scholarly journals Electroforming, Switching and Memory Effects in Oxide Thin Films

1977 ◽  
Vol 3 (4) ◽  
pp. 217-224 ◽  
Author(s):  
D. P. Oxley
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Metal Oxide ◽  
Chalcogenide Glasses ◽  
Sandwich Structures ◽  
Negative Resistance ◽  
Memory Effects ◽  
Memory Devices ◽  
Memory Switching ◽  
Threshold Switching

Experiments on electroforming of Metal-Oxide-Metal thin film sandwiches which have been electroformed to exhibit voltage-controlled negative resistance are summarized and an outline of recent evidence in favour of localized or filamentary conduction is given.A similar review is given of the experiments on oxide sandwich structures which have been formed to exhibit current-controlled negative resistance or threshold switching and memory switching. Current theories are reviewed briefly. Finally oxide memory devices are compared with those based upon the chalcogenide glasses.

scholarly journals Binary Metal Oxides Thin Films Prepared from Pulsed Laser Deposition

2021 ◽  
Author(s):  
Cyril Robinson Azariah John Chelliah ◽  
Rajesh Swaminathan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Metal Oxide ◽  
Metal Oxides ◽  
Pulsed Laser ◽  
Primary Objective ◽  
Binary Oxides ◽  
Binary Metal ◽  
Metal Oxide Nanostructures ◽  
Binary Metal Oxide

The semiconductor industry flourished from a simple Si-based metal oxide semiconductor field effect transistor to an era of MOSFET-based smart materials. In recent decades, researchers have been replacing all the materials required for the MOSFET device. They replaced the substrate with durable materials, lightweight materials, translucent materials and so on. They have came up with the possibility of replacing dielectric silicon dioxide material with high-grade dielectric materials. Even then the channel shift in the MOSFET was the new trend in MOSFET science. From the bulk to the atomic level, transistors have been curiously researched across the globe for the use of electronic devices. This research was also inspired by the different semiconductor materials relevant to the replacement of the dielectric channel/gate. Study focuses on diverse materials such as zinc oxides (ZnO), electrochromic oxides such as molybdenum oxides (including MoO3 and MoO2) and other binary oxides using ZnO and MoO3. The primary objective of this research is to study pulsed laser deposited thin films such as ZnO, MoO3, binary oxides such as binary ZnO /MoO3, ZnO /TiO2 and ZnO/V2O5 and to analyse their IV properties for FET applications. To achieve the goal, the following working elements have been set: investigation of pulsed laser deposited thin film of metal oxides and thin film of binary metal oxide nanostructures with effects of laser repetition and deposition temperatures.

Bipolar Switching Properties of the Manganese Oxide Thin Film RRAM Devices

2014 ◽  
Vol 602-603 ◽  
pp. 1056-1059 ◽  
Author(s):  
Min Chang Kuan ◽  
Fann Wei Yang ◽  
Chien Min Cheng ◽  
Kai Huang Chen ◽  
Jian Tz Lee
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Manganese Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Resistance Random Access Memory ◽  
Non Volatile Memory ◽  
Volatile Memory

Up to now, the various non-volatile memory devices such as, ferroelectric random access memory (FeRAM), magnetron random access memory (MRAM), and resistance random access memory (RRAM) were widely discussed and investigated. For these nonvolatile memory devices, the resistance random access memory (RRAM) devices will play an important role because of its non-destructive readout, low operation voltage, high operation speed, long retention time, and simple structure. The resistance random access memory (RRAM) devices were only consisting of one resistor and one corresponding transistor. The subject of this work was to study the characteristics of manganese oxide (MnO) thin films deposited on transparent conductive thin film using the rf magnetron sputtering method. The optimal sputtering conditions of as-deposited manganese oxide (MnO) thin films were the rf power of 80 W, chamber pressure of 20 mTorr, substrate temperature of 580°C, and an oxygen concentration of 40%. The basic mechanisms for the bistable resistance switching were observed. In which, the non-volatile memory and switching properties of the manganese oxide (MnO) thin film structures were reported and the relationship between the memory windows and electrical properties was investigated.

Low-Temperature, Nontoxic Water-Induced Metal-Oxide Thin Films and Their Application in Thin-Film Transistors

2015 ◽  
Vol 25 (17) ◽  
pp. 2564-2572 ◽  
Author(s):  
Guoxia Liu ◽  
Ao Liu ◽  
Huihui Zhu ◽  
Byoungchul Shin ◽  
Elvira Fortunato ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Films ◽  
Metal Oxide Thin Films

scholarly journals Study of Self-Patterned Zinc Tin Oxide Thin-Film Transistors Prepared from Photocurable Precursor Solution with Photoacid Generator

2021 ◽  
Vol 59 (3) ◽  
pp. 162-167
Author(s):  
Jae Young Kim ◽  
Geonoh Choe ◽  
Tae Kyu An ◽  
Yong Jin Jeong
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Metal Oxide ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Precursor Solution ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Zinc Tin Oxide ◽  
Photoacid Generator

Solution-processed zinc tin oxide (ZTO) thin-film transistors (TFTs) have great potential uses in next-generation wearable and flexible electronic products. Zinc and tin precursor materials are naturally abundant and have low fabrication costs. To integrate a single ZTO TFT into logic circuits including inverters, NAND, and NOR gates will require the development of a facile patterning process to replace conventional and complicated photolithography techniques which are usually time-consuming and toxic. In this study, self-patterned ZTO thin films were prepared using a photo-patternable precursor solution including a photoacid generator, (4-methylthiophenyl)methyl phenyl sulfonium triflate. Solution-processed ZTO precursor films fabricated with the photoacid generator were successfully micropatterned by UV exposure, and transitioned to a semiconducting ZTO thin film by heat treatment. The UV-irradiated precursor films became insoluble in developing solvent as the generated proton from the photoacid generator affected the metal-containing ligand and changed the solubility of the metal oxide precursors. The resulting ZTO thin films were utilized as the active layers of n-type TFTs, which exhibited a typical n-type transfer, and output characteristics with appropriate threshold voltage, on/off current ratio, and field-effect mobility. We believe that our work provides a convenient solution-based route to the fabrication of metal-oxide semiconductor patterns.

