Materials Aspects of Diamond-Based Electronic Devices

1994 ◽  
Vol 339 ◽  
Author(s):  
J. R. Zeidler ◽  
C. A. Hewett ◽  
R. Nguyen
Keyword(s):  
Ohmic Contacts ◽  
Natural Diamond ◽  
Electronic Devices ◽  
Physical Review ◽  
Synthetic Diamonds ◽  
Current Voltage ◽  
Hall Effect Measurements ◽  
Current Voltage Characteristics ◽  
Van Der Pauw ◽  
Electronic Doping

ABSTRACTAn overview of enabling materials technologies required for fabrication of electronic devices on diamond is presented. Emphasis is placed on electronic doping of diamond by boron ion implantation. Van der Pauw resistivity and Hall Effect measurements were used to determine the net carrier concentration, carrier mobility and resistivity of natural and synthetic diamonds implanted under various conditions. The measured results for a range of implantation conditions and post-annealing temperatures are discussed in the context cf a model developed by J.F. Prins1. The requirements placed on ohmic contacts to diamond, and a process for fabricating ohmic contacts, is discussed briefly. Finally, current-voltage characteristics of a simple MISFET fabricated on ion implanted natural diamond are presented and analyzed. 1J.F. Prins, Physical Review B, 38 (1988) 5576.

Mechanisms of negative differential resistance in glutamine-functionalized WS2 quantum dots

2021 ◽  
Author(s):  
Denice Feria ◽  
Sonia Sharma ◽  
Yu-Ting Chen ◽  
Zhi-Ying Weng ◽  
Kuo-Pin Chiu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Negative Differential Resistance ◽  
Electronic Devices ◽  
Transition Metal Dichalcogenides ◽  
Differential Resistance ◽  
Voltage Range ◽  
Current Voltage ◽  
Metal Dichalcogenides ◽  
Current Voltage Characteristics ◽  
Memory Applications

Abstract Understanding the mechanism of the negative differential resistance (NDR) in transition metal dichalcogenides is essential for fundamental science and the development of electronic devices. Here, the NDR of the current-voltage characteristics was observed based on the glutamine-functionalized WS2 quantum dots (QDs). The NDR effect can be adjusted by varying the applied voltage range, air pressure, surrounding gases, and relative humidity. A peak-to-valley current ratio as high as 6.3 has been achieved at room temperature. Carrier trapping induced by water molecules was suggested to be responsible for the mechanism of the NDR in the glutamine-functionalized WS2 QDs. Investigating the NDR of WS2 QDs may promote the development of memory applications and emerging devices.

ON THE DRAIN CURRENT SATURATION IN CARBON NANOTUBE FIELD EFFECT TRANSISTORS

NANO ◽  
2010 ◽  
Vol 05 (03) ◽  
pp. 161-165 ◽  
Author(s):  
A. BENFDILA ◽  
S. ABBAS ◽  
R. IZQUIERDO ◽  
R. TALMAT ◽  
A. VASEASHTA
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Electronic Devices ◽  
Ballistic Transport ◽  
Drain Current ◽  
Functional Behavior ◽  
Current Saturation ◽  
Current Voltage ◽  
Saturation Region ◽  
Current Voltage Characteristics

Electronic devices based on carbon nanotubes (CNTs) show potential for circuit miniaturization due to their superior electrical characteristics and reduced dimensionality. The CNT field effect transistors (CNFETs) offer breakthrough in miniaturization of various electronic circuits. Investigation of ballistic transport governing the operation of CNFETs is essential for understanding the device's functional behavior. This investigation is focused on a study of current–voltage characteristics of device behavior in hard saturation region. The investigation utilizes a set of current–voltage characteristics obtained on typical devices. This work is an extension of our earlier work describing application of our approach to Si -MOSFET behavior in the saturation region.

