Modulation of light absorption in flexible GeSn metal–semiconductor–metal photodetectors by mechanical bending

We have demonstrated flexible GeSn metal–semiconductor–metal (MSM) photodetectors (PDs) by exploring the effect of mechanical strain on their optoelectronic properties.

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Metal-semiconductor-metal (MSM) photodetectors with plasmonic nanogratings*

Pure and Applied Chemistry ◽

10.1351/pac-con-11-01-13 ◽

2011 ◽

Vol 83 (11) ◽

pp. 2107-2113 ◽

Cited By ~ 3

Author(s):

Narottam Das ◽

Ayman Karar ◽

Chee Leong Tan ◽

Mikhail Vasiliev ◽

Kamal Alameh ◽

...

Keyword(s):

Light Absorption ◽

Enhancement Factor ◽

Signal Propagation ◽

Optical Signal ◽

Fdtd Simulation ◽

Absorption Enhancement ◽

Metal Semiconductor Metal ◽

Simulation Results ◽

Msm Photodetectors ◽

Difference Time

We discuss the light absorption enhancement factor dependence on the design of nanogratings inscribed into metal-semiconductor-metal photodetector (MSM-PD) structures. These devices are optimized geometrically, leading to light absorption improvement through plasmon-assisted effects. Finite-difference time-domain (FDTD) simulation results show ~50 times light absorption enhancement for 850 nm light due to improved optical signal propagation through the nanogratings. Also, we show that the light absorption enhancement is strongly dependent on the nanograting shapes in MSM-PDs.

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THE STUDY OF Pd SCHOTTKY CONTACT ON POROUS GaN FOR UV METAL–SEMICONDUCTOR–METAL (MSM) PHOTODETECTORS

Journal of Nonlinear Optical Physics & Materials ◽

10.1142/s0218863507003871 ◽

2007 ◽

Vol 16 (04) ◽

pp. 497-503 ◽

Cited By ~ 1

Author(s):

L. S. CHUAH ◽

Z. HASSAN ◽

H. ABU HASSAN

Keyword(s):

Molecular Beam Epitaxy ◽

Tensile Stress ◽

Molecular Beam ◽

Schottky Contact ◽

Nitrogen Plasma ◽

Porous Sample ◽

Optical Studies ◽

High Quality ◽

Metal Semiconductor Metal ◽

Msm Photodetectors

High quality unintentionally doped n-type GaN layers were grown on Si (111) substrate using AlN (about 200 nm) as buffer layer by radio frequency (RF) nitrogen plasma-assisted molecular beam epitaxy (MBE). This paper presents the structural and optical studies of porous GaN sample compared to the corresponding as-grown GaN. Metal–semiconductor–metal (MSM) photodiode was fabricated on the samples. For as-grown GaN-based MSM, the detector shows a sharp cut-off wavelength at 362 nm, with a maximum responsivity of 0.254 A/W achieved at 360 nm. For porous GaN MSM detector, a sharp cut-off wavelength at 360 nm with a maximum responsivity of 0.655 A/W was achieved at 359 nm. Both the detectors show a little decrease in responsivity in the UV spectral region. The MSM photodiode based on porous GaN shows enhanced (2×) magnitude of responsivity relative to the as-grown GaN MSM photodiode. Enhancement of responsivity can be attributed to the relaxation of tensile stress and reduction of surface pit density in the porous sample.

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Donor Acceptor Copolymers from Cyclopentannulation Polymerizations with Dicyclopenta[cd,jk]pyrene and Dicyclopenta[cd,lm]perylene Acceptors

10.26434/chemrxiv.12344258 ◽

2020 ◽

Author(s):

Ain Uddin ◽

Kyle Plunkett

Keyword(s):

Thin Film ◽

Cyclic Voltammetry ◽

Light Absorption ◽

Visible Region ◽

Optoelectronic Properties ◽

Band Gaps ◽

Molecular Weights ◽

Palladium Catalyzed ◽

Donor Acceptor ◽

Film Absorption

A series of donor-acceptor copolymers with dicyclopenta[cd,jk]pyrene and dicyclopenta[cd,lm]perylene acceptor units was prepared via palladium catalyzed cyclopenta-annulation reactions. The acceptor units were paired with diethynyl containing donor groups based on benzo[1,2-b:4,5-b']dithiophene, thieno[3,2-b]thiophene, and 4-octyl-4H-dithieno[3,2-b:2',3'-d]pyrrole to create six polymer variants. The cyclopentannulation polymerization resulted in copolymers with molecular weights (Mn) of 6-14 kDa and broad light absorption in the visible region with band gaps of 1.38-1.85 eV. The synthetic methodology, as well as optoelectronic properties, including thin-film absorption and cyclic voltammetry, of the donor-acceptor copolymers are presented.<br> <br><br>

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Surface structure, optoelectronic properties and charge transport in ZnO nanocrystal/MDMO-PPV multilayer films

Physical Chemistry Chemical Physics ◽

10.1039/c8cp01148f ◽

2018 ◽

Vol 20 (17) ◽

pp. 12260-12271 ◽

Cited By ~ 1

Author(s):

Qing Lian ◽

Mu Chen ◽

Muhamad Z. Mokhtar ◽

Shanglin Wu ◽

Mingning Zhu ◽

...

Keyword(s):

Solar Cells ◽

Charge Transport ◽

Surface Structure ◽

Light Absorption ◽

Open Circuit Voltage ◽

Multilayer Films ◽

Open Circuit ◽

Optoelectronic Properties ◽

Photoluminescence Quenching ◽

Zno Nanocrystal

ZnO nanocrystal/MDMO-PPV multilayer films were studied that contained six bilayers and showed excellent light absorption tuneability, photoluminescence quenching and solar cells exhibited a surprisingly high open circuit voltage.

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