An electroforming-free mechanism for Cu2O solid-electrolyte-based conductive-bridge random access memory (CBRAM)

2020 ◽  
Vol 8 (24) ◽  
pp. 8125-8134
Author(s):  
Ki-Hyun Kwon ◽  
Dong-Won Kim ◽  
Hea-Jee Kim ◽  
Soo-Min Jin ◽  
Dae-Seong Woo ◽  
...  
Keyword(s):  
Solid Electrolyte ◽  
Annealing Temperature ◽  
Random Access ◽  
Random Access Memory ◽  
Ex Situ ◽  
Access Memory ◽  
Conductive Bridge

In a CuxO solid-electrolyte-based CBRAM cell using an Ag top electrode, electroforming-free and electro-reset processes could be achieved at a specific ex situ annealing temperature of the solid electrolyte.

scholarly journals Publisher's Note: “Set statistics in conductive bridge random access memory device with Cu/HfO2/Pt structure” [Appl. Phys. Lett. 105, 193501 (2014)]

2015 ◽  
Vol 106 (15) ◽  
pp. 159901
Author(s):  
Meiyun Zhang ◽  
Shibing Long ◽  
Guoming Wang ◽  
Xiaoxin Xu ◽  
Yang Li ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Memory Device ◽  
Access Memory ◽  
Conductive Bridge

Superior Retention of Low-Resistance State in Conductive Bridge Random Access Memory With Single Filament Formation

2015 ◽  
Vol 36 (2) ◽  
pp. 129-131 ◽  
Author(s):  
Xiaoxin Xu ◽  
Hangbing Lv ◽  
Hongtao Liu ◽  
Tiancheng Gong ◽  
Guoming Wang ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Filament Formation ◽  
Access Memory ◽  
Single Filament ◽  
Low Resistance ◽  
Conductive Bridge ◽  
Resistance State

Nanoscale CuO solid-electrolyte-based conductive-bridging-random-access-memory cell operating multi-level-cell and 1selector1resistor

2015 ◽  
Vol 3 (37) ◽  
pp. 9540-9550 ◽  
Author(s):  
Kyoung-Cheol Kwon ◽  
Myung-Jin Song ◽  
Ki-Hyun Kwon ◽  
Han-Vit Jeoung ◽  
Dong-Won Kim ◽  
...  
Keyword(s):  
Solid Electrolyte ◽  
Retention Time ◽  
Random Access ◽  
Memory Cell ◽  
Random Access Memory ◽  
Access Memory ◽  
Multi Level

Nanoscale non-volatile CBRAM-cells are developed by using a CuO solid-electrolyte, providing a ∼102memory margin, ∼3 × 106endurance cycles, ∼6.63-years retention time at 85 °C, ∼100 ns writing speed, and MLC operation.

An Electronic Synapse Device Based on Solid Electrolyte Resistive Random Access Memory

2015 ◽  
Vol 36 (8) ◽  
pp. 772-774 ◽  
Author(s):  
Wei Zhang ◽  
Ying Hu ◽  
Ting-Chang Chang ◽  
Kuan-Chang Chang ◽  
Tsung-Ming Tsai ◽  
...  
Keyword(s):  
Solid Electrolyte ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Electronic Synapse
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