Study of Ohmic Contacts on P-Type ZnSe and ZnSe Epitaxial Layers Grown by Molecular Beam Epitaxy

1992 ◽  
Vol 281 ◽  
Author(s):  
C. Piskoti ◽  
B. Mykolajenko ◽  
M. Vaziri
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Molecular Beam ◽  
Metal Contact ◽  
Epitaxial Layers ◽  
Preliminary Results ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

ABSTRACTTo study the formation of ohmic contacts, several metals have been deposited on p-types ZnTe and ZnSe epitaxial layers. The metals were deposited on the layers either by simple evaporation or by electroplating. The current-voltage characteristics associated with each metal contact were measured. The preliminary results of these measurements indicate that electroplating is a better technique for making ohmic contact to these layers.

Current–Voltage Characteristics of Porous Silicon Made from A P/N Junction Structure

1991 ◽  
Vol 256 ◽  
Author(s):  
Y. J. Hsu ◽  
L. K. Samanta ◽  
K. C. Wang ◽  
P. C. Chen ◽  
H. L. Hwang
Keyword(s):  
Carrier Transport ◽  
Ohmic Contacts ◽  
Electrochemical Etching ◽  
Porous Si ◽  
Direction Parallel ◽  
Sudden Rise ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Junction Structure ◽  
Electrical Data

ABSTRACTWe have made studies on the TRANSVERSE transport properties of the porous Si made from a novel P/N junction structure. The structures of porous Si were examined for various electrochemical etching conditions and they were correlated with the electrical data. The junciton was fabricated by shallow diffusion, with porous Si formed perpendicular to the junction and between two indium ohmic contacts. This structure confines currents to the direction parallel to the surface. Distinct feature on I–V curves have been observed, including sudden rise of currents and the existence of negative differential resistances (NDR). The characteristics appeared stable and depended on the polarity of bias. Suggestions are made that the porous Si could be composed of microcrystals, and feasibility of carrier transport through quantum boxes responsible for the electrical behaviors are discussed.

Non Alloyed Ohmic Contacts for GaAs Coplanar Mixer Diodes

1981 ◽  
Vol 4 ◽  
Author(s):  
John M. Woodcock
Keyword(s):  
Ohmic Contacts ◽  
Laser Annealing ◽  
Matched Pairs ◽  
Conversion Loss ◽  
Fin Line ◽  
Current Voltage ◽  
Specific Contact ◽  
Heavily Doped ◽  
Current Voltage Characteristics ◽  
Balanced Mixer

ABSTRACTA Q-switched ruby laser has been used to anneal gallium arsenide which has either been implanted with a donor or coated with a thin layer of material containing the donor. Silicon nitride (∼500Å), germanium (∼50Å), tin (∼50Å) and silicon (∼500Å) have been used and in all cases laser annealing produces n-type doping levels in excess of 1019cm−3. Non alloyed ohmic contacts have been made on these heavily doped layers with specific contact resistances as low as 1.4 × 10−6Ω cm2. These contacts have been used in the fabrication of fine geometry coplanar mixer diodes. Ideality factors of 1.1 have been measured from the d.c. current voltage characteristics and diodes with a total capacitance of O.03pF have series resistances below 10 ohms. Matched pairs of these devices have given a 4.8dB conversion loss at 35GHz in a fin line balanced mixer.

Formation of ultra-shallow Ohmic contacts on n-Ge by Sb delta-doping

2011 ◽  
Vol 1305 ◽  
Author(s):  
K. Sawano ◽  
Y. Hoshi ◽  
K. Kasahara ◽  
K. Yamane ◽  
K. Hamaya ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Ohmic Contacts ◽  
Doping Profile ◽  
Nanometer Scale ◽  
Shallow Junction ◽  
Low Resistivity ◽  
Current Voltage ◽  
Delta Doping ◽  
Current Voltage Characteristics

ABSTRACTWe demonstrate low-resistivity Ohmic contacts for n-Ge with ultra-shallow junction. Using the impurity δ-doping techniques with Ge homoepitaxy on Ge(111) below 400 ºC, we can achieve a very abrupt doping profile within a nanometer-scale width. By introducing the δ-doping to atomically controlled metal/Ge contacts, the current-voltage characteristics clearly show Ohmic conductions owing to the effective tunneling through the Schottky barrier. This approach is promising for a formation technology of ultra-shallow source/drain contacts for scaled Ge devices.

