The functionalization of polyacrylamide with MoS2 nanoflakes for use in transient photodetectors

2021 ◽  
Author(s):  
Arpit Verma ◽  
Priyanka Chaudhary ◽  
Ravi Kant Tripathi ◽  
B. C. Yadav
Keyword(s):  
Solvent Free ◽  
Frontal Polymerization ◽  
Transitional Metal ◽  
Metal Dichalcogenides ◽  
Acrylamide Monomers

Herein, we report solvent-free frontal polymerization of acrylamide monomers with transitional metal dichalcogenides (TMDs), i.e. MoS2 nanoflakes.

scholarly journals Fine structures of valley-polarized excitonic states in monolayer transitional metal dichalcogenides

Nanophotonics ◽  
2020 ◽  
Vol 9 (7) ◽  
pp. 1811-1829 ◽  
Author(s):  
Zhipeng Li ◽  
Tianmeng Wang ◽  
Shengnan Miao ◽  
Zhen Lian ◽  
Su-Fei Shi
Keyword(s):  
Optical Excitation ◽  
Coherence Time ◽  
Two Dimensions ◽  
Degree Of Freedom ◽  
Research Progress ◽  
Many Body ◽  
Transitional Metal ◽  
Metal Dichalcogenides ◽  
Fine Structures ◽  
Excitonic States

AbstractMonolayer transitional metal dichalcogenides (TMDCs), a new class of atomically thin semiconductor, respond to optical excitation strongly with robust excitons, which stem from the reduced screening in two dimensions. These excitons also possess a new quantum degree of freedom known as valley spin, which has inspired the field of valleytronics. The strongly enhanced Coulomb interaction allows the exciton to bind with other particles to form new excitonic states. However, despite the discovery of trions, most of the excitonic states in monolayer TMDCs remain elusive until recently, when new light was shed into the fascinating excitonic fine structures with drastically improved sample quality through boron nitride encapsulation. Here, we review the latest research progress on fine structures of excitonic states in monolayer TMDCs, with a focus on tungsten-based TMDCs and related alloy. Many of the new excitonic complexes inherit the valley degree of freedom, and the valley-polarized dark excitonic states are of particular interest because of their long lifetime and possible long valley coherence time. The capability of resolving the excitonic fine structures also enables the investigation of exciton–phonon interactions. The knowledge of the interlayer between excitons and other particles not only advances our understanding of many-body effects in the monolayer TMDCs but also provides guidance on future applications based on TMDCs.

Solvent-free free-radical frontal polymerization: A new approach to quickly synthesize poly(N-vinylpyrrolidone)

2008 ◽  
Vol 46 (6) ◽  
pp. 2177-2185 ◽  
Author(s):  
Xiaojing Cai ◽  
Su Chen ◽  
Li Chen
Keyword(s):  
Free Radical ◽  
Solvent Free ◽  
Frontal Polymerization ◽  
New Approach

Solvent-Free Synthesis by Free-Radical Frontal Polymerization

1999 ◽  
pp. 140-153 ◽  
Author(s):  
John A. Pojman ◽  
Dionne Fortenberry ◽  
Lydia Lee Lewis ◽  
Chris Simmons ◽  
Victor Ilyashenko
Keyword(s):  
Free Radical ◽  
Solvent Free ◽  
Frontal Polymerization ◽  
Solvent Free Synthesis

scholarly journals Melt Blown Fiber-Assisted Solvent-Free Device Fabrication at Low-Temperature

Micromachines ◽  
2020 ◽  
Vol 11 (12) ◽  
pp. 1091
Author(s):  
Minjong Lee ◽  
Joohoon Kang ◽  
Young Tack Lee
Keyword(s):  
Transition Metal Dichalcogenides ◽  
Hole Mobility ◽  
Device Fabrication ◽  
Solvent Free ◽  
Oxide Semiconductor ◽  
Drain Voltage ◽  
Cmos Inverter ◽  
Current Ratio ◽  
Metal Dichalcogenides ◽  
P Type

