Thermal stability of the HfO2∕SiO2 interface for sub-0.1μm complementary metal-oxide-semiconductor gate oxide stacks: A valence band and quantitative core-level study by soft x-ray photoelectron spectroscopy
2009 ◽
Vol 48
(4)
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pp. 04C087
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1995 ◽
Vol 13
(6)
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pp. 2741
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2000 ◽
Vol 39
(Part 1, No. 4B)
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pp. 2167-2171
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2014 ◽
Vol 6
(9)
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pp. 1020-1023