Electrical Properties of Graphene Oxide Layers Prepared by Material Inkjet Printing

2016 ◽  
Vol 674 ◽  
pp. 109-114 ◽  
Author(s):  
Jan Pospisil ◽  
Veronika Schmiedova ◽  
Oldrich Zmeskal ◽  
Viliam Vretenar ◽  
Peter Kotrusz
Keyword(s):  
Electrical Conductivity ◽  
Graphene Oxide ◽  
Electrical Properties ◽  
Inkjet Printing ◽  
Room Temperature ◽  
Electronic Devices ◽  
Dielectric Measurements ◽  
Current Voltage ◽  
Bulk Electrical Conductivity ◽  
Current Voltage Characteristics

The paper deals with the study of optical and electrical properties of inkjet-printed graphene oxide (GO) layers, which can be used e.g. for the preparation of various types of electronic devices. To ensure stable inkjet printing conditions of GO solution, mixture was thoroughly stirred for 1 h at room temperature or sonicated in the bath for 30 min. The thicknesses of prepared layers were determined by spectroscopic ellipsometry and profilometry. An electrical conductivity of GO was increased by the multistep reduction (due to annealing) – the conductivity was changed by these processes about seven orders of magnitude (GO is an isolator and reduced GO is a conductor). For electrical and dielectric measurements, samples with GO and mixture of GO with PEDOT were prepared. All current-voltage characteristics have a diode character. From AC measurements the bulk electrical conductivity and geometric capacity of prepared layers were determined.

Investigation of the Electrical Resistivity of 20μm-Gap Gold-DNA-Gold Structure: Exploiting the Current-Voltage Characteristics under a Variable External Magnetic Field

2014 ◽  
Vol 554 ◽  
pp. 155-159 ◽  
Author(s):  
Nadia Mahmoudi Khatir ◽  
Zulkurnain Abdul-Malek ◽  
Seyedeh Maryam Banihashemian
Keyword(s):  
Magnetic Field ◽  
Electrical Resistivity ◽  
External Magnetic Field ◽  
Molecular Electronics ◽  
Electronic Devices ◽  
Charge Carriers ◽  
Current Voltage ◽  
Dna Strands ◽  
Pcr Method ◽  
Current Voltage Characteristics

Deoxyribonucleic acid (DNA), as the most important molecule in nature, holds promise as a key element of the molecular electronics as its utilization in the synthesis of electronic devices such as micro and nanosensors has increased remarkably during the recent years. Our work is devoted to an experimental study of the electrical resistivity of a gold-DNA-gold (GDG) structure in the presence of a variable external magnetic field. The DNA strands, extracted by the PCR method, were used to fabricate the GDG structures. The resistivity of the structure was found to rise sharply with the magnitude of the exerted magnetic field due to onset and progression of the cyclotron effects in charge carriers. Such a distinct current-voltage signature can possibly be employed for realization of an accurate magnetic sensor.

scholarly journals Wavelength dependent photosensitivity modulation of Aluminium/Lead sulphide/Indium tin oxide back-to-back diode

2020 ◽  
Vol 22 ◽  
pp. 1-7
Author(s):  
Abhijit Banerjee ◽  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Electronic Devices ◽  
Lead Sulphide ◽  
Carrier Generation ◽  
Current Voltage ◽  
Photo Sensor ◽  
Capacitance Voltage ◽  
Definite Improvement ◽  
Current Voltage Characteristics

The photosensitivity of aluminium (Al)/lead sulphide (PbS)/indium tin oxide (ITO) thin layered structure is investigated considering the photon wavelength dependent current-voltage and capacitance-voltage characteristics of the device. The current-voltage characteristics of the test structure are analyzed adopting the back-to-back Schottky barrier diode model. The diode possesses low dark current in contrast to the high value of photocurrents measured under different illumination wavelengths. The change in photocurrents with different illumination wavelengths clearly indicates the change in photo-sensitivity of the device. The capacitance-voltage characteristics of Al/PbS/ITO structure demonstrate a definite improvement of the device capacitance with the higher wavelength exposures. The matter is explained in terms of the additional capacitance owing to the excess carrier generation within the device under illumination. The photosensitivity modulation of the device can be exploited in photo-sensor or photo-detector applications in various electronic devices.

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