Multi‐Level Control of Conductive Filament Evolution and Enhanced Resistance Controllability of the Cu‐Cone Structure Embedded Conductive Bridge Random Access Memory

2021 ◽  
pp. 2100209
Author(s):  
Hae Jin Kim ◽  
Jihun Kim ◽  
Tae Gyun Park ◽  
Jung Ho Yoon ◽  
Cheol Seong Hwang
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Level Control ◽  
Access Memory ◽  
Conductive Filament ◽  
Cone Structure ◽  
Enhanced Resistance ◽  
Conductive Bridge ◽  
Multi Level

Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Conductive Filament ◽  
Filament Temperature

scholarly journals Publisher's Note: “Set statistics in conductive bridge random access memory device with Cu/HfO2/Pt structure” [Appl. Phys. Lett. 105, 193501 (2014)]

2015 ◽  
Vol 106 (15) ◽  
pp. 159901
Author(s):  
Meiyun Zhang ◽  
Shibing Long ◽  
Guoming Wang ◽  
Xiaoxin Xu ◽  
Yang Li ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Memory Device ◽  
Access Memory ◽  
Conductive Bridge

Superior Retention of Low-Resistance State in Conductive Bridge Random Access Memory With Single Filament Formation

2015 ◽  
Vol 36 (2) ◽  
pp. 129-131 ◽  
Author(s):  
Xiaoxin Xu ◽  
Hangbing Lv ◽  
Hongtao Liu ◽  
Tiancheng Gong ◽  
Guoming Wang ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Filament Formation ◽  
Access Memory ◽  
Single Filament ◽  
Low Resistance ◽  
Conductive Bridge ◽  
Resistance State

Nanoscale CuO solid-electrolyte-based conductive-bridging-random-access-memory cell operating multi-level-cell and 1selector1resistor

2015 ◽  
Vol 3 (37) ◽  
pp. 9540-9550 ◽  
Author(s):  
Kyoung-Cheol Kwon ◽  
Myung-Jin Song ◽  
Ki-Hyun Kwon ◽  
Han-Vit Jeoung ◽  
Dong-Won Kim ◽  
...  
Keyword(s):  
Solid Electrolyte ◽  
Retention Time ◽  
Random Access ◽  
Memory Cell ◽  
Random Access Memory ◽  
Access Memory ◽  
Multi Level

Nanoscale non-volatile CBRAM-cells are developed by using a CuO solid-electrolyte, providing a ∼102memory margin, ∼3 × 106endurance cycles, ∼6.63-years retention time at 85 °C, ∼100 ns writing speed, and MLC operation.

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