Benchmarking atomically defined AFM tips for chemical-selective imaging

Nanoscale ◽  
2021 ◽  
Author(s):  
Bertram Schulze Lammers ◽  
Damla Yesilpinar ◽  
Alexander Timmer ◽  
Zhixin Hu ◽  
Wei Ji ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Low Temperature ◽  
Surface Chemistry ◽  
Performance Assessment ◽  
Force Microscopy ◽  
Atomic Force ◽  
Afm Tips

Controlling the identity of the tip-terminating atom or molecule in low-temperature atomic force microscopy has led to ground breaking progress in surface chemistry and nanotechnology. Lacking a comparative tip-performance assessment,...

scholarly journals 3D-printed cellular tips for tuning fork atomic force microscopy in shear mode

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Liangdong Sun ◽  
Hongcheng Gu ◽  
Xiaojiang Liu ◽  
Haibin Ni ◽  
Qiwei Li ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Shear Mode ◽  
Unique Contribution ◽  
Force Microscopy ◽  
Atomic Force ◽  
Afm Tips ◽  
3D Printed ◽  
Architectured Material ◽  
Energy Absorbing ◽  
Absorption Field

AbstractConventional atomic force microscopy (AFM) tips have remained largely unchanged in nanomachining processes, constituent materials, and microstructural constructions for decades, which limits the measurement performance based on force-sensing feedbacks. In order to save the scanning images from distortions due to excessive mechanical interactions in the intermittent shear-mode contact between scanning tips and sample, we propose the application of controlled microstructural architectured material to construct AFM tips by exploiting material-related energy-absorbing behavior in response to the tip–sample impact, leading to visual promotions of imaging quality. Evidenced by numerical analysis of compressive responses and practical scanning tests on various samples, the essential scanning functionality and the unique contribution of the cellular buffer layer to imaging optimization are strongly proved. This approach opens new avenues towards the specific applications of cellular solids in the energy-absorption field and sheds light on novel AFM studies based on 3D-printed tips possessing exotic properties.

Low temperature corneal laser welding investigated by atomic force microscopy

2009 ◽  
Author(s):  
Paolo Matteini ◽  
Francesca Sbrana ◽  
Bruno Tiribilli ◽  
Roberto Pini
Keyword(s):  
Atomic Force Microscopy ◽  
Low Temperature ◽  
Laser Welding ◽  
Force Microscopy ◽  
Atomic Force

Role of Oxide Surface Chemistry and Phospholipid Phase on Adsorption and Self-Assembly: Isotherms and Atomic Force Microscopy

2009 ◽  
Vol 113 (6) ◽  
pp. 2187-2196 ◽  
Author(s):  
Jie Xu ◽  
Mark J. Stevens ◽  
Timothy A. Oleson ◽  
Julie A. Last ◽  
Nita Sahai
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Chemistry ◽  
Self Assembly ◽  
Oxide Surface ◽  
Force Microscopy ◽  
Atomic Force

Morphology of Low Temperature Carbon Films Prepared by VHF CVD: Correlation with Field Emission

1998 ◽  
Vol 509 ◽  
Author(s):  
A.N. Titkov ◽  
A.I. Kosarev ◽  
A.J. Vinogradov ◽  
Z. Waqar ◽  
I.V. Makarenko ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Low Temperature ◽  
Field Emission ◽  
Significant Influence ◽  
Substrate Surface ◽  
Carbon Films ◽  
Emission Characteristics ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Parameters

AbstractThe effect of deposition parameters and substrate on the morphology of carbon films prepared in VHF plasma at low temperature has been studied by Atomic Force Microscopy. Carbon films demonstrating superior emission characteristics were the smoothest, but not all of the smoothest films demonstrated good emission. Significant influence of pre-growth treatment of the substrate surface on the emission characteristics of the films was found.

scholarly journals Growth and Characterizations of Mg-doped GaAs Films

2020 ◽  
Author(s):  
Dong Fong
Keyword(s):  
Atomic Force Microscopy ◽  
Low Temperature ◽  
Surface Morphology ◽  
Force Microscopy ◽  
Atomic Force ◽  
Gaas Films ◽  
Growth Method ◽  
P Type ◽  
Low Temperature Photoluminescence ◽  
Mg Doped

The short research of optimization of the growth method to obtain p-type GaAs (001) layers using Si as the dopant was reported in this work. Atomic force microscopy was used to analyze the surface morphology and low-temperature photoluminescence also used to confirm the p-type of the layers.

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