Quantitative measurement of charge accumulation along a quasi-one-dimensional W5O14 nanowire during electron field emission

Electric field map and equipotential contour lines of a quasi-one-dimensional W5O14 nanowire under an electrical bias of 150 V. Experimental cumulative charge profiles along the length of the nanowire are consistent with theoretical simulations.

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Optical and Electron Emission Properties of h-BN Films Codoped with Mg and O Atoms

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.566.175 ◽

2013 ◽

Vol 566 ◽

pp. 175-178

Author(s):

Shinji Ohtani ◽

Kenkichiro Kobayashi

Keyword(s):

Electric Field ◽

Field Emission ◽

Electron Emission ◽

Electron Field Emission ◽

Emission Properties ◽

Electron Field ◽

Quartz Substrates ◽

Lower Electric Field

Films of hexagonal BN (h-BN) codoped with Mg and O atoms were grown on n-type Si and quartz substrates heated at 500 °C by sputtering targets consisting of h-BN and MgO powders. An absorption is seen at a wavelength < 400 nm for h-BN films prepared in an Ar atmosphere. In contrast, films prepared from the target containing 0.25 mol% MgO in an atmosphere of Ar + 1% O2 shows an absorption at a wavelength < 260 nm and an electron field emission at a lower electric field of 3.6 V/μm.

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Electron Field Emission from Nano-Diamond Films

MRS Proceedings ◽

10.1557/proc-704-w3.3.1 ◽

2001 ◽

Vol 704 ◽

Author(s):

S.G. Wang ◽

Q. Zhang ◽

S.F. Yoon ◽

J. Ahn ◽

Q. Wang ◽

...

Keyword(s):

Grain Size ◽

Electric Field ◽

Field Emission ◽

Current Density ◽

Diamond Films ◽

Emission Current Density ◽

Hydrogen Gas ◽

Emission Current ◽

Electron Field Emission ◽

Electron Field

AbstractIn this paper, the field emission properties of nano-diamond films were investigated by measuring the curves of emission current density (J) versus applied electric field (E). The nano-diamond films were prepared on n-type (100) silicon substrate by microwave plasma enhanced chemical vapor deposition (MPECVD) technique using a gas mixture of nitrogen-methane-hydrogen. Field emission results show that, with increasing hydrogen gas flow ratio of [H2]/[N2+CH4+H2] from 0 to 10 %, diamond grain size increases from 5 to 60 nm, threshold electric field for electron field emission increases from 1.2 to 5.75 V/μm, and emission current density decreases from 820 to 560 μA/cm2, demonstrating that small grain size nano-diamond films are promising as a cathode material for low-field electron emitters.

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Electron Field Emission from Self-Organized Micro-Emitters of sp3-Bonded 5H Boron Nitride with Very High Current Density at Low Electric Field

The Journal of Physical Chemistry B ◽

10.1021/jp0493475 ◽

2004 ◽

Vol 108 (17) ◽

pp. 5182-5184 ◽

Cited By ~ 20

Author(s):

Shojiro Komatsu ◽

Akio Okudo ◽

Daisuke Kazami ◽

Dmitri Golberg ◽

Yubao Li ◽

...

Keyword(s):

Boron Nitride ◽

Electric Field ◽

Field Emission ◽

Current Density ◽

High Current Density ◽

Electron Field Emission ◽

High Current ◽

Self Organized ◽

Electron Field ◽

Very High

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One-dimensional germanium nanostructures—formation and their electron field emission properties

Nanotechnology ◽

10.1088/0957-4484/21/45/455601 ◽

2010 ◽

Vol 21 (45) ◽

pp. 455601 ◽

Cited By ~ 10

Author(s):

Hung-Chi Wu ◽

Te-Chien Hou ◽

Yu-Lun Chueh ◽

Lih-Juann Chen ◽

Hsin-Tien Chiu ◽

...

Keyword(s):

Field Emission ◽

Electron Field Emission ◽

One Dimensional ◽

Emission Properties ◽

Field Emission Properties ◽

Electron Field ◽

Electron Field Emission Properties

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Large and Stable Field-Emission Current from Heavily Si-Doped AlN Grown by MOVPE

MRS Proceedings ◽

10.1557/proc-621-r5.12.1 ◽

2000 ◽

Vol 621 ◽

Cited By ~ 1

Author(s):

Makoto Kasu ◽

Naoki Kobayashi

Keyword(s):

Electric Field ◽

Field Emission ◽

Light Emission ◽

Electron Field Emission ◽

Maximum Current Density ◽

Field Emission Current ◽

Maximum Current ◽

Electron Field ◽

Si Doped ◽

Stable Field

ABSTRACTWe investigated electron field emission (FE) from heavily Si-doped AlN grown by metalorganic vapor phase epitaxy. We found that, as the Si-dopant density increases, the threshold electric field decreases, which indicates that electrons are supplied to the surface effectively as a result of Si doping. We show that heavily Si-doped AlN has a maximum FE current of 347 μA (the maximum current density of 11 mA/cm2), stable FE current (fluctuation: 3%), and a threshold electric field of 34 V/μm. We observed visible light emission (luminance: about 1200 cd/m2) from phosphors excited by the field-emitted electrons.

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