Improvement of subthreshold current transport by contact interface modification in p-type organic field-effect transistors

2009 ◽  
Vol 94 (14) ◽  
pp. 143304 ◽  
Author(s):  
Masataka Kano ◽  
Takeo Minari ◽  
Kazuhito Tsukagoshi
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Current Transport ◽  
Organic Field Effect Transistors ◽  
Contact Interface ◽  
Interface Modification ◽  
Subthreshold Current ◽  
P Type

scholarly journals 2,2'-(Arylenedivinylene)bis-8-hydroxyquinolines exhibiting aromatic π-π stacking interactions as solution-processable p-type organic semiconductors for high-performance organic field effect transistors

2021 ◽  
Author(s):  
Suman Yadav ◽  
Shivani Sharma ◽  
Satinder K Sharma ◽  
Chullikkattil P. Pradeep
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
Effect Transistor ◽  
Solution Processable ◽  
P Type

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...

Comparison of p-type and n-type organic field-effect transistors using nickel coordination compounds

2006 ◽  
Vol 421 (4-6) ◽  
pp. 395-398 ◽  
Author(s):  
Tomohiro Taguchi ◽  
Hiroshi Wada ◽  
Takuya Kambayashi ◽  
Bunpei Noda ◽  
Masanao Goto ◽  
...  
Keyword(s):  
Coordination Compounds ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
P Type

scholarly journals A Study on the Stability of Water-Gated Organic Field-Effect-Transistors Based on a Commercial p-Type Polymer

2019 ◽  
Vol 7 ◽  
Author(s):  
Rosaria Anna Picca ◽  
Kyriaki Manoli ◽  
Eleonora Macchia ◽  
Angelo Tricase ◽  
Cinzia Di Franco ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
The Stability ◽  
Stability Of Water ◽  
P Type

Modeling of Channel Formation in Organic Field Effect Transistors

2001 ◽  
Vol 708 ◽  
Author(s):  
T. Li ◽  
P. P. Ruden ◽  
I. H. Campbell ◽  
D. L. Smith
Keyword(s):  
Work Function ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Channel Formation ◽  
Metal Work Function ◽  
Induced Charge Density ◽  
P Type ◽  
Electrostatic Modeling ◽  
Contact Metal

ABSTRACTWe report results of two-dimensional electrostatic modeling for (top-contact) organic field effect transistors, focusing on the formation of the conductive channel. The effect on channel formation of the choice of the source and drain contact metal is investigated. High work function metal (e.g., gold) source and drain contacts produce a conducting p-type region near these contacts. In contrast, low work function metal source and drain contacts (e.g., magnesium) lead to depleted regions. In the center of the device, between the source and drain contacts, the channel carrier density at a fixed gate bias is determined by the work function of the gate contact material, and is essentially independent of the metal used to form the source and drain contacts. The dependence of the transistor threshold voltage on the gate contact metal work function and the device implications of the spatial variation of the induced charge density are discussed.

scholarly journals Syntheses of dibenzo[d,d']benzo[2,1-b:3,4-b']difuran derivatives and their application to organic field-effect transistors

2016 ◽  
Vol 12 ◽  
pp. 805-812 ◽  
Author(s):  
Minh Anh Truong ◽  
Koji Nakano
Keyword(s):  
Cyclic Voltammetry ◽  
Electrochemical Properties ◽  
Organic Semiconductors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Photoluminescence Spectroscopy ◽  
Organic Field Effect Transistors ◽  
Semiconducting Properties ◽  
P Type ◽  
Conjugated Compounds

Ladder-type π-conjugated compounds containing a benzo[2,1-b:3,4-b']difuran skeleton, such as dibenzo[d,d']benzo[2,1-b:3,4-b']difuran (syn-DBBDF) and dinaphtho[2,3-d:2',3'-d']benzo[2,1-b:3,4-b']difuran (syn-DNBDF) were synthesized. Their photophysical and electrochemical properties were revealed by UV–vis absorption and photoluminescence spectroscopy and cyclic voltammetry. Organic field-effect transistors (OFETs) were fabricated with these compounds as organic semiconductors, and their semiconducting properties were evaluated. OFETs with syn-DBBDF and syn-DNBDF showed typical p-type characteristics with hole mobilities of <1.5 × 10−3 cm2·V−1·s−1 and <1.0 × 10−1 cm2·V−1·s−1, respectively.

scholarly journals Tuning Contact Resistance in Top‐Contact p ‐Type and n ‐Type Organic Field Effect Transistors by Self‐Generated Interlayers

2019 ◽  
Vol 30 (18) ◽  
pp. 1805617 ◽  
Author(s):  
Tanmoy Sarkar ◽  
Basel Shamieh ◽  
Roy Verbeek ◽  
Auke Jisk Kronemeijer ◽  
Gerwin H. Gelinck ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Top Contact ◽  
P Type
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