Thickness Impact on the Morphology, Strain Relaxation and Defects of Diamond Heteroepitaxially Grown on Ir/Al2O3 Substrates

This paper investigates the formation and propagation of defects in the heteroepitaxial growth of single-crystal diamond with a thick film achieving 500 µm on Ir (001)/Al2O3 substrate. The growth of diamond follows the Volmer–Weber mode, i.e., initially shows the islands and subsequently coalesces to closed films. The films’ strain imposed by the substrate gradually relaxed as the film thickness increased. It was found that defects are mainly located at the diamond/Ir interface and are then mainly propagated along the [001] direction from the nucleation region. Etching pits along the [001] direction formed by H2/O2 plasma treatment were used to show defect distribution at the diamond/Ir/Al2O3 interface and in the diamond bulk, which revealed the reduction of etching pit density in diamond thick-film surface. These results show the evident impact of the thickness on the heteroepitaxially grown diamond films, which is of importance for various device applications.

Synthesis and Characterization of a Novel Biocompatible Alloy, Ti-Nb-Zr-Ta-Sn

Many current-generation biomedical implants are fabricated from the Ti-6Al-4V alloy because it has many attractive properties, such as low density and biocompatibility. However, the elastic modulus of this alloy is much larger than that of the surrounding bone, leading to bone resorption and, eventually, implant failure. In the present study, we synthesized and performed a detailed analysis of a novel low elastic modulus Ti-based alloy (Ti-28Nb-5Zr-2Ta-2Sn (TNZTS alloy)) using a variety of methods, including scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and tensile test. Additionally, the in vitro biocompatibility of the TNZTS alloy was evaluated using SCP-1, SaOs-2, and THP-1 cell lines and primary human osteoblasts. Compared to Ti-6Al-4V, the elastic modulus of TNZTS alloy was significantly lower, while measures of its in vitro biocompatibility are comparable. O2 plasma treatment of the surface of the alloy significantly increased its hydrophilicity and, hence, its in vitro biocompatibility. TNZTS alloy specimens did not induce the release of cytokines by macrophages, indicating that such scaffolds would not trigger inflammatory responses. The present results suggest that the TNZTS alloy may have potential as an alternative to Ti-6Al-4V.

Stability of Ar/O2 Plasma-Treated Polypropylene Membranes Applied for Membrane Distillation

In the present work, Ar/O2 plasma treatment was used as a surface modification tool for polypropylene (PP) membranes. The effect of the plasma conditions on the properties of the modified PP surface has been investigated. For this purpose, the influence of gas composition and its flow rate, plasma power excitation as well as treatment time on the contact angle of PP membranes has been investigated. The properties of used membranes were determined after various periods of time: immediately after the modification process as well as after one, four and five years of storage. Moreover, the used membranes were evaluated in terms of their performance in long-term MD process. Through detailed studies, we demonstrated that the performed plasma treatment process effectively enhanced the performance of the modified membranes. In addition, it was shown that the surface modification did not affect the degradation of the membrane matrix. Indeed, the used membranes maintained stable process properties throughout the studied period.

Promoting Photoelectrochemical Water Oxidation on Ti-Doped Fe2O3 Nanowires Photoanode by O2 Plasma Treatment

Surface electron traps on semiconductor photoanodes mediate surface recombination and deteriorate the photoelectrochemical (PEC) water oxidation performance of the photoanode. Developing convenient methods to reduce surface electron traps is therefore essential for high efficiency PEC water oxidation on semiconductor photoanodes, particularly for nanostructured photoanodes with large surface area. Herein, we employ a O2 plasma treatment to boost the PEC water oxidation performance of Ti-doped Fe2O3 (Ti-Fe2O3) nanowires photoanodes, aiming to reduce surface oxygen vacancies, the dominant electron traps on Ti-Fe2O3 surface. X-ray diffraction (XRD), scanning electron microscopy and spectroscopic analyses show that the oxygen plasma treatment changes the structural, morphological and optical properties negligibly, but it does reduce the content of surface oxygen vacancies, as estimated from O1s X-ray photoelectron spectroscopy spectra. An optimal O2 plasma treatment (200 W, 70 s) increases the photocurrent density of the Ti-Fe2O3 nanowire photoanode to 2.14 mA·cm−2 (1.23 V vs. RHE) under air mass 1.5G simulated solar light, which is 1.95 times higher than the pristine Ti-Fe2O3 nanowire photoanode. The surface hole transfer efficiency is also improved by 1.66 times due to the reduced surface recombination. The work suggests that O2 plasma treatment is a convenient but effective method to boost the PEC water oxidation performance of Ti-Fe2O3 photoanode and might be applicable to other semiconducting oxide photoanodes for high efficiency PEC water splitting.

Work Function Tuning of Zinc–Tin Oxide Thin Films Using High-Density O2 Plasma Treatment

Work function tuning has a significant influence on the performance of semiconductor devices, owing to the formation of potential barriers at the interface between metal-semiconductor junctions. In this work, we introduce a technique for tuning the work function of ZnSnO thin films using high-density O2 plasma treatment. The work function and chemical composition of the ZnSnO thin film surfaces were investigated with regards to plasma treatment time through UPS/XPS systems. The optical band gap was estimated using Tauc’s relationship from transmittance data. The work function of Zn0.6Sn0.4O thin film increased from 4.16 eV to 4.64 eV, and the optical band gap increased from 3.17 to 3.23 eV. The surface of Zn0.6Sn0.4O thin films showed a smooth morphology with an average of 0.65 nm after O2 plasma treatment. The O2 plasma treatment technique exhibits significant potential for application in high-performance displays in optical devices, such as thin-film transistors (TFTs), light-emitting diodes (LEDs), and solar cells.