Current collapse reduction in InAlN/GaN MOS HEMTs by in situ surface pre-treatment and atomic layer deposition of ZrO2 high-k gate dielectrics

2009 ◽  
Vol 45 (11) ◽  
pp. 570 ◽  
Author(s):  
S. Abermann ◽  
G. Pozzovivo ◽  
J. Kuzmik ◽  
C. Ostermaier ◽  
C. Henkel ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Current Collapse ◽  
Layer Deposition ◽  
High K ◽  
Pre Treatment

Atomic layer deposition of sub-10 nm high-K gate dielectrics on top-gated MoS2 transistors without surface functionalization

2018 ◽  
Vol 443 ◽  
pp. 421-428 ◽  
Author(s):  
Yu-Shu Lin ◽  
Po-Hsien Cheng ◽  
Kuei-Wen Huang ◽  
Hsin-Chih Lin ◽  
Miin-Jang Chen
Keyword(s):  
Atomic Layer Deposition ◽  
Surface Functionalization ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Layer Deposition ◽  
High K

In-situ characterization of Ga2O passivation of In0.53Ga0.47As prior to high-k dielectric atomic layer deposition

2011 ◽  
Vol 99 (4) ◽  
pp. 042904 ◽  
Author(s):  
M. Milojevic ◽  
R. Contreras-Guerrero ◽  
E. O’Connor ◽  
B. Brennan ◽  
P. K. Hurley ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
In Situ Characterization ◽  
Layer Deposition ◽  
High K ◽  
High K Dielectric

Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-κ gate dielectrics

RSC Advances ◽  
2016 ◽  
Vol 6 (20) ◽  
pp. 16301-16307 ◽  
Author(s):  
Kaveh Ahadi ◽  
Ken Cadien
Keyword(s):  
Atomic Layer Deposition ◽  
Linear Growth ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Low Density ◽  
Layer Deposition ◽  
Anomalous Growth

Anomalous growth per cycle was observed using in situ ellipsometry during the initial cycles of plasma enhanced atomic layer deposition of high-κ dielectrics, while thermal atomic layer deposition of these oxides exhibited linear growth per cycle.

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