Wafer-scale single-orientation 2D layers by atomic edge-guided epitaxial growth

2022 ◽  
Author(s):  
Yi Wan ◽  
Jui-Han Fu ◽  
Chih-Piao Chuu ◽  
Vincent Tung ◽  
Yumeng Shi ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Critical Factors ◽  
Wafer Scale ◽  
Crystal Substrate ◽  
Energy Consideration ◽  
Single Orientation

We provide a systematic summary of the critical factors—including crystal/substrate symmetry and energy consideration—necessary for synthesizing single-orientation 2D layers.

scholarly journals Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 788
Author(s):  
Jian-Huan Wang ◽  
Ting Wang ◽  
Jian-Jun Zhang
Keyword(s):  
Electron Microscopy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Core Shell ◽  
High Quality ◽  
Quantum Devices ◽  
Wafer Scale ◽  
Transmission Electron ◽  
Controllable Growth

Controllable growth of wafer-scale in-plane nanowires (NWs) is a prerequisite for achieving addressable and scalable NW-based quantum devices. Here, by introducing molecular beam epitaxy on patterned Si structures, we demonstrate the wafer-scale epitaxial growth of site-controlled in-plane Si, SiGe, and Ge/Si core/shell NW arrays on Si (001) substrate. The epitaxially grown Si, SiGe, and Ge/Si core/shell NW are highly homogeneous with well-defined facets. Suspended Si NWs with four {111} facets and a side width of about 25 nm are observed. Characterizations including high resolution transmission electron microscopy (HRTEM) confirm the high quality of these epitaxial NWs.

Wafer-Scale and Wrinkle-Free Epitaxial Growth of Single-Orientated Multilayer Hexagonal Boron Nitride on Sapphire

Nano Letters ◽  
2016 ◽  
Vol 16 (5) ◽  
pp. 3360-3366 ◽  
Author(s):  
A-Rang Jang ◽  
Seokmo Hong ◽  
Chohee Hyun ◽  
Seong In Yoon ◽  
Gwangwoo Kim ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Epitaxial Growth ◽  
Hexagonal Boron Nitride ◽  
Wafer Scale

scholarly journals Образование полуполярных III-нитридных слоев на поверхности Si(100), структурированной с помощью самоформирующейся наномаски

2021 ◽  
Vol 55 (4) ◽  
pp. 356
Author(s):  
В.Н. Бессолов ◽  
Е.В. Коненкова ◽  
С.Н. Родин ◽  
Д.С. Кибалов ◽  
В.К. Смирнов
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
Silicon Surface ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Symmetric State ◽  
Corrugated Surface ◽  
Element Size ◽  
Initial Stage ◽  
Semipolar Gan ◽  
Single Orientation

The epitaxial growth of AlN and GaN layers was studied by Metalorganic Vapor Phase Epitaxy, on a Si(100) substrate, on the surface of which a V-shaped nanostructure with sub-100 nm element size (NP-Si(100)) was formed. It is shown that a corrugated surface is formed from semipolar AlN(10-11) planes with opposite "c"axes during the formation of a semipolar AlN layer at the initial stage of epitaxy. Then, during the growth of the GaN layer, the transition from the symmetric state of two semipolar AlN planes to an asymmetric state with a single orientation of the "c"-axis of the semipolar GaN(10-11) layer occurs, and the "c" direction in the growing semipolar layer coincides with the direction of the flow of N2+ ions to the silicon surface during the formation of a nanomask.

scholarly journals Wafer-scale, epitaxial growth of single layer hexagonal boron nitride on Pt(111)

2021 ◽  
Author(s):  
Adrian Hemmi ◽  
Huanyao Cun ◽  
Steven Brems ◽  
Cedric Huyghebaert ◽  
Thomas Greber
Keyword(s):  
Boron Nitride ◽  
Epitaxial Growth ◽  
Hexagonal Boron Nitride ◽  
Single Layer ◽  
Wafer Scale

Dual-coupling-guided epitaxial growth of wafer-scale single-crystal WS2 monolayer on vicinal a-plane sapphire

2021 ◽  
Author(s):  
Jinhuan Wang ◽  
Xiaozhi Xu ◽  
Ting Cheng ◽  
Lehua Gu ◽  
Ruixi Qiao ◽  
...  
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Wafer Scale ◽  
Ws2 Monolayer

Crystallinity Evaluation and Dislocation Observation for an Aluminum Nitride Single-Crystal Substrate on a Wafer Scale

2020 ◽  
Vol 49 (9) ◽  
pp. 5144-5153
Author(s):  
Yongzhao Yao ◽  
Yoshihiro Sugawara ◽  
Yukari Ishikawa ◽  
Narihito Okada ◽  
Kazuyuki Tadatomo
Keyword(s):  
Aluminum Nitride ◽  
Single Crystal ◽  
Single Crystal Substrate ◽  
Wafer Scale ◽  
Crystal Substrate

Epitaxial Growth of NiSi2 on (111)Si Inside 0.1-0.6 μM in Size Oxide Openings Prepared by Electron Beam Lithography

1996 ◽  
Vol 427 ◽  
Author(s):  
J. Y. Yew ◽  
L. J. Chen ◽  
K. Nakamura
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Epitaxial Growth ◽  
Electron Beam Lithography ◽  
Stress Measurement ◽  
Deep Submicron ◽  
Film Stress ◽  
Size And Shape ◽  
Thin Film Stress ◽  
Single Orientation

AbstractEpitaxial growth of NiSi2 on (111)Si inside 0.1-0.6 4m in size oxide openings prepared by electron beam lithography has been studied by field emission scanning electron microscopy, transmission electron microscopy and thin film stress measurement. Striking effects of size and shape of deep submicron oxide openings on the growth of NiSi2 epitaxy were observed. Epitaxial growth of NiSi2 of single orientation on (111)Si was found to occur at a temperature as low as 400 °C inside both contact holes and linear openings of 0.3. μm or smaller in size. Contact holes were found to be more effective in inducing the epitaxial growth of NiSi2 of single orientation than that of linear openings of the same size. The effects of size and shape of lateral confinement on the epitaxial growth of NiSi2 on (111)Si are correlated with the stress level inside oxide openings.

Epitaxial growth of sol-gel derived BiScO3–PbTiO3 thin film on Nb-doped SrTiO3 single crystal substrate

2007 ◽  
Vol 90 (20) ◽  
pp. 202902 ◽  
Author(s):  
Hai Wen ◽  
Xiaohui Wang ◽  
Caifu Zhong ◽  
Like Shu ◽  
Longtu Li
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Sol Gel ◽  
Single Crystal Substrate ◽  
Pbtio3 Thin Film ◽  
Crystal Substrate
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