Shear alignment and 2D charge transport of tilted smectic liquid crystalline phases – XRD and FET studies

2019 ◽  
Vol 7 (9) ◽  
pp. 2615-2624 ◽  
Author(s):  
Iris Wurzbach ◽  
Christian Rothe ◽  
Kirsten Bruchlos ◽  
Sabine Ludwigs ◽  
Frank Giesselmann
Keyword(s):  
Field Effect ◽  
Carrier Mobility ◽  
Liquid Crystalline ◽  
Field Effect Transistor ◽  
Charge Carrier Mobility ◽  
Shear Alignment ◽  
Smectic Phases ◽  
Liquid Crystalline Phases ◽  
Plane Anisotropy ◽  
Effect Transistor

In the tilted smectic phases of terthiophenes, shear alignment macroscopically aligns the tilt direction of the director leading to a substantial in-plane anisotropy of charge carrier mobility in organic field effect transistor (OFET) experiments.

Probing Molecular Packing at Engineered Interfaces in Organic Field Effect Transistor and Its Correlation with Charge Carrier Mobility

2015 ◽  
Vol 7 (19) ◽  
pp. 10169-10177 ◽  
Author(s):  
Priya Maheshwari ◽  
Saurabh Mukherjee ◽  
Debarati Bhattacharya ◽  
Shashwati Sen ◽  
Raj Bahadur Tokas ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Charge Carrier Mobility ◽  
Molecular Packing ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

Charge mobility in discotic liquid crystalline porphyrins and phthalocyanines measured by PR-TRMC

2003 ◽  
Vol 07 (05) ◽  
pp. 342-350 ◽  
Author(s):  
John M. Warman ◽  
Jessica E. Kroeze ◽  
Pieter G. Schouten ◽  
Anick M. van de Craats
Keyword(s):  
Conjugated Polymers ◽  
Carrier Mobility ◽  
Liquid Crystalline ◽  
Alkyl Chain ◽  
Charge Carrier Mobility ◽  
Chain Structure ◽  
Coupling Element ◽  
Time Resolved ◽  
Liquid Crystalline Phases ◽  
Conductive Properties

The pulse-radiolysis time-resolved microwave conductivity technique, “PR-TRMC”, has been used to determine the charge carrier mobility within columnar stacks of mesomorphic discotic porphyrins and phthalocyanines. The influences of temperature, morphology and variations in the primary molecular structure are demonstrated and discussed. Both the mesomorphic and conductive properties are shown to be dramatically influenced by subtle changes in the peripheral alkyl chain structure or the core-to-chain coupling element. Mobilities close to 1 cm2.V−1.s−1 are found in crystalline solids, and well in excess of 0.1 cm2.V−1.s−1 in columnar, liquid crystalline phases. These values which are even larger than those determined by PR-TRMC for conjugated polymers and similar to values found for electrons and holes in organic single crystals.

Patterning rubrene crystalline thin films for sub-micrometer channel length field-effect transistor arrays

2014 ◽  
Vol 2 (44) ◽  
pp. 9359-9363 ◽  
Author(s):  
Juan Zhu ◽  
Wenchong Wang ◽  
Qigang Zhong ◽  
Liqiang Li ◽  
Chuan Du ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Channel Length ◽  
Organic Films ◽  
Porous Structures ◽  
Patterned Growth ◽  
Effect Transistor ◽  
Magnitude Difference

The patterned growth of crystalline rubrene films directly on electrodes is demonstrated. In addition, organic films with close packed and porous structures are locally achieved by controlling the electrode spaces, resulting in a two orders of magnitude difference in carrier mobility.

Modeling the Carrier Mobility in Nanowire Channel FET

2007 ◽  
Vol 1017 ◽  
Author(s):  
Werner Prost ◽  
Kai Blekker ◽  
Quoc-Thai Do ◽  
Ingo Regolin ◽  
Sven Müller ◽  
...  
Keyword(s):  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Static Field ◽  
Device Model ◽  
Inas Nanowires ◽  
Effect Transistor ◽  
Long Channel

AbstractWe report on the extraction of carrier type, and mobility in semiconductor nanowires by adopting experimental nanowire field-effect transistor device data to a long channel MISFET device model. Numerous field-effect transistors were fabricated using n-InAs nanowires of a diameter of 50 nm as a channel. The I-V data of devices were analyzed at low to medium drain current in order to reduce the effect of extrinsic resistances. The gate capacitance is determined by an electro-static field simulation tool. The carrier mobility remains as the only parameter to fit experimental to modeled device data. The electron mobility in n-InAs nanowires is evaluated to µ = 13,000 cm2/Vs while for comparison n-ZnO nanowires exhibit a mobility of 800 cm2/Vs.

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