Formation mechanism of Ruddlesden-Popper faults in compressive-strained ABO3 perovskite superlattices

Nanoscale ◽

10.1039/d1nr06830j ◽

2021 ◽

Author(s):

Haoyuan Qi ◽

Xiaodan Chen ◽

Meng Wu ◽

Eva Benckise ◽

Gennady Logvenov ◽

...

Keyword(s):

Thin Films ◽

Formation Mechanism ◽

Defect Engineering ◽

Promising Candidate ◽

Abo3 Perovskite

Ruddlesden-Popper (RP) faults have emerged as a promising candidate for defect engineering in epitaxial ABO3 perovskites. Functionalities could be fine-tuned by incorporating RP faults into ABO3 thin films and superlattices....

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Investigation on formation mechanism of MOD derived PLT ferroelectric thin films

Ferroelectrics ◽

10.1080/00150199908015785 ◽

1999 ◽

Vol 232 (1) ◽

pp. 147-152

Author(s):

Wu Xiaoqing ◽

Ren Wei ◽

Zhang Liangying ◽

Yao Xi

Keyword(s):

Thin Films ◽

Formation Mechanism ◽

Ferroelectric Thin Films

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Self-polarized piezoelectric thin films: preparation, formation mechanism and application

Journal of Materials Chemistry C ◽

10.1039/c5tc01869b ◽

2015 ◽

Vol 3 (34) ◽

pp. 8926-8931 ◽

Cited By ~ 16

Author(s):

Baozhang Li ◽

Chengyi Xu ◽

Feifei Zhang ◽

Jianming Zheng ◽

Chunye Xu

Keyword(s):

Thin Films ◽

Energy Harvesting ◽

Formation Mechanism ◽

Pressure Sensor ◽

Salt Solution ◽

Pvdf Film ◽

Piezoelectric Thin Films

A PVDF film prepared on a salt solution is discovered to be self-polarized and is successfully applied in energy harvesting and pressure sensor.

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Role of cation diffusion in the formation mechanism and properties of cobalt-doped n-type pyrite thin films

Journal of Materials Science ◽

10.1007/s10853-013-7272-2 ◽

2013 ◽

Vol 48 (14) ◽

pp. 4914-4924 ◽

Cited By ~ 7

Author(s):

P. Díaz-Chao ◽

J. R. Ares ◽

I. J. Ferrer ◽

C. Sánchez

Keyword(s):

Thin Films ◽

Formation Mechanism ◽

Cation Diffusion

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Optical properties and formation mechanism of M1-phase VO 2 thin films annealed in a closed NH 3 atmosphere

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2017.02.151 ◽

2017 ◽

Vol 706 ◽

pp. 289-296 ◽

Cited By ~ 14

Author(s):

Meinan Wan ◽

Baoshun Liu ◽

Shuo Wang ◽

Lingting Hu ◽

Youjia He ◽

...

Keyword(s):

Thin Films ◽

Optical Properties ◽

Formation Mechanism ◽

M1 Phase

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Formation mechanism of Ruddlesden-Popper-type antiphase boundaries during the kinetically limited growth of Sr rich SrTiO3 thin films

Scientific Reports ◽

10.1038/srep38296 ◽

2016 ◽

Vol 6 (1) ◽

Cited By ~ 16

Author(s):

Chencheng Xu ◽

Hongchu Du ◽

Alexander J. H. van der Torren ◽

Jan Aarts ◽

Chun-Lin Jia ◽

...

Keyword(s):

Thin Films ◽

Formation Mechanism ◽

Limited Growth ◽

Antiphase Boundaries

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A novel two-step strategy to fabricate phase-pure SnS photoelectrode with tunable conductivity: formation mechanism and photoelectrochemical properties

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/ac472e ◽

2021 ◽

Author(s):

Wenwan Zhang ◽

Yufei Cheng ◽

Junfeng Zhao ◽

Qiujie Li ◽

Jiawei Wang ◽

...

Keyword(s):

Thin Films ◽

Formation Mechanism ◽

Photocurrent Density ◽

Photoelectrochemical Properties ◽

Secondary Phases ◽

Injection Efficiency ◽

Conductivity Type ◽

Phase Pure ◽

Sns Thin Films ◽

Foil Substrate

Abstract Tin monosulfide (SnS), as a narrow band gap semiconductor for visible-light harvesting, nevertheless the easy formation of secondary phases such as Sn2S3 and SnS2 severely restricts its photoelectrochemical properties. Herein, we proposed a novel two-step strategy to fabricate phase-pure SnS photoelectrode with tunable conductivity on Ti foil substrate and carefully investigated the formation mechanism and photoelectrochemical properties. The tunable conductivity is determined by Na2SO4 pretreatment before annealing, which is supported by the EDS, XPS, and EPR characterizations. Na+ adsorbed to the edge of the precursor SnS2 nanosheets forming a dangling bond adsorption will protect S2- against reacting with the trace oxygen in the CVD system within a certain temperature range (< 525 ℃), thereby reducing the generation of S vacancies to adjust the S/Sn ratio and further regulating the conductivity type. Moreover, the anodic photocurrent density of SnS thin films was about 0.32 mA/cm2 at 1.23 V vs. RHE with the separation and injection efficiency of 1.22 % and 72.78 % and a maximum cathodic photocurrent density can reach approximately -0.36 mA/cm2 at 0 V vs. RHE with the separation and injection efficiency 1.15 % and 5.44 % respectively. The method shown in this work provides an effective approach to control the electrical conductivity of SnS thin films with considerable photocurrent response for phase-pure SnS.

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