In situ transmission electron microscopy studies and real-time digital imaging

2001 ◽  
Vol 203 (1) ◽  
pp. 128-133 ◽  
Author(s):  
R. Alani ◽  
M. Pan
RSC Advances ◽  
2015 ◽  
Vol 5 (100) ◽  
pp. 82342-82345 ◽  
Author(s):  
Tae-Young Ahn ◽  
Seung-Pyo Hong ◽  
Seong-Il Kim ◽  
Young-Woon Kim

Real-time liquid-cell transmission electron microscopy was utilized to gain insight into the growth and dissolution of silver nanoparticles.


Nanoscale ◽  
2017 ◽  
Vol 9 (34) ◽  
pp. 12479-12485
Author(s):  
Xing Huang ◽  
Travis Jones ◽  
Hua Fan ◽  
Marc-Georg Willinger

Void formation and anisotropic growth in ZnS ribbons have been studied by in situ transmission electron microscopy.


Nanoscale ◽  
2020 ◽  
Vol 12 (47) ◽  
pp. 23967-23974
Author(s):  
Tingting Yang ◽  
Hui Li ◽  
Jingzhao Chen ◽  
Hongjun Ye ◽  
Jingming Yao ◽  
...  

We herein present a real time study of a Li–CO2 battery with a Ni–Ru/MnO2 cathode by using the in situ environmental transmission electron microscopy (ETEM) technique.


Author(s):  
J. T. Sizemore ◽  
D. G. Schlom ◽  
Z. J. Chen ◽  
J. N. Eckstein ◽  
I. Bozovic ◽  
...  

Investigators observe large critical currents for superconducting thin films deposited epitaxially on single crystal substrates. The orientation of these films is often characterized by specifying the unit cell axis that is perpendicular to the substrate. This omits specifying the orientation of the other unit cell axes and grain boundary angles between grains of the thin film. Misorientation between grains of YBa2Cu3O7−δ decreases the critical current, even in those films that are c axis oriented. We presume that these results are similar for bismuth based superconductors and report the epitaxial orientations and textures observed in such films.Thin films of nominally Bi2Sr2CaCu2Ox were deposited on MgO using molecular beam epitaxy (MBE). These films were in situ grown (during growth oxygen was incorporated and the films were not oxygen post-annealed) and shuttering was used to encourage c axis growth. Other papers report the details of the synthesis procedure. The films were characterized using x-ray diffraction (XRD) and transmission electron microscopy (TEM).


Author(s):  
John F. Mansfield

The current imaging trend in optical microscopy, scanning electron microscopy (SEM) or transmission electron microscopy (TEM) is to record all data digitally. Most manufacturers currently market digital acquisition systems with their microscope packages. The advantages of digital acquisition include: almost instant viewing of the data as a high-quaity positive image (a major benefit when compared to TEM images recorded onto film, where one must wait until after the microscope session to develop the images); the ability to readily quantify features in the images and measure intensities; and extremely compact storage (removable 5.25” storage devices which now can hold up to several gigabytes of data).The problem for many researchers, however, is that they have perfectly serviceable microscopes that they routinely use that have no digital imaging capabilities with little hope of purchasing a new instrument.


Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove

The silicides CoSi2 and NiSi2 are both metallic with the fee flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) Consequently epitaxial cobalt and nickel disilicide can be grown on silicon. If these layers are formed by ultra high vacuum (UHV) deposition (also known as molecular beam epitaxy or MBE) their thickness can be controlled to within a few monolayers. Such ultrathin metal/silicon systems have many potential applications: for example electronic devices based on ballistic transport. They also provide a model system to study the properties of heterointerfaces. In this work we will discuss results obtained using in situ and ex situ transmission electron microscopy (TEM).In situ TEM is suited to the study of MBE growth for several reasons. It offers high spatial resolution and the ability to penetrate many monolayers of material. This is in contrast to the techniques which are usually employed for in situ measurements in MBE, for example low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED), which are both sensitive to only a few monolayers at the surface.


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