The characteristics of Ib diamond crystals synthesized in a Fe–Ni–C system with different SiC contents

CrystEngComm ◽  
2021 ◽  
Author(s):  
Yongkui Wang ◽  
Zhiwen Wang ◽  
Zhiyun Lu ◽  
Zhenghao Cai ◽  
Shuai Fang ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Growth Mechanism ◽  
Natural Diamond ◽  
Synthetic Diamonds ◽  
Diamond Crystals ◽  
Diamond Inclusions

Silicon carbide (SiC) is a substance found in natural diamond inclusions. Analyzing the influence of SiC doping on the properties of synthetic diamonds is vital to understanding the growth mechanism...

Effect of pressure on synthetic diamond crystals at high temperatures and pressures in Fe/Ni catalyst system

CrystEngComm ◽  
2021 ◽  
Author(s):  
Shuai Fang ◽  
Yongkui Wang ◽  
Liangchao Chen ◽  
Zhiyun Lu ◽  
Zhenghao Cai ◽  
...  
Keyword(s):  
Nitrogen Content ◽  
Growth Mechanism ◽  
Synthetic Diamond ◽  
Natural Diamond ◽  
Catalyst System ◽  
Necessary Condition ◽  
Ni Catalyst ◽  
Effect Of Pressure ◽  
Diamond Crystals ◽  
System P

Pressure is a necessary condition for the growth of natural diamond. Studying the effect of pressure on the nitrogen content of diamond is important for exploring the growth mechanism of...

Growth mechanism of icosahedral and other five-fold symmetric diamond crystals

2015 ◽  
Vol 25 (5) ◽  
pp. 1587-1598 ◽  
Author(s):  
Qiu-ping WEI ◽  
Li MA ◽  
Jun YE ◽  
Zhi-ming YU
Keyword(s):  
Growth Mechanism ◽  
Diamond Crystals

Materials Aspects of Diamond-Based Electronic Devices

1994 ◽  
Vol 339 ◽  
Author(s):  
J. R. Zeidler ◽  
C. A. Hewett ◽  
R. Nguyen
Keyword(s):  
Ohmic Contacts ◽  
Natural Diamond ◽  
Electronic Devices ◽  
Physical Review ◽  
Synthetic Diamonds ◽  
Current Voltage ◽  
Hall Effect Measurements ◽  
Current Voltage Characteristics ◽  
Van Der Pauw ◽  
Electronic Doping

ABSTRACTAn overview of enabling materials technologies required for fabrication of electronic devices on diamond is presented. Emphasis is placed on electronic doping of diamond by boron ion implantation. Van der Pauw resistivity and Hall Effect measurements were used to determine the net carrier concentration, carrier mobility and resistivity of natural and synthetic diamonds implanted under various conditions. The measured results for a range of implantation conditions and post-annealing temperatures are discussed in the context cf a model developed by J.F. Prins1. The requirements placed on ohmic contacts to diamond, and a process for fabricating ohmic contacts, is discussed briefly. Finally, current-voltage characteristics of a simple MISFET fabricated on ion implanted natural diamond are presented and analyzed. 1J.F. Prins, Physical Review B, 38 (1988) 5576.

Synthesis and in situ growth mechanism of wound silicon carbide nanowires

2019 ◽  
Vol 6 (8) ◽  
pp. 085026
Author(s):  
Mi Yuan ◽  
Ziye Li ◽  
Yujia Zheng ◽  
Hong Cao ◽  
Jun Xue
Keyword(s):  
Silicon Carbide ◽  
Growth Mechanism ◽  
In Situ Growth

Contact electrization of natural diamond crystals

2010 ◽  
Vol 36 (2) ◽  
pp. 162-165 ◽  
Author(s):  
E. V. Ryabov ◽  
Yu. S. Mukhachev
Keyword(s):  
Natural Diamond ◽  
Diamond Crystals

Growth Mechanism and Chemical Structure of Amorphous Hydrogenated Silicon Carbide (a-SiC:H) Films Formed by Remote Hydrogen Microwave Plasma CVD From a Triethylsilane Precursor: Part 1

2009 ◽  
Vol 15 (1-3) ◽  
pp. 39-46 ◽  
Author(s):  
Aleksander M. Wrobel ◽  
Agnieszka Walkiewicz-Pietrzykowska ◽  
Marja Ahola ◽  
I. Juhani Vayrynen ◽  
Francisco J. Ferrer-Fernandez ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Growth Mechanism ◽  
Chemical Structure ◽  
Microwave Plasma ◽  
Plasma Cvd ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Microwave Plasma Cvd

scholarly journals Growth mechanism for alternating supply epitaxy: the unique pathway to achieve uniform silicon carbide films on multiple large-diameter silicon substrates

