scholarly journals Electrically induced change in HfO2/1-monolayer TiO2/SiO2 metal-oxide-semiconductor stacks: capacitance-voltage and hard x-ray photoelectron spectroscopy studies

2021 ◽  
Author(s):  
Noriyuki Miyata ◽  
Kyoko Sumita ◽  
Akira Yasui ◽  
Ryousuke Sano ◽  
Reito Wada ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Photoelectron Spectroscopy ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
X Ray ◽  
Capacitance Voltage ◽  
Spectroscopy Studies

Angle Resolved XPS Analysis of Surface Region Defects in Rapid Thermal Annealed Antimony Implanted Silicon

1989 ◽  
Vol 163 ◽  
Author(s):  
S.N. Kumar ◽  
G. Chaussemy ◽  
A. Laugier ◽  
B. Canut ◽  
M. Charbonnier
Keyword(s):  
Photoelectron Spectroscopy ◽  
Oxygen Diffusion ◽  
Surface Region ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High Dose ◽  
Thermal Treatments ◽  
X Ray ◽  
Capacitance Voltage

AbstractAngle-resolved X-ray photoelectron spectroscopy characterization of the surface region of high-dose Sb+ ion implanted silicon, after rapid thermal treatments over various temperatures, is reported. The results obtained are compared with the Rutherford backscattering data and the capacitance-voltage measurements on the metal-oxide-semiconductor mesa structures built on them. Rapid anneal at 1100 °C of the 1.4×1016 Sb+/cm2 samples showed an anomalous deep oxygen diffusion inside the implanted region.

Comprehensive physical and electrical characterizations of NO nitrided SiO2/4H-SiC(1120) interfaces

2021 ◽  
Author(s):  
Takato Nakanuma ◽  
Yu Iwakata ◽  
Arisa Watanabe ◽  
Takuji Hosoi ◽  
Takuma Kobayashi ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Nitrogen Concentration ◽  
Depth Profiling ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Mos Capacitors ◽  
X Ray ◽  
Capacitance Voltage ◽  
Experimental Findings ◽  
Electrical Characterizations

Abstract Nitridation of SiO2/4H-SiC(1120) interfaces with post-oxidation annealing in an NO ambient (NO-POA) and its impact on the electrical properties were investigated. Sub-nm-resolution nitrogen depth profiling at the interfaces was conducted by using a scanning x-ray photoelectron spectroscopy microprobe. The results showed that nitrogen atoms were incorporated just at the interface and that interface nitridation proceeded much faster than at SiO2/SiC(0001) interfaces, resulting in a 2.3 times higher nitrogen concentration. Electrical characterizations of metal-oxide-semiconductor capacitors were conducted through capacitance-voltage (C–V) measurements in the dark and under illumination with ultraviolet light to evaluate the electrical defects near the conduction and valence band edges and those causing hysteresis and shifting of the C–V curves. While all of these defects were passivated with the progress of the interface nitridation, excessive nitridation resulted in degradation of the MOS capacitors. The optimal conditions for NO-POA are discussed on the basis of these experimental findings.

Shallow Traps at P-Doped SiO2/4H-SiC(0001) Interface

2011 ◽  
Vol 679-680 ◽  
pp. 338-341 ◽  
Author(s):  
Dai Okamoto ◽  
Hiroshi Yano ◽  
Shinya Kotake ◽  
Tomoaki Hatayama ◽  
Takashi Fuyuki
Keyword(s):  
Photoelectron Spectroscopy ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Traps ◽  
Channel Mobility ◽  
X Ray ◽  
Capacitance Voltage ◽  
Shallow Traps

We report on electrical and physical investigations aimed to clarify the mechanisms behind the high channel mobility of 4H-SiC metal–oxide–semiconductor field-effect transistors processed with POCl3 annealing. By low-temperature capacitance–voltage analysis, we found that the shallow interface traps are effectively removed by P incorporation. Using x-ray photoelectron spectroscopy, we found that the three-fold coordinated P atoms exist at the oxide/4H-SiC interface. The overall results suggest that P atoms directly remove the Si–Si bonds and thus eliminate the near-interface traps.

Interface chemistry and electrical characteristics of 4H-SiC/SiO2 after nitridation in varying atmospheres

2018 ◽  
Vol 6 (44) ◽  
pp. 12079-12085 ◽  
Author(s):  
Anna Regoutz ◽  
Gregor Pobegen ◽  
Thomas Aichinger
Keyword(s):  
High Temperature ◽  
Metal Oxide ◽  
High Power ◽  
Photoelectron Spectroscopy ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrical Characteristics ◽  
Interface Chemistry ◽  
X Ray ◽  
Immense Potential

SiC has immense potential as the semiconductor for future high power metal–oxide–semiconductor devices. X-ray photoelectron spectroscopy (XPS) to systematically study the 4H-SiC/SiO2 interface after high temperature nitridation treatments in a variety of atmospheres.

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