Study of aerodynamic focusing lens stacks (ALS) for long focal length aerosol-assisted focused chemical vapor deposition (AAFCVD)

A new generation system so called AAFCVD printing system has been developed. It is a mask-free printing system with longer focal length and compatibility for AACVD.

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Direct Mechano-Sliding Transfer of Chemical Vapor Deposition Grown Silicon Nanowires for Nanoscale Electronic Devices

Journal of Materials Chemistry C ◽

10.1039/d1tc05092c ◽

2022 ◽

Author(s):

Dongbao Yin ◽

Jie Li ◽

Jianfei Feng ◽

Wenzhe Liu ◽

Zhiheng Yang ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Nanowires ◽

Vapor Deposition ◽

Electronic Devices ◽

Chemical Vapor ◽

One Dimensional ◽

New Generation

Silicon nanowires (SiNWs) have been widely used in the new generation of nanocircuits. In order to establish efficient and reliable fabrication procedures of one-dimensional nanowire devices, controllable assembly of SiNWs...

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Uniformity and Quality of Monocrystalline Silicon Passivation by Thin Intrinsic Amorphous Silicon in a New Generation Plasma-enhanced Chemical Vapor Deposition Reactor

MRS Proceedings ◽

10.1557/proc-1245-a01-04 ◽

2010 ◽

Vol 1245 ◽

Cited By ~ 7

Author(s):

Benjamin Strahm ◽

Yoann Andrault ◽

Derk Bäetzner ◽

Damien Lachenal ◽

Chloé Guérin ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Mean Value ◽

Open Circuit ◽

Monocrystalline Silicon ◽

Silicon Substrates ◽

Large Area ◽

New Generation

AbstractThis work reports the first results of a new generation plasma-enhanced chemical vapor deposition (PECVD) reactor manufactured by Roth and Rau. This large area parallel plate reactor has been especially designed for the manufacturing of silicon heterojunction solar cells which are made of very thin amorphous silicon films over monocrystalline silicon substrates. Layer thickness uniformity below ± 3 % is reported for both intrinsic and doped layer over a 400 × 400 mm2 area. Moreover, it is shown that the passivation quality is excellent with life-times up to 4.15 ms on n-type FZ silicon substrates. A ± 0.6 % uniformity in open circuit voltage (mean value of 701.4 mV) is achieved over 32 devices having a 4 cm2 area and an average conversion efficiency of 19.5 %.

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In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100137653 ◽

1995 ◽

Vol 53 ◽

pp. 256-257

Author(s):

J. Drucker ◽

R. Sharma ◽

J. Kouvetakis ◽

K.H.J. Weiss

Keyword(s):

Electron Beam ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Quantum Effect ◽

Line Drawing ◽

Chemical Vapor ◽

Environmental Cell ◽

Engineering Changes ◽

Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

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The relaxation of compressive biaxial strains in SOS via microtwins

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100155013 ◽

1989 ◽

Vol 47 ◽

pp. 608-609

Author(s):

M. E. Twigg ◽

E. D. Richmond ◽

J. G. Pellegrino

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Molecular Beam Epitaxy ◽

Compressive Stress ◽

Vapor Deposition ◽

Partial Dislocation ◽

Molecular Beam ◽

Volume Fraction ◽

Chemical Vapor ◽

Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

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