Conflux of tunable Rashba effect and piezoelectricity in flexible magnesium monochalcogenide monolayers for next-generation spintronic devices

Nanoscale ◽  
2021 ◽  
Author(s):  
Manish Kumar Mohanta ◽  
Anu Arora ◽  
Abir De Sarkar

Intertwining of Rashba and piezoelectric effects in MgX monolayers for next generation self-powered flexible spintronic devices.

SPIN ◽  
2017 ◽  
Vol 07 (03) ◽  
pp. 1740014 ◽  
Author(s):  
Cormac Ó Coileáin ◽  
Han Chun Wu

From historical obscurity, antiferromagnets are recently enjoying revived interest, as antiferromagnetic (AFM) materials may allow the continued reduction in size of spintronic devices. They have the benefit of being insensitive to parasitic external magnetic fields, while displaying high read/write speeds, and thus poised to become an integral part of the next generation of logical devices and memory. They are currently employed to preserve the magnetoresistive qualities of some ferromagnetic based giant or tunnel magnetoresistance systems. However, the question remains how the magnetic states of an antiferromagnet can be efficiently manipulated and detected. Here, we reflect on AFM materials for their use in spintronics, in particular, newly recognized antiferromagnet Mn2Au with its in-plane anisotropy and tetragonal structure and high Néel temperature. These attributes make it one of the most promising candidates for AFM spintronics thus far with the possibility of architectures freed from the need for ferromagnetic (FM) elements. Here, we discuss its potential for use in ferromagnet-free spintronic devices.


Author(s):  
Huan Chen ◽  
Jintao Jiang ◽  
Zhe Chen ◽  
Binjie Du ◽  
Chenghao Dai ◽  
...  

New self-powered hydrogels that reversibly change electrical signals in response to circumambient multistimuli are of interest for the development of the next-generation smart sensing devices. In this work, a new...


Author(s):  
Yanxia Wang ◽  
Xue Jiang ◽  
Yi Wang ◽  
Jijun Zhao

Exploring two-dimensional (2D) ferromagnetic materials with intrinsic Dirac half-metallicity is crucial for the development of next-generation spintronic devices. Based on first-principles calculations, here we propose a simple valence electron-counting rule...


2020 ◽  
Vol 8 (27) ◽  
pp. 13619-13629 ◽  
Author(s):  
Asif Abdullah Khan ◽  
Md Masud Rana ◽  
Guangguang Huang ◽  
Nanqin Mei ◽  
Resul Saritas ◽  
...  

A high-performance perovskite/polymer piezoelectric nanogenerator for next generation self-powered wireless micro/nanodevices.


Author(s):  
Lijuan Huang ◽  
Zhengrui Hu ◽  
Hong Zhang ◽  
Yuanqiang Xiong ◽  
Shiqiang Fan ◽  
...  

Gallium oxide (Ga2O3) has been extensively studied in recent years because it is a natural candidate material for next-generation solar-blind deep ultraviolet photodetectors (PDs). Herein, a three dimensional (3D) amorphous...


Nanoscale ◽  
2018 ◽  
Vol 10 (23) ◽  
pp. 11186-11195 ◽  
Author(s):  
C. H. Wong ◽  
E. A. Buntov ◽  
A. F. Zatsepin ◽  
J. Lyu ◽  
R. Lortz ◽  
...  

The study of magnetism without the involvement of transition metals or rare earth ions is considered the key to the fabrication of next-generation spintronic devices.


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