Gas phase synthesis of amorphous silicon nitride nanoparticles for high-energy LIBs

2020 ◽  
Vol 13 (4) ◽  
pp. 1212-1221 ◽  
Author(s):  
Sujong Chae ◽  
Seungkyu Park ◽  
Kihong Ahn ◽  
Gyutae Nam ◽  
Taeyong Lee ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Gas Phase ◽  
High Energy ◽  
Phase Synthesis ◽  
Amorphous Silicon Nitride ◽  
Gas Phase Synthesis ◽  
Vertical Furnace ◽  
Si Anodes ◽  
Phase Design

We introduce a highly homogenous phase design of Si with N by scalable gas phase synthesis using a specially customized vertical furnace, which tackles the intrinsic challenges of Si anodes.

scholarly journals Nanoscale density variations induced by high energy heavy ions in amorphous silicon nitride and silicon dioxide

2018 ◽  
Vol 29 (14) ◽  
pp. 144004 ◽  
Author(s):  
P Mota-Santiago ◽  
H Vazquez ◽  
T Bierschenk ◽  
F Kremer ◽  
A Nadzri ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Amorphous Silicon ◽  
Heavy Ions ◽  
High Energy ◽  
Amorphous Silicon Nitride

Growth of aligned wurtzite GaN nanorods on Si(111): Role of Silicon nitride intermediate layer

2012 ◽  
Vol 1411 ◽  
Author(s):  
Praveen Kumar ◽  
Malleswararao Tangi ◽  
Satish Shetty ◽  
Manoj Kesaria ◽  
S. M. Shivaprasad
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Photoelectron Spectroscopy ◽  
High Energy ◽  
Ex Situ ◽  
Rf Plasma ◽  
High Quality ◽  
Amorphous Silicon Nitride ◽  
Nanorod Growth

ABSTRACT:We present here a report on a role of initial nitridation of Si(111) surface on GaN nanorod growth. High quality wurtzite GaN nanorods are grown by Molecular Beam Epitaxy on bare Si(111)-7x7, crystalline and amorphous silicon nitride at 750oC, under nitrogen rich conditions. Using in-situ reflection high energy electron diffraction and ex-situ X-ray photoelectron spectroscopy, field emission scanning electron microscopy and photoluminescence, the structural and chemical properties are monitored. In the first part of the study, we have optimized the conditions of the N2* RF plasma, for formation of crystalline and amorphous silicon nitride on Si(111)-7x7 surface. While in the second part, GaN nanorods are grown on clean and these modified Si(111) substrates. Anisotropic spots are observed by RHEED for GaN grown on clean Si and on the amorphous silicon nitride, while circular, sharp and intense RHEED spots have been observed for GaN grown on crystalline Si3N4. FESEM results show nanorod growth in all the three different conditions. However, GaN nanorods grown on crystalline Si3N4 surface are observed to be self aligned and oriented along <0001> direction, while those grown on amorphous silicon nitride and bare Si(111) surfaces show great disorder increasing, respectively. Overall, the results clearly demonstrate that high quality of dense and self aligned c-oriented GaN nanorods can be formed on Si(111) surface by modifying it by appropriate nitridation.

scholarly journals Hydrogen effects on the thermal conductivity of delocalized vibrational modes in amorphous silicon nitride (a−SiNx:H)

2021 ◽  
Vol 5 (3) ◽  
Author(s):  
Jeffrey L. Braun ◽  
Sean W. King ◽  
Eric R. Hoglund ◽  
Mehrdad Abbasi Gharacheh ◽  
Ethan A. Scott ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Vibrational Modes ◽  
Amorphous Silicon Nitride

scholarly journals Effect of Thermal Annealing on the Photoluminescence of Dense Si Nanodots Embedded in Amorphous Silicon Nitride Films

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 354
Author(s):  
Qianqian Liu ◽  
Xiaoxuan Chen ◽  
Hongliang Li ◽  
Yanqing Guo ◽  
Jie Song ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Chemical Vapor ◽  
Peak Position ◽  
Excitation Wavelength ◽  
Very High Frequency ◽  
Amorphous Silicon Nitride ◽  
Silicon Nitride Films ◽  
High Frequency Plasma

Luminescent amorphous silicon nitride-containing dense Si nanodots were prepared by using very-high-frequency plasma-enhanced chemical vapor deposition at 250 °C. The influence of thermal annealing on photoluminescence (PL) was studied. Compared with the pristine film, thermal annealing at 1000 °C gave rise to a significant enhancement by more than twofold in terms of PL intensity. The PL featured a nanosecond recombination dynamic. The PL peak position was independent of the excitation wavelength and measured temperatures. By combining the Raman spectra and infrared absorption spectra analyses, the enhanced PL was suggested to be from the increased density of radiative centers related to the Si dangling bonds (K0) and N4+ or N20 as a result of bonding configuration reconstruction.

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