van der Waals heterojunction.

scholarly journals New negative differential resistance device based on resonant interband tunneling

1989 ◽  
Vol 55 (11) ◽  
pp. 1094-1096 ◽  
Author(s):  
J. R. Söderström ◽  
D. H. Chow ◽  
T. C. McGill
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Interband Tunneling
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