Gas-Sensing Property Evaluation of Reactively Sputtered Chromium Oxide Thin Films

2008 ◽  
Vol 55-57 ◽  
pp. 285-288 ◽  
Author(s):  
C. Oros ◽  
Anurat Wisitsoraat ◽  
Pichet Limsuwan ◽  
M. Horpathum ◽  
V. Patthanasettakul ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Metal Oxide ◽  
Chromium Oxide ◽  
Flow Rate ◽  
Gas Sensing ◽  
Oxygen Flow Rate ◽  
Oxide Thin Film ◽  
Oxide Thin Films ◽  
Sensing Applications

Metal oxide thin film materials, including SnO2, TiO2, WO3, MoO3, ZnO, have been widely studied for gas sensing applications. However, new gas-sensing materials with distinct and diverse characteristics for new sensing applications such as electronic nose are still being explored. Presently, gas sensing properties of other metal oxides have not yet been extensively explored. Chromium oxide is an interesting metal oxide for gas sensor because of its temperature stability and moderate electrical conductivity. Nevertheless, there have been very few studies on gas sensing behaviors of this material. In this work, chromium oxide thin films were systematically studied by reactive sputtering with varying sputtering parameter including oxygen flow rate. Structural characterization by means of scanning electron microscopy and X-ray diffraction reveals that the films have sub-micometer grain-size with Rhombohedral phase of Cr2O3. Gas-sensing performances of sputtered chromium oxide thin film have been characterized toward ethanol and acetylene sensing. It was found that chromium oxide thin films exhibit p-type conductivity with increased resistance when exposed to ethanol and acetylene, which are reducing gases. In addition, sensitivity to both acetylene and ethanol tend to improve as oxygen flow rate increases. Furthermore, the chromium oxide thin films exhibit high sensitivity at moderate temperature of 250-300 °C with minimum operating temperature of 200 °C.

Switching Behavior of Titania-Zinc Oxide Composites Thin Films

2015 ◽  
Vol 749 ◽  
pp. 308-312 ◽  
Author(s):  
Shafaq Mardhiyana Mohamat Kasim ◽  
Nor Azira Akma Shaari ◽  
Raudah Abu Bakar ◽  
Sukreen Hana Herman
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Titanium Dioxide ◽  
Metal Oxide ◽  
Indium Tin Oxide ◽  
Sol Gel ◽  
Single Layer ◽  
Switching Behavior ◽  
Oxide Thin Film

Single layer of titanium dioxide (TiO2) is common metal oxide in fabricating memristor device. In this study, two types of memristor with composite metal oxide thin films will be demonstrated. The two types of memristor are titanium dioxide (TiO2) thin film coated on zinc oxide (ZnO) thin film and ZnO coated on TiO2 thin film. Sol-gel spin coating method was to coat metal oxide thin film and sputtering method for depositing the metal contact. Platinum (Pt) was selected as the top electrode and indium tin oxide (ITO) as the bottom electrode. The electrical characteristics were defined by performing I-V measurement using two point probe equipment. I-V characteristics showed shape of pinched hysteresis loop for both samples. Sample with TiO2 coated on ZnO has slightly higher Roff/Ron ratio than sample ZnO coated on TiO2 which means it more memristive than another one. The cross-section of sample with TiO2 coated on ZnO had been performed as well by using Field-Emission Scanning Electron Microscopy (FESEM).

scholarly journals 2D and 3D Analyses of Metal Oxide Thin Films Examined by Atomic Force Microscope

2015 ◽  
Vol 773-774 ◽  
pp. 716-719
Author(s):  
Mokhter Faezahana ◽  
Nayan Nafarizal ◽  
Jia Wei Low ◽  
Che Ani Norhidayah ◽  
Mohd Zainizan Sahdan ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Metal Oxide ◽  
Three Dimensional ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Oxide Thin Films ◽  
Metal Oxide Thin Films ◽  
Atomic Force ◽  
Measured Sample

Atomic force microscope (AFM) is a useful tool to capture the two- and three-dimensional image of height and size of nanostructured thin film. It operate by measuring the forces between a sharp tip and surface of the measured sample. In addition, AFM is equipped with powerful software for image processing to interpret experimental results in detail. For example, by using the height and scanning length parameters of measured sample, average roughness and root mean square roughness can be evaluated. In the present works, the effect of image flattening process toward the surface roughness and surface fluctuations of metal oxide thin films will be presented. Set of samples were prepared by magnetron sputtering deposition and sol-gel coating techniques. In gas sensor industries using metal oxide thin film, surface roughness of metal oxide thin films are very important in order to improve the sensitivity and respond time of gas sensor. Therefore, optimization of thin film deposition and characterization are very important. The correlation between the three-dimensional image and thin film deposition and image processing parameters will also be presented.

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