Low temperature atomic layer deposition of zirconium oxide for inkjet printed transistor applications
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We report the growth of zirconium oxide (ZrO2) as a high-k gate dielectric for an inkjet-printed transistor using a low-temperature atomic layer deposition (ALD) from tetrakis(dimethylamido)zirconium (TDMAZr) and water precursors.
2017 ◽
Vol 35
(1)
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pp. 01A107
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2014 ◽
Vol 6
(6)
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pp. 3799-3804
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2019 ◽
Vol 45
(6)
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pp. 7407-7412
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2015 ◽
Vol 33
(4)
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pp. 041512
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