Gas adsorption and light interaction mechanism in phosphorene-based field-effect transistors

Phosphorene-based field effect transistors are fabricated and are shown to be highly sensitive gas and photodetectors. The sensing mechanism is explained using a Schottky barrier model at the phosphorene/metal contact interface.

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Transition from Schottky-barrier-determined to channel transport regime with low noise in carbon nanotube field effect transistors

10.1063/1.4848320 ◽

2013 ◽

Author(s):

V. A. Sydoruk ◽

M. V. Petrychuk ◽

A. Ural ◽

G. Bosman ◽

A. Offenhäusser ◽

...

Keyword(s):

Carbon Nanotube ◽

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors ◽

Low Noise ◽

Transport Regime ◽

Channel Transport

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Multiple Schottky Barrier-Limited Field-Effect Transistors on a Single Silicon Nanowire with an Intrinsic Doping Gradient

ACS Applied Materials & Interfaces ◽

10.1021/acsami.7b00144 ◽

2017 ◽

Vol 9 (13) ◽

pp. 12046-12053 ◽

Cited By ~ 6

Author(s):

Jorge L. Barreda ◽

Timothy D. Keiper ◽

Mei Zhang ◽

Peng Xiong

Keyword(s):

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire

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Improvement of subthreshold current transport by contact interface modification in p-type organic field-effect transistors

Applied Physics Letters ◽

10.1063/1.3115826 ◽

2009 ◽

Vol 94 (14) ◽

pp. 143304 ◽

Cited By ~ 130

Author(s):

Masataka Kano ◽

Takeo Minari ◽

Kazuhito Tsukagoshi

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Current Transport ◽

Organic Field Effect Transistors ◽

Contact Interface ◽

Interface Modification ◽

Subthreshold Current ◽

P Type

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Electrostatics of coaxial schottky-barrier nanotube field-effect transistors

IEEE Transactions on Nanotechnology ◽

10.1109/tnano.2003.817228 ◽

2003 ◽

Vol 2 (3) ◽

pp. 175-180 ◽

Cited By ~ 54

Author(s):

D.L. John ◽

L.C. Castro ◽

J. Clifford ◽

D.L. Pulfrey

Keyword(s):

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors

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Aptamer–field-effect transistors overcome Debye length limitations for small-molecule sensing

Science ◽

10.1126/science.aao6750 ◽

2018 ◽

Vol 362 (6412) ◽

pp. 319-324 ◽

Cited By ~ 142

Author(s):

Nako Nakatsuka ◽

Kyung-Ae Yang ◽

John M. Abendroth ◽

Kevin M. Cheung ◽

Xiaobin Xu ◽

...

Keyword(s):

Conformational Changes ◽

Field Effect ◽

Field Effect Transistors ◽

Debye Length ◽

Stem Loop ◽

Highly Sensitive ◽

Close Proximity ◽

Sphingosine 1 Phosphate ◽

Specific Receptors ◽

Highly Sensitive Detection

Detection of analytes by means of field-effect transistors bearing ligand-specific receptors is fundamentally limited by the shielding created by the electrical double layer (the “Debye length” limitation). We detected small molecules under physiological high–ionic strength conditions by modifying printed ultrathin metal-oxide field-effect transistor arrays with deoxyribonucleotide aptamers selected to bind their targets adaptively. Target-induced conformational changes of negatively charged aptamer phosphodiester backbones in close proximity to semiconductor channels gated conductance in physiological buffers, resulting in highly sensitive detection. Sensing of charged and electroneutral targets (serotonin, dopamine, glucose, and sphingosine-1-phosphate) was enabled by specifically isolated aptameric stem-loop receptors.

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