Photoelectrochemical Sensor Based on Acetylcholinesterase- CdS/ZnO-Modified Extended-Gate Field-Effect Transistor for Glyphosate Detection

The Analyst ◽  
2021 ◽  
Author(s):  
Jiarui Yu ◽  
Jingyu Lin ◽  
Jianping Li
Keyword(s):  
Ache Activity ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Sensitive Detection ◽  
Highly Sensitive ◽  
Photoelectrochemical Sensor ◽  
Enzyme Biosensor ◽  
Effect Transistor ◽  
Highly Sensitive Detection

A new photoelectrochemical enzyme biosensor based on extended-gate field-effect transistor (EGFET) was constructed for the highly sensitive detection of glyphosate based on the inhibition of acetylcholinesterase (AChE) activity by glyphosate....

scholarly journals Highly Sensitive and Selective Sodium Ion Sensor Based on Silicon Nanowire Dual Gate Field-Effect Transistor

Sensors ◽  
2021 ◽  
Vol 21 (12) ◽  
pp. 4213
Author(s):  
Seong-Kun Cho ◽  
Won-Ju Cho
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Silicon On Insulator ◽  
Sodium Ion ◽  
Ion Sensor ◽  
Highly Sensitive ◽  
Selective Membrane ◽  
Dual Gate ◽  
Effect Transistor

In this study, a highly sensitive and selective sodium ion sensor consisting of a dual-gate (DG) structured silicon nanowire (SiNW) field-effect transistor (FET) as the transducer and a sodium-selective membrane extended gate (EG) as the sensing unit was developed. The SiNW channel DG FET was fabricated through the dry etching of the silicon-on-insulator substrate by using electrospun polyvinylpyrrolidone nanofibers as a template for the SiNW pattern transfer. The selectivity and sensitivity of sodium to other ions were verified by constructing a sodium ion sensor, wherein the EG was electrically connected to the SiNW channel DG FET with a sodium-selective membrane. An extremely high sensitivity of 1464.66 mV/dec was obtained for a NaCl solution. The low sensitivities of the SiNW channel FET-based sodium ion sensor to CaCl2, KCl, and pH buffer solutions demonstrated its excellent selectivity. The reliability and stability of the sodium ion sensor were verified under non-ideal behaviors by analyzing the hysteresis and drift. Therefore, the SiNW channel DG FET-based sodium ion sensor, which comprises a sodium-selective membrane EG, can be applied to accurately detect sodium ions in the analyses of sweat or blood.

Ultra-sensitive boscalid sensors based on β-cyclodextrin modified perfluorinated copper phthalocyanine field-effect transistor

2021 ◽  
Author(s):  
Yunpeng Zhang ◽  
Junhua Kuang ◽  
Jicheng Dong ◽  
Longxian Shi ◽  
Qingyuan Li ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Copper Phthalocyanine ◽  
Sensitive Detection ◽  
Effect Transistor

The increased use of pesticides has raised concerns about the risks of exposure to pesticides. Rapid, simple and sensitive detection of pesticides is still a challenge in the current analytical...

Conversion of protein net charge via chemical modification for highly sensitive prion detection using field effect transistor (FET) biosensor

2016 ◽  
Vol 230 ◽  
pp. 374-379 ◽  
Author(s):  
Shofarul Wustoni ◽  
Sho Hideshima ◽  
Shigeki Kuroiwa ◽  
Takuya Nakanishi ◽  
Yasuro Mori ◽  
...  
Keyword(s):  
Chemical Modification ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Net Charge ◽  
Highly Sensitive ◽  
Effect Transistor

A highly sensitive and versatile chiral sensor based on a top-gate organic field effect transistor functionalized with thiolated β-cyclodextrin

The Analyst ◽  
2019 ◽  
Vol 144 (8) ◽  
pp. 2611-2617 ◽  
Author(s):  
Xuepeng Wang ◽  
Yong Wang ◽  
Yifan Wu ◽  
Yin Xiao
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Organic Field Effect Transistor ◽  
Highly Sensitive ◽  
Effect Transistor

A chiral sensor was successfully constructed by modifying an OFET gate with SH-β-CD.

scholarly journals Portable Immunosensor Based on Extended Gate—Field Effect Transistor for Rapid, Sensitive Detection of Cancer Markers

Proceedings ◽  
2019 ◽  
Vol 15 (1) ◽  
pp. 32
Author(s):  
Baldacchini ◽  
Bizzarri ◽  
Montanarella ◽  
Pascali ◽  
Lorenzelli ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Oxide Semiconductor ◽  
Sensitive Detection ◽  
High Current ◽  
Sensor Device ◽  
Current Variation ◽  
Gate Potential ◽  
Effect Transistor

We present an immunosensor for the rapid and sensitive detection of the p53 oncosuppressor protein and of its mutated form p53R175H, which are both valuable cancer biomarkers. The sensor is based on the accurate measurement of the source-drain current variation of a metal oxide semiconductor field-effect transistor, as due to the gate potential changing arising from charge release upon the selective capture of a biomarker by the partner immobilized on a sensing surface connected to the gate electrode. A suitable microelectronic system is implemented to combine high current resolution, which is needed to be competitive with standard immunoassays, with compact dimensions of the final sensor device.

Highly Sensitive pH Sensing Using an Indium Nitride Ion-Sensitive Field-Effect Transistor

2011 ◽  
Vol 11 (5) ◽  
pp. 1157-1161 ◽  
Author(s):  
Yuh-Hwa Chang ◽  
Yen-Sheng Lu ◽  
Yu-Liang Hong ◽  
Shangjr Gwo ◽  
J. Andrew Yeh
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Indium Nitride ◽  
Ph Sensing ◽  
Highly Sensitive ◽  
Effect Transistor
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