RSC Advances ◽  
2016 ◽  
Vol 6 (20) ◽  
pp. 16662-16667 ◽  
Author(s):  
Li Wang ◽  
Sima Dimitrijev ◽  
Andreas Fissel ◽  
Glenn Walker ◽  
Jessica Chai ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Growth Mechanism ◽  
Large Diameter ◽  
Silicon Substrates

The unique growth mechanism of alternating supply epitaxy enables uniform 3C-SiC to be deposited on multiple large-diameter Si wafers.

scholarly journals Surface Porosity of Natural Diamond Crystals after the Catalytic Hydrogenation

Crystals ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1341
Author(s):  
Aleksei Chepurov ◽  
Valeri Sonin ◽  
Dmitry Shcheglov ◽  
Egor Zhimulev ◽  
Sergey Sitnikov ◽  
...  
Keyword(s):  
Catalytic Hydrogenation ◽  
Materials Science ◽  
Crystal Surface ◽  
Natural Diamond ◽  
Substrate Material ◽  
Diamond Surfaces ◽  
Diamond Crystals ◽  
Type Ia ◽  
Strong Resemblance ◽  
Natural Type

The study of diamond surfaces is traditionally undertaken in geology and materials science. As a sample material, two natural diamond crystals of type Ia were selected, and their luminescence and nitrogen state was characterized. In order to etch the surface catalytic hydrogenation was performed using Fe particles as an etchant. Micromorphology of the surface was investigated by scanning electron and laser confocal microscopy. It was demonstrated that etching occurred perpendicular to the crystal surface, with no signs of tangential etching. The average depth of caverns did not exceed 20–25 μm with a maximal depth of 40 μm. It is concluded that catalytic hydrogenation of natural type Ia diamonds is effective to produce a porous surface that can be used in composites or as a substrate material. Additionally, the comparison of results with porous microsculptures observed on natural impact diamond crystals from the Popigai astrobleme revealed a strong resemblance.

scholarly journals Sintering of composite materials for tool appointment, based on impact diamonds, under high pressure and temperatures

2021 ◽  
Vol 66 (1) ◽  
pp. 47-57
Author(s):  
V. T. Senyut
Keyword(s):  
Silicon Carbide ◽  
Composite Material ◽  
Composite Materials ◽  
Removal Rate ◽  
Structure Type ◽  
Synthetic Diamonds ◽  
The Matrix ◽  
Magnetic Abrasive Polishing ◽  
Metal Matrix Composite Material ◽  
Impact Diamond

The article presents the results of a study of composite materials based on diamond-lonsdaleite abrasive (DLA) and various binders (Fe–Ti mechanocomposite, silicon carbide SiC). A metal-matrix composite material with a multimodal nano- and microlevel structure, characterized by increased adhesion of diamond grains to the binder, is obtained on the basis of impact diamonds and a Fe–Ti nano-mechanical composite. It is shown that the use of impact diamonds in comparison with synthetic diamonds makes it possible to reduce the pressure of thermobaric treatment by 30–50 % at the same sintering temperatures. The use of Fe–Ti–DLA composites in the process of magnetic-abrasive polishing (MAP) makes it possible to increase the removal rate of material based on silicon by 1.5–2 times and reduce the processing time by 30 % compared to ferroabrasive powder (FAP) based on synthetic diamonds. The effect of adding of silicon carbide on the process of obtaining a superhard composite material impact diamond – SiC is investigated. It is found that adding of SiC helps to reduce the defectiveness of the material and increase the homogeneity of its structure in comparison with the material without adding of a binder. In this case, an increase in the content of SiC and Si also leads to an inversion of the structure type of the superhard composite from polycrystalline to matrix. It is found that the additional use of amorphous soot and boron affects the refinement of the matrix structure of the composite material due to the formation of boron carbide and secondary finely dispersed silicon carbide.

scholarly journals A quantitative study of diffracted X-ray intensities from natural diamond crystals by using multicrystal X-ray diffractometers and comparison with silicon crystals

1987 ◽  
Vol 43 (a1) ◽  
pp. C212-C212
Author(s):  
K. Lal ◽  
S. Niranjana ◽  
N. Goswami ◽  
V. Kumar ◽  
S. K. Halder ◽  
...  
Keyword(s):  
Quantitative Study ◽  
Natural Diamond ◽  
X Ray ◽  
Silicon Crystals ◽  
Diamond Crystals
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