Thermal atomic layer deposition of rhenium nitride and rhenium metal thin films using methyltrioxorhenium

2021 ◽  
Author(s):  
Stefan Cwik ◽  
Keenan N. Woods ◽  
S. Sameera Perera ◽  
Mark J. Saly ◽  
Thomas J. Knisley ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Metal Thin Films ◽  
Layer Deposition

The growth of rhenium nitride and rhenium metal thin films is presented using atomic layer deposition (ALD) with the precursors methyltrioxorhenium and 1,1-dimethylhydrazine. Saturative, self-limiting growth was determined at 340...

Low Temperature, Selective Atomic Layer Deposition of Nickel Metal Thin Films

2018 ◽  
Vol 10 (16) ◽  
pp. 14200-14208 ◽  
Author(s):  
Marissa M. Kerrigan ◽  
Joseph P. Klesko ◽  
Kyle J. Blakeney ◽  
Charles H. Winter
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Nickel Metal ◽  
Metal Thin Films ◽  
Layer Deposition

scholarly journals Thermal atomic layer deposition of ruthenium metal thin films using nonoxidative coreactants

2020 ◽  
Vol 38 (1) ◽  
pp. 012402
Author(s):  
Stefan Cwik ◽  
Keenan N. Woods ◽  
Mark J. Saly ◽  
Thomas J. Knisley ◽  
Charles H. Winter
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Metal Thin Films ◽  
Layer Deposition

Low-Temperature Atomic Layer Deposition of Copper Metal Thin Films: Self-Limiting Surface Reaction of Copper Dimethylamino-2-propoxide with Diethylzinc

2009 ◽  
Vol 121 (25) ◽  
pp. 4606-4609 ◽  
Author(s):  
Byoung H. Lee ◽  
Jae K. Hwang ◽  
Jae W. Nam ◽  
Song U. Lee ◽  
Jun T. Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Surface Reaction ◽  
Atomic Layer ◽  
Copper Metal ◽  
Metal Thin Films ◽  
Layer Deposition ◽  
Limiting Surface

scholarly journals Diamine Adduct of Cobalt(II) Chloride as a Precursor for Atomic Layer Deposition of Stoichiometric Cobalt(II) Oxide and Reduction Thereof to Cobalt Metal Thin Films

2018 ◽  
Vol 30 (10) ◽  
pp. 3499-3507 ◽  
Author(s):  
Katja Väyrynen ◽  
Timo Hatanpää ◽  
Miika Mattinen ◽  
Mikko Heikkilä ◽  
Kenichiro Mizohata ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Cobalt Metal ◽  
Metal Thin Films ◽  
Layer Deposition

Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Electric Properties ◽  
X Ray Diffraction ◽  
Layer Deposition ◽  
Azo Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

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