In this paper, we propose a solvent-free device fabrication method using a melt-blown (MB) fiber to minimize potential chemical and thermal damages to transition-metal-dichalcogenides (TMDCs)-based semiconductor channel. The fabrication process is composed of three steps; (1) MB fibers alignment as a shadow mask, (2) metal deposition, and (3) lifting-up MB fibers. The resulting WSe2-based p-type metal-oxide-semiconductor (PMOS) device shows an ON/OFF current ratio of ~2 × 105 (ON current of ~−40 µA) and a remarkable linear hole mobility of ~205 cm2/V·s at a drain voltage of −0.1 V. These results can be a strong evidence supporting that this MB fiber-assisted device fabrication can effectively suppress materials damage by minimizing chemical and thermal exposures. Followed by an MoS2-based n-type MOS (NMOS) device demonstration, a complementary MOS (CMOS) inverter circuit application was successfully implemented, consisted of an MoS2 NMOS and a WSe2 PMOS as a load and a driver transistor, respectively. This MB fiber-based device fabrication can be a promising method for future electronics based on chemically reactive or thermally vulnerable materials.

scholarly journals Quantum valley Hall effect and perfect valley filter based on photonic analogs of transitional metal dichalcogenides

2017 ◽  
Vol 95 (23) ◽  
Author(s):  
O. Bleu ◽  
D. D. Solnyshkov ◽  
G. Malpuech
Keyword(s):  
Hall Effect ◽  
Transitional Metal ◽  
Metal Dichalcogenides ◽  
Valley Hall Effect

Transitional Metal/Chalcogen Dependant Interactions of Hairpin DNA with Transition Metal Dichalcogenides, MX2

ChemPhysChem ◽  
2015 ◽  
Vol 16 (11) ◽  
pp. 2304-2306 ◽  
Author(s):  
Adeline Huiling Loo ◽  
Alessandra Bonanni ◽  
Zdenek Sofer ◽  
Martin Pumera
Keyword(s):  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Hairpin Dna ◽  
Transitional Metal ◽  
Metal Dichalcogenides

Quantum Dots of 1T Phase Transitional Metal Dichalcogenides GeneratedviaElectrochemical Li Intercalation

ACS Nano ◽  
2017 ◽  
Vol 12 (1) ◽  
pp. 308-316 ◽  
Author(s):  
Wenshu Chen ◽  
Jiajun Gu ◽  
Qinglei Liu ◽  
Ruichun Luo ◽  
Lulu Yao ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Transitional Metal ◽  
Metal Dichalcogenides

Solvent-free synthesis of polyacrylamide by frontal polymerization

2000 ◽  
Vol 38 (7) ◽  
pp. 1129-1135 ◽  
Author(s):  
Dionne I. Fortenberry ◽  
John A. Pojman
Keyword(s):  
Solvent Free ◽  
Frontal Polymerization ◽  
Solvent Free Synthesis

scholarly journals All-optical modulation with 2D layered materials: status and prospects

Nanophotonics ◽  
2020 ◽  
Vol 9 (8) ◽  
pp. 2107-2124 ◽  
Author(s):  
Haitao Chen ◽  
Cong Wang ◽  
Hao Ouyang ◽  
Yufeng Song ◽  
Tian Jiang
Keyword(s):  
2D Materials ◽  
Optical Modulation ◽  
Optical Modulators ◽  
Ultrafast Optical ◽  
2D Layered Materials ◽  
Transitional Metal ◽  
All Optical ◽  
Challenges And Opportunities ◽  
Metal Dichalcogenides ◽  
Increasing Demand

AbstractOptical modulation technique plays a crucial role in photonics technologies, and there is an ever-increasing demand for broadband and ultrafast optical modulation in the era of artificial intelligence. All-optical modulation is known to be able to operate in an ultrafast way and has a broadband response, showing great potential in applications for ultrafast information processing and photonic computing. Two-dimensional (2D) materials with exotic optoelectronic properties bring tremendous new opportunities for all-optical modulators with excellent performance, which have attracted lots of attention recently. In this review, we cover the state-of-art all-optical modulation based on 2D materials, including graphene, transitional metal dichalcogenides, phosphorus, and other novel 2D materials. We present the operations mechanism of different types of all-optical modulators with various configurations, such as fiber-integrated and free-space ones. We also discuss the challenges and opportunities faced by all-optical modulation, as well as offer some future perspectives for the development of all-optical modulation based on 2D materials.

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