scholarly journals Negative Differential Resistance in Bidirectional Threshold Switching of Ag/HfOx/Pt Device

2020 ◽  
Author(s):  
zhiguo jiang ◽  
Dongliang Wang ◽  
Yan Li ◽  
Yong Zhang ◽  
Xinman Chen
Keyword(s):  
Negative Differential Resistance ◽  
Electronic Device ◽  
Differential Resistance ◽  
Memory Device ◽  
Resistive Memory ◽  
Relaxation Equation ◽  
Relaxation Time Constant ◽  
Memory Switching ◽  
Threshold Switching ◽  
Dynamic Conductance

Abstract In this work, the dependence of negative differential resistance (NDR) on compliance current (Icc) was investigated based on Ag/HfOx/Pt resistive memory device. Tunable conversion from bidirectional threshold switching (TS) to memory switching (MS) were achieved through enhancing Icc. NDR can be observed in TS as Icc is below 800μA but vanishes in MS. The switching voltages and readout windows of TS evolve with Icc. Furthermore, the dynamic conductance (dI/dV) as a function of time in NDR can be well illustrated by capacitor-like relaxation equation, and the relaxation time constant is significantly dependent on Icc. These phenomena were elucidated from viewpoint of nanofilament evolution controlled by Icc as well as nanocapacitor effects originated from nanofilament gap. The Icc-dependent NDR as well as conversion between TS and MS on Ag/HfOx/Pt resistive memory device indicates its potential application as a multifunctional electronic device.

Compositional Tuning of Negative Differential Resistance in Bulk Silver Iodide Memristor

2020 ◽  
Author(s):  
SMITA GAJANAN NAIK ◽  
Mohammad Hussain Kasim Rabinal
Keyword(s):  
Power Consumption ◽  
Negative Differential Resistance ◽  
Silver Iodide ◽  
Differential Resistance ◽  
Fast Response ◽  
Low Power Consumption ◽  
Switching Effect ◽  
Memory Switching ◽  
Bulk Silver ◽  
Emerging Memory

Electrical memory switching effect has received a great interest to develop emerging memory technology such as memristors. The high density, fast response, multi-bit storage and low power consumption are their...

Negative Differential Resistance Characteristics of Silicon Nanocrystal Memory

2000 ◽  
Vol 609 ◽  
Author(s):  
Seung Jae Baik ◽  
Koeng Su Lim
Keyword(s):  
Quantum Dot ◽  
Negative Differential Resistance ◽  
Chemical Vapor ◽  
Differential Resistance ◽  
Memory Device ◽  
Oxide Semiconductor ◽  
Si Quantum Dot ◽  
Charge Tunneling ◽  
Nanocrystal Memory ◽  
Average Size

ABSTRACTTwo-dimensional (2D) Si quantum dot array was fabricated by oxidation of microcrystalline Si film deposited by photo chemical vapor deposition (photo-CVD). Average size of Si quantum dot was estimated to be 2.4nm and dot density 7 ∼ 8 ×1011 cm−2. Nanocrystal memory device with this 2D quantum dot array demonstrated negative differential resistance characteristics and single charge tunneling phenomena, which was observed as stepwise decrease of gate transconductance. Interface states at the oxidized surface of quantum dots were assumed to explain temperature dependence characteristics. This new process is adequate for functional device application of nanocrystal metal-oxide-semiconductor (MOS) memory.

A resistive switching memory device with a negative differential resistance at room temperature

2018 ◽  
Vol 113 (5) ◽  
pp. 053502 ◽  
Author(s):  
Mayameen S. Kadhim ◽  
Feng Yang ◽  
Bai Sun ◽  
Yushu Wang ◽  
Tao Guo ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Negative Differential Resistance ◽  
Room Temperature ◽  
Differential Resistance ◽  
Memory Device ◽  
Resistive Switching Memory ◽  
Switching Memory

scholarly journals Demonstration of Threshold Switching and Bipolar Resistive Switching in Ag/SnOx/TiN Memory Device

Metals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1605
Author(s):  
Jooyoung Pyo ◽  
Seungjin Woo ◽  
Kisong Lee ◽  
Sungjun Kim
Keyword(s):  
Resistive Switching ◽  
Photoelectron Spectroscopy ◽  
Pulse Amplitude ◽  
Memory Device ◽  
Gradual Transition ◽  
Bipolar Resistive Switching ◽  
Memory Switching ◽  
Threshold Switching ◽  
Non Volatile Memory ◽  
Multiple Pulses

In this work, we observed the duality of threshold switching and non-volatile memory switching of Ag/SnOx/TiN memory devices by controlling the compliance current (CC) or pulse amplitude. The insulator thickness and chemical analysis of the device stack were confirmed by transmission electron microscope (TEM) images of the Ag/SnOx/TiN stack and X-ray photoelectron spectroscopy (XPS) of the SnOx film. The threshold switching was achieved at low CC (50 μA), showing volatile resistive switching. Optimal CC (5 mA) for bipolar resistive switching conditions with a gradual transition was also found. An unstable low-resistance state (LRS) and negative-set behavior were observed at CCs of 1 mA and 30 mA, respectively. We also demonstrated the pulse operation for volatile switching, set, reset processes, and negative-set behaviors by controlling pulse amplitude and polarity. Finally, the potentiation and depression characteristics were mimicked by multiple pulses, and MNIST pattern recognition was calculated using a neural network, including the conductance update for a hardware-based neuromorphic system.

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