AbstractThe kinetics of the TiSi2 C49 to C54 phase transformation in thin films on patterned deepsub- micron lines, were studied to obtain the full time, temperature and linewidth dependence of the fraction transformed during rapid thermal annealing. A Johnson-Mehl-Avrami kinetic analysis was performed, obtaining Avrami exponents of 0.8±0.2 for all sub-micron lines and 1. 9±0.2 for a 40 μm side square structure, indicating heterogeneous nucleation followed by one dimensional growth for the narrow lines, and two dimensional growth for the square structure. The activation energy, of 3.9 eV, was independent of linewidth in the sub-micron range. Transformation times increased dramatically for decreasing linewidth, as the linewidth approached the grain size of the starting C49 phase. A kinetic model based on the density of nucleation sites as a function of linewidth and C49 grain size is proposed and shown to fit the data, for samples with two different C49 grain sizes.
Switching adsorption and growth behavior of ultrathin [C2C1Im][OTf] films on Au(111) by Pd deposition
