Reliable Ge
2
Sb
2
Te
5
‐Integrated High‐Density Nanoscale Conductive Bridge Random Access Memory using Facile Nitrogen‐Doping Strategy
2018 ◽
Vol 4
(11)
◽
pp. 1800360
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2015 ◽
Vol 36
(2)
◽
pp. 129-131
◽
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