Quantum-sized silicon for enhanced photoluminescence and optical nonlinearity

2021 ◽  
Author(s):  
Zhexue Chen ◽  
Weibiao Wang ◽  
Xinyu Sui ◽  
Kangkang Wang ◽  
Jianqi Zhang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Nonlinearity ◽  
Nonlinear Saturation ◽  
Enhanced Photoluminescence ◽  
Saturation Absorption ◽  
Si Quantum Dots

Si quantum dots (SiQDs) with intrinsic characteristics demonstrate significantly enhanced photoluminescence (PL) and nonlinear saturation absorption (NSA) performances.

Enriching Si quantum dots in a Si-rich SiNxmatrix for strong χ(3)optical nonlinearity

2016 ◽  
Vol 4 (7) ◽  
pp. 1405-1413 ◽  
Author(s):  
Chung-Lun Wu ◽  
Yung-Hsiang Lin ◽  
Chih-Hsien Cheng ◽  
Sheng-Pin Su ◽  
Bo-Ji Huang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Stoichiometric Composition ◽  
Optical Nonlinearity ◽  
Si Content ◽  
Si Quantum Dots

The optical nonlinearity of dense Si quantum dots doped SiNxmatrix enhanced by three orders of magnitude larger than that of stoichiometric Si3N4is demonstratedviadetuning the excessive Si content from stoichiometric composition.

scholarly journals On the energetic origin of self-limiting trenches formed around Ge∕Si quantum dots

2004 ◽  
Vol 85 (9) ◽  
pp. 1586-1588 ◽  
Author(s):  
D. T. Tambe ◽  
V. B. Shenoy
Keyword(s):  
Quantum Dots ◽  
Si Quantum Dots

Modulation of the photoluminescence of Si quantum dots by means of CO2 laser pre-annealing

2010 ◽  
Vol 256 (16) ◽  
pp. 5116-5119 ◽  
Author(s):  
Yong-bin Chen ◽  
Yong Ren ◽  
Rong-ling Xiong ◽  
You-yuan Zhao ◽  
Ming Lu
Keyword(s):  
Quantum Dots ◽  
Co2 Laser ◽  
Si Quantum Dots

SPACE-CHARGE SPECTROSCOPY OF ELECTRONIC STATES IN Ge/Si QUANTUM DOTS WITH TYPE-II BAND ALIGNMENT

2007 ◽  
Vol 06 (05) ◽  
pp. 353-356
Author(s):  
A. I. YAKIMOV ◽  
A. V. DVURECHENSKII ◽  
A. I. NIKIFOROV ◽  
A. A. BLOSHKIN
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Binding Energy ◽  
Space Charge ◽  
Tensile Strain ◽  
Electronic States ◽  
Band Alignment ◽  
Type Ii ◽  
Electron Confinement ◽  
Si Quantum Dots

Space-charge spectroscopy was employed to study electronic structure in a stack of four layers of Ge quantum dots coherently embedded in an n-type Si (001) matrix. Evidence for an electron confinement in the vicinity of Ge dots was found. From the frequency-dependent measurements the electron binding energy was determined to be ~50 meV, which is consistent with the results of numerical analysis. The data are explained by a modification of the conduction band alignment induced by inhomogeneous tensile strain in Si around the buried Ge dots.

scholarly journals High-Resolution Valley Spectroscopy of Si Quantum Dots

2017 ◽  
Vol 119 (17) ◽  
Author(s):  
X. Mi ◽  
Csaba G. Péterfalvi ◽  
Guido Burkard ◽  
J. R. Petta
Keyword(s):  
Quantum Dots ◽  
High Resolution ◽  
Si Quantum Dots

A Nanoscale Adventure with Silicon: Synthesis, Surface Chemistry, and other Surprises

2015 ◽  
Vol 242 ◽  
pp. 383-390
Author(s):  
Md Hosnay Mobarok ◽  
Tapas K. Purkait ◽  
Jonathan G.C. Veinot
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Surface Chemistry ◽  
Research Group ◽  
Size Dependent ◽  
Earth Abundant ◽  
Potential Applications ◽  
Si Quantum Dots

The preparation and surface chemistry Si quantum dots (SiQDs) are currently an intense focus of research because of their size dependent optical properties and many potential applications. SiQDs offer several advantages over other quantum dots; Si is earth abundant, non-toxic and biocompatible. This account briefly highlights recent advancements made by our research group related to the synthesis, functionalization, surface dependent optical properties and applications of SiQDs.

Non-equilibrium transport in arrays of type-II Ge/Si quantum dots

2004 ◽  
Vol 1 (1) ◽  
pp. 21-24 ◽  
Author(s):  
N.P. Stepina ◽  
A.I. Yakimov ◽  
A.V. Dvurechenskii ◽  
A.V. Nenashev ◽  
A.I. Nikiforov
Keyword(s):  
Quantum Dots ◽  
Type Ii ◽  
Si Quantum Dots ◽  
Non Equilibrium
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