scholarly journals Ni-mediated reactions in nanocrystalline diamond on Si substrates: the role of the oxide barrier

RSC Advances ◽  
2020 ◽  
Vol 10 (14) ◽  
pp. 8224-8232
Author(s):  
Semir Tulić ◽  
Thomas Waitz ◽  
Oleksandr Romanyuk ◽  
Marián Varga ◽  
Mária Čaplovičová ◽  
...  
Keyword(s):  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Nanocrystalline Diamond ◽  
Native Oxide ◽  
Si Substrates ◽  
Transmission Electron ◽  
Oxide Substrates ◽  
Oxide Barrier ◽  
Silicon Interface

Nanocrystalline diamond films grown on Si/native oxide substrates were subjected to Ni-mediated graphitization. Transmission electron microscopy study revealed crystals of NiSi2 and SiC across the carbon/silicon interface in addition.

scholarly journals Environmental Transmission Electron Microscopy Study on the Role of Impurities in Carbon Nanotube Growth

2010 ◽  
Vol 16 (S2) ◽  
pp. 1270-1271
Author(s):  
H Yoshida ◽  
T Shimizu ◽  
T Uchiyama ◽  
H Kohno ◽  
S Takeda
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Carbon Nanotube ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Transmission Electron Microscopy Study ◽  
Transmission Electron ◽  
Carbon Nanotube Growth ◽  
Nanotube Growth

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

A Transmission Electron Microscopy Study of the Role of Sc+Zr Addition to a 6082-T8 Alloy Subjected to Equal Channel Angular Pressing

2006 ◽  
Vol 503-504 ◽  
pp. 841-846 ◽  
Author(s):  
Marcello Cabibbo ◽  
E. Evangelista ◽  
C. Scalabroni ◽  
Ennio Bonetti
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Equal Channel Angular Pressing ◽  
True Strain ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Angular Pressing ◽  
Transmission Electron ◽  
Parent Alloy

The microstructural evolution with strain was investigated either in a Zr-modified 6082 Al-Mg-Si alloy and in the same alloy added with 0.117wt.% Sc, subjected to severe plastic deformations. Materials were deformed by equal-channel angular pressing using route BC, up to a true strain of ∼12. A strain of ~4 produced a sub-micrometer scale microstructure with very fine cells (nanometer scale) in the grain interior. The role of fine dispersoids (Al3(Sc1-x,Zrx)) was investigated by transmission electron microscopy techniques and discussed. Dispersoids were responsible for a more complex dislocation substructure with strain. Compared to the commercial parent alloy, block wall formation and propagation were favored by the presence of Sc-Zr containing dispersoids, while cell boundary evolution was less affected, compared to the commercial parent alloy. Mean misorientation across block walls increased with strain much more in the Sc-Zr containing alloy, reaching a plateau, starting from a true strain of ∼8. Misorientation across cell boundaries continuously increased to ∼8° and ∼5° for the Sc-Zr and Zr containing alloy, respectively.

In situ transmission electron microscopy study of the silicidation process in Co thin films on patterned (001) Si substrates

2001 ◽  
Vol 16 (3) ◽  
pp. 701-708 ◽  
Author(s):  
C. Ghica ◽  
L. Nistor ◽  
H. Bender ◽  
A. Steegen ◽  
A. Lauwers ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Ex Situ ◽  
Transmission Electron Microscopy Study ◽  
Fast Heating ◽  
Si Substrates ◽  
Transmission Electron

The results of an in situ transmission electron microscopy study of the formation of Co-silicides on patterned (001) Si substrates are discussed. It is shown that the results of the in situ heating experiments agreed very well with the data based on standard rapid thermal annealing experiments. Fast heating rates resulted in better definition of the silicide lines. Also, better lines were obtained for samples that received already a low-temperature ex situ anneal. A Ti cap layer gave rise to a higher degree of epitaxy in the CoSi2 silicide.

Different routes to the formation of C54 TiSi2 in the presence of surface and interface molybdenum: A transmission electron microscopy study

2002 ◽  
Vol 17 (4) ◽  
pp. 784-789 ◽  
Author(s):  
Z-B. Zhang ◽  
S-L. Zhang ◽  
D-Z. Zhu ◽  
H-J. Xu ◽  
Y. Chen
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Direct Evidence ◽  
Sample Surface ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Cross Sectional ◽  
Surface And Interface ◽  
Si Substrates ◽  
Transmission Electron

Direct evidence revealing fundamental differences in sequence of phase formation during the growth of TiSi2 in the presence of an ultrathin surface or interface Mo layer is presented. Results of cross-sectional transmission electron microscopy showed that when the Mo layer was present at the interface between Ti films and Si substrates, C40 (Mo,Ti)Si2 formed at the interface, and Ti5Si3 grew on top after annealing at 550 °C. Additionally, both C54 and C40 TiSi2 were found in the close vicinity of the C40 (Mo,Ti)Si2 grains. No C49 grains were detected. Raising the annealing temperature to 600 °C led to the formation of C54 TiSi2 at the expense of Ti5Si3, and the interfacial C40 (Mo,Ti)Si2 also began to transform into C54 (Mo,Ti)Si2 at 600 °C. When the Mo was deposited on top of Ti, the silicide film was almost solely composed of C49 TiSi2 at 600 °C. However, a small amount of (Mo,Ti)5Si3 was still present in the vicinity of the sample surface. Upon annealing at 650 °C, only the C54 phase was found throughout the entire TiSi2 layer with a surface (Mo,Ti)Si2 on top of TiSi2. Hence, it was unambiguously shown that in the presence of surface versus interface Mo, different routes were taken to the formation of C54 TiSi2.

The role of boundaries in the superconducting properties of sintered YBa2Cu3O7−x

1987 ◽  
Vol 2 (6) ◽  
pp. 750-756 ◽  
Author(s):  
R. A. Camps ◽  
J. E. Evetts ◽  
B. A. Glowacki ◽  
S. B. Newcomb ◽  
W. M. Stobbs
Keyword(s):  
Technological Development ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Superconducting Properties ◽  
Transmission Electron Microscopy Study ◽  
The Poor ◽  
Transmission Electron ◽  
Superconducting Oxides

Since the discovery of high critical temperature superconducting oxides, an important factor potentially limiting their technological application has been the typically low value of the critical current density that they can carry. Here are presented the results of a transmission electron microscopy study of sintered YBa2Cu3O7−x aimed primarily at the characterization of those elements of the microstructure responsible for the poor current-carrying capacity in the superconducting state. The observations are further discussed in relation both to the flux pinning characteristics required and to the prospect for controlling the microstructure in order to optimize the properties of this material for technological development.

Factors influencing adhesive bonding at the bone/implant interface

1992 ◽  
Vol 50 (2) ◽  
pp. 1114-1115
Author(s):  
Julie A. Martini ◽  
Robert H. Doremus
Keyword(s):  
Electron Microscopy ◽  
Adhesive Bonding ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Bone Implant ◽  
Factors Influencing ◽  
Lr White ◽  
Transmission Electron ◽  
New Zealand White Rabbits ◽  
Scanning Electron

Tracy and Doremus have demonstrated chemical bonding between bone and hydroxylapatite with transmission electron microscopy. Now researchers ponder how to improve upon this bond in turn improving the life expectancy and biocompatibility of implantable orthopedic devices.This report focuses on a study of the- chemical influences on the interfacial integrity and strength. Pure hydroxylapatite (HAP), magnesium doped HAP, strontium doped HAP, bioglass and medical grade titanium cylinders were implanted into the tibial cortices of New Zealand white rabbits. After 12 weeks, the implants were retrieved for a scanning electron microscopy study coupled with energy dispersive spectroscopy.Following sacrifice and careful retrieval, the samples were dehydrated through a graduated series starting with 50% ethanol and continuing through 60, 70, 80, 90, 95, and 100% ethanol over a period of two days. The samples were embedded in LR White. Again a graduated series was used with solutions of 50, 75 and 100% LR White diluted in ethanol.

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