Structural and spectroscopy characterization of coaxial GaAs/GaAsSb/GaAs single quantum well nanowires fabricated by molecular beam epitaxy
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Through the growth and characterization of GaAs/GaAs0.75Sb0.25/GaAs SQW nanowires, an emission wavelength of about 1.2 μm is achieved.
2014 ◽
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pp. 035002
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2004 ◽
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