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Atomic Layer Deposition for CMOS Scaling: High-k Gate Dielectrics on Si, Ge, and III-V Semiconductors
ECS Transactions
◽
10.1149/1.2779083
◽
2019
◽
Vol 11
(7)
◽
pp. 187-200
◽
Cited By ~ 4
Author(s):
Martin Frank
Keyword(s):
Atomic Layer Deposition
◽
Gate Dielectrics
◽
Atomic Layer
◽
Cmos Scaling
◽
Layer Deposition
◽
High K
Download Full-text
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Cited By
References
ChemInform Abstract: Atomic Layer Deposition for CMOS Scaling: High-k Gate Dielectrics on Si, Ge, and III-V Semiconductors
ChemInform
◽
10.1002/chin.200802230
◽
2008
◽
Vol 39
(2)
◽
Author(s):
Martin M. Frank
Keyword(s):
Atomic Layer Deposition
◽
Gate Dielectrics
◽
Atomic Layer
◽
Cmos Scaling
◽
Layer Deposition
◽
High K
Download Full-text
Atomic Layer Deposition for CMOS Scaling: High-k Gate Dielectrics on Si, Ge, and III-V Semiconductors
ECS Meeting Abstracts
◽
10.1149/ma2007-02/17/995
◽
2007
◽
Keyword(s):
Atomic Layer Deposition
◽
Gate Dielectrics
◽
Atomic Layer
◽
Cmos Scaling
◽
Layer Deposition
◽
High K
Download Full-text
Atomic layer deposition of sub-10 nm high-K gate dielectrics on top-gated MoS2 transistors without surface functionalization
Applied Surface Science
◽
10.1016/j.apsusc.2018.02.225
◽
2018
◽
Vol 443
◽
pp. 421-428
◽
Cited By ~ 12
Author(s):
Yu-Shu Lin
◽
Po-Hsien Cheng
◽
Kuei-Wen Huang
◽
Hsin-Chih Lin
◽
Miin-Jang Chen
Keyword(s):
Atomic Layer Deposition
◽
Surface Functionalization
◽
Gate Dielectrics
◽
Atomic Layer
◽
Layer Deposition
◽
High K
Download Full-text
Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursors
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena
◽
10.1116/1.3025865
◽
2009
◽
Vol 27
(1)
◽
pp. 389
◽
Cited By ~ 17
Author(s):
S. Dueñas
◽
H. Castán
◽
H. Garcia
◽
A. Gómez
◽
L. Bailón
◽
...
Keyword(s):
Electrical Properties
◽
Atomic Layer Deposition
◽
Hafnium Oxide
◽
Gate Dielectrics
◽
Atomic Layer
◽
Ozone Precursors
◽
Layer Deposition
◽
High K
Download Full-text
Low-voltage solution-processed n-channel organic field-effect transistors with high-k HfO2 gate dielectrics grown by atomic layer deposition
Applied Physics Letters
◽
10.1063/1.3269579
◽
2009
◽
Vol 95
(22)
◽
pp. 223303
◽
Cited By ~ 33
Author(s):
Shree Prakash Tiwari
◽
Xiao-Hong Zhang
◽
William J. Potscavage
◽
Bernard Kippelen
Keyword(s):
Atomic Layer Deposition
◽
Field Effect
◽
Low Voltage
◽
Gate Dielectrics
◽
Field Effect Transistors
◽
Atomic Layer
◽
Organic Field Effect Transistors
◽
Solution Processed