Dual-coupling-guided epitaxial growth of wafer-scale single-crystal WS2 monolayer on vicinal a-plane sapphire

2021 ◽  
Author(s):  
Jinhuan Wang ◽  
Xiaozhi Xu ◽  
Ting Cheng ◽  
Lehua Gu ◽  
Ruixi Qiao ◽  
...  
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Wafer Scale ◽  
Ws2 Monolayer

Epitaxial Growth of Wafer Scale Antioxidant Single-crystal Graphene on Twinned Pt(111)

Carbon ◽  
2021 ◽  
Author(s):  
He Kang ◽  
Pengtao Tang ◽  
Haibo Shu ◽  
Yanhui Zhang ◽  
Yijian Liang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Wafer Scale

scholarly journals Corrigendum to “Epitaxial growth of wafer scale antioxidant single-crystal graphene on twinnedPt(111)” [Carbon 181 (2021) 225-233]

Carbon ◽  
2021 ◽  
Author(s):  
He Kang ◽  
Pengtao Tang ◽  
Haibo Shu ◽  
Yanhui Zhang ◽  
Yijian Liang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Wafer Scale

scholarly journals Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 788
Author(s):  
Jian-Huan Wang ◽  
Ting Wang ◽  
Jian-Jun Zhang
Keyword(s):  
Electron Microscopy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Core Shell ◽  
High Quality ◽  
Quantum Devices ◽  
Wafer Scale ◽  
Transmission Electron ◽  
Controllable Growth

Controllable growth of wafer-scale in-plane nanowires (NWs) is a prerequisite for achieving addressable and scalable NW-based quantum devices. Here, by introducing molecular beam epitaxy on patterned Si structures, we demonstrate the wafer-scale epitaxial growth of site-controlled in-plane Si, SiGe, and Ge/Si core/shell NW arrays on Si (001) substrate. The epitaxially grown Si, SiGe, and Ge/Si core/shell NW are highly homogeneous with well-defined facets. Suspended Si NWs with four {111} facets and a side width of about 25 nm are observed. Characterizations including high resolution transmission electron microscopy (HRTEM) confirm the high quality of these epitaxial NWs.

Robust Nanocapacitors Based on Wafer-Scale Single-Crystal Hexagonal Boron Nitride Monolayer Films

2021 ◽  
Author(s):  
Yanwei He ◽  
Yuan Li ◽  
Miguel Isarraraz ◽  
Pedro Pena ◽  
Jason Tran ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Single Crystal ◽  
Hexagonal Boron Nitride ◽  
Monolayer Films ◽  
Wafer Scale

scholarly journals Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111)

Nature ◽  
2020 ◽  
Vol 579 (7798) ◽  
pp. 219-223 ◽  
Author(s):  
Tse-An Chen ◽  
Chih-Piao Chuu ◽  
Chien-Chih Tseng ◽  
Chao-Kai Wen ◽  
H.-S. Philip Wong ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Single Crystal ◽  
Hexagonal Boron Nitride ◽  
Wafer Scale

Oxide Mediated Epitaxial Growth of CoSi2 in a Single Deposition Step

1999 ◽  
Vol 564 ◽  
Author(s):  
S. Ohmi ◽  
R. T. Tung
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Diffusion Barrier ◽  
Blocking Layer ◽  
Deposition Step

AbstractA number of modifications of the oxide-mediated epitaxy (OME) technique are presented which have enabled the growth of thick (∼25–40nm) epitaxial CoSi2 layers in a single deposition sequence. The uses of (a) a thin Ti cap, (b) a thin Ti blocking layer, (c) the codeposition of Co-rich CoSix, and (d) the co-deposition of Col−xTix. have all been shown to lead to improved epitaxial quality over the pure Co OME process, for Co thickness greater than 6nm. Essentially uniform, single crystal silicide layers of over 25nm have been grown in a single deposition step. These results are supportive of the proposed role of a diffusion barrier/kinetics retarder on the part of the interlayer in the OME and the Ti-interlayer mediated epitaxy processes.

MOCVD epitaxial growth of single crystal GaN, AlN and AlxGa1-xN

1985 ◽  
Vol 14 (5) ◽  
pp. 633-644 ◽  
Author(s):  
M. Matloubian ◽  
M. Gershenzon
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth

scholarly journals Epitaxial Growth of Co Thin Films on SrTiO3 Single-Crystal Substrates

2010 ◽  
Vol 34 (2) ◽  
pp. 78-91 ◽  
Author(s):  
O. Yabuhara ◽  
Y. Nukaga ◽  
M. Ohtake ◽  
F. Kirino ◽  
M. Futamoto
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Epitaxial Growth
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