Transition from nonvolatile bipolar memory switching to bidirectional threshold switching in layered MoO3 nanobelts

Abstract In this work, the dependence of negative differential resistance (NDR) on compliance current (Icc) was investigated based on Ag/HfOx/Pt resistive memory device. Tunable conversion from bidirectional threshold switching (TS) to memory switching (MS) were achieved through enhancing Icc. NDR can be observed in TS as Icc is below 800μA but vanishes in MS. The switching voltages and readout windows of TS evolve with Icc. Furthermore, the dynamic conductance (dI/dV) as a function of time in NDR can be well illustrated by capacitor-like relaxation equation, and the relaxation time constant is significantly dependent on Icc. These phenomena were elucidated from viewpoint of nanofilament evolution controlled by Icc as well as nanocapacitor effects originated from nanofilament gap. The Icc-dependent NDR as well as conversion between TS and MS on Ag/HfOx/Pt resistive memory device indicates its potential application as a multifunctional electronic device.

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Microscopic origin of transition from threshold switching to memory switching in oxide-electrolyte-based RRAM

2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) ◽

10.1109/icsict.2014.7021267 ◽

2014 ◽

Author(s):

Haitao Sun ◽

Qi Liu ◽

Shibing Long ◽

Hangbing Lv ◽

Ming Liu

Keyword(s):

Memory Switching ◽

Threshold Switching ◽

Microscopic Origin ◽

Oxide Electrolyte

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Room temperature fabricated NbOx/Nb2O5 memory switching device with threshold switching effect

2013 5th IEEE International Memory Workshop ◽

10.1109/imw.2013.6582127 ◽

2013 ◽

Cited By ~ 6

Author(s):

Hannes Mahne ◽

Helge Wylezich ◽

Stefan Slesazeck ◽

Thomas Mikolajick ◽

Jozef Vesely ◽

...

Keyword(s):

Room Temperature ◽

Switching Effect ◽

Switching Device ◽

Memory Switching ◽

Threshold Switching

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Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology

Advanced Functional Materials ◽

10.1002/adfm.201401304 ◽

2014 ◽

Vol 24 (36) ◽

pp. 5679-5686 ◽

Cited By ~ 166

Author(s):

Haitao Sun ◽

Qi Liu ◽

Congfei Li ◽

Shibing Long ◽

Hangbing Lv ◽

...

Keyword(s):

Direct Observation ◽

Conductive Filament ◽

Memory Switching ◽

Threshold Switching

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Electrochromic and bipolar memory switching properties of novel Eu(III)-polymer of multidentate Schiff’s base ligand

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-020-04554-6 ◽

2020 ◽

Vol 31 (22) ◽

pp. 20345-20359

Author(s):

Deepa Oberoi ◽

Uday Shankar ◽

Parveen Dagar ◽

Satyajit Sahu ◽

Anasuya Bandyopadhyay

Keyword(s):

Schiff’S Base ◽

Memory Switching ◽

Bipolar Memory

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Memory Switching and Threshold Switching in a 3D Nanoscaled NbOX System

IEEE Electron Device Letters ◽

10.1109/led.2019.2904279 ◽

2019 ◽

Vol 40 (5) ◽

pp. 718-721 ◽

Cited By ~ 6

Author(s):

Qing Luo ◽

Xumeng Zhang ◽

Jie Yu ◽

Wei Wang ◽

Tiancheng Gong ◽

...

Keyword(s):

Memory Switching ◽

Threshold Switching

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Electroforming, Switching and Memory Effects in Oxide Thin Films

ElectroComponent Science and Technology ◽

10.1155/apec.3.217 ◽

1977 ◽

Vol 3 (4) ◽

pp. 217-224 ◽

Cited By ~ 55

Author(s):

D. P. Oxley

Keyword(s):

Thin Film ◽

Thin Films ◽

Metal Oxide ◽

Chalcogenide Glasses ◽

Sandwich Structures ◽

Negative Resistance ◽

Memory Effects ◽

Memory Devices ◽

Memory Switching ◽

Threshold Switching

Experiments on electroforming of Metal-Oxide-Metal thin film sandwiches which have been electroformed to exhibit voltage-controlled negative resistance are summarized and an outline of recent evidence in favour of localized or filamentary conduction is given.A similar review is given of the experiments on oxide sandwich structures which have been formed to exhibit current-controlled negative resistance or threshold switching and memory switching. Current theories are reviewed briefly. Finally oxide memory devices are compared with those based upon the chalcogenide glasses.

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Demonstration of Threshold Switching and Bipolar Resistive Switching in Ag/SnOx/TiN Memory Device

Metals ◽

10.3390/met11101605 ◽

2021 ◽

Vol 11 (10) ◽

pp. 1605

Author(s):

Jooyoung Pyo ◽

Seungjin Woo ◽

Kisong Lee ◽

Sungjun Kim

Keyword(s):

Resistive Switching ◽

Photoelectron Spectroscopy ◽

Pulse Amplitude ◽

Memory Device ◽

Gradual Transition ◽

Bipolar Resistive Switching ◽

Memory Switching ◽

Threshold Switching ◽

Non Volatile Memory ◽

Multiple Pulses

In this work, we observed the duality of threshold switching and non-volatile memory switching of Ag/SnOx/TiN memory devices by controlling the compliance current (CC) or pulse amplitude. The insulator thickness and chemical analysis of the device stack were confirmed by transmission electron microscope (TEM) images of the Ag/SnOx/TiN stack and X-ray photoelectron spectroscopy (XPS) of the SnOx film. The threshold switching was achieved at low CC (50 μA), showing volatile resistive switching. Optimal CC (5 mA) for bipolar resistive switching conditions with a gradual transition was also found. An unstable low-resistance state (LRS) and negative-set behavior were observed at CCs of 1 mA and 30 mA, respectively. We also demonstrated the pulse operation for volatile switching, set, reset processes, and negative-set behaviors by controlling pulse amplitude and polarity. Finally, the potentiation and depression characteristics were mimicked by multiple pulses, and MNIST pattern recognition was calculated using a neural network, including the conductance update for a hardware-based neuromorphic system.

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Convertible resistive switching characteristics between memory switching and threshold switching in a single ferritin-based memristor

Chemical Communications ◽

10.1039/c6cc00989a ◽

2016 ◽

Vol 52 (26) ◽

pp. 4828-4831 ◽

Cited By ~ 29

Author(s):

Chaochao Zhang ◽

Jie Shang ◽

Wuhong Xue ◽

Hongwei Tan ◽

Liang Pan ◽

...

Keyword(s):

Resistive Switching ◽

Resistance Switching ◽

Promising Candidate ◽

Memory Switching ◽

Threshold Switching ◽

Switching Characteristics

The coexistence and inter-conversion between threshold and memory resistance switching in a ferritin memristor makes it a promising candidate for physiological applications.

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