Impact of O2 Plasma Treatment on Novel Amorphous Oxide InWZnO on Conductive Bridge Random Access Memory

2021 ◽  
pp. 127539
Author(s):  
Chih-Chieh Hsu ◽  
Po-Tsun Liu ◽  
Kai-Jhih Gan ◽  
Dun-Bao Ruan ◽  
Yu-Chuan Chiu ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Amorphous Oxide ◽  
Conductive Bridge ◽  
O2 Plasma Treatment ◽  
O2 Plasma

scholarly journals Publisher's Note: “Set statistics in conductive bridge random access memory device with Cu/HfO2/Pt structure” [Appl. Phys. Lett. 105, 193501 (2014)]

2015 ◽  
Vol 106 (15) ◽  
pp. 159901
Author(s):  
Meiyun Zhang ◽  
Shibing Long ◽  
Guoming Wang ◽  
Xiaoxin Xu ◽  
Yang Li ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Memory Device ◽  
Access Memory ◽  
Conductive Bridge

Superior Retention of Low-Resistance State in Conductive Bridge Random Access Memory With Single Filament Formation

2015 ◽  
Vol 36 (2) ◽  
pp. 129-131 ◽  
Author(s):  
Xiaoxin Xu ◽  
Hangbing Lv ◽  
Hongtao Liu ◽  
Tiancheng Gong ◽  
Guoming Wang ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Filament Formation ◽  
Access Memory ◽  
Single Filament ◽  
Low Resistance ◽  
Conductive Bridge ◽  
Resistance State

An electroforming-free mechanism for Cu2O solid-electrolyte-based conductive-bridge random access memory (CBRAM)

2020 ◽  
Vol 8 (24) ◽  
pp. 8125-8134
Author(s):  
Ki-Hyun Kwon ◽  
Dong-Won Kim ◽  
Hea-Jee Kim ◽  
Soo-Min Jin ◽  
Dae-Seong Woo ◽  
...  
Keyword(s):  
Solid Electrolyte ◽  
Annealing Temperature ◽  
Random Access ◽  
Random Access Memory ◽  
Ex Situ ◽  
Access Memory ◽  
Conductive Bridge

In a CuxO solid-electrolyte-based CBRAM cell using an Ag top electrode, electroforming-free and electro-reset processes could be achieved at a specific ex situ annealing temperature of the solid electrolyte.

Radial Growth Model for Conical Nanobridge in Resistive Switching Memory Devices

2013 ◽  
Vol 1562 ◽  
Author(s):  
Tong Liu ◽  
Yuhong Kang ◽  
Sarah El-Helw ◽  
Tanmay Potnis ◽  
Marius Orlowski
Keyword(s):  
Growth Rate ◽  
Radial Growth ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Resistive Switching Memory ◽  
Conductive Bridge ◽  
Geometrical Form ◽  
Switching Memory

ABSTRACTA phenomenological model has been proposed for the radial growth of the copper or silver nanobridge in the conductive bridge random access memory devices. In this model, the growth rate of the bridge is proportional to the local ion flux based on the hopping mechanism. Due to the differences of the local electric field, the growth rate is different along a conical shape nanobridge. The model accounts for the growth rate difference by introducing a geometrical form factor. Based on the model, the top and bottom radii are predicted for truncated conical copper nanobridge. The model is validated with data obtained on Cu/TaOx/Pt resistive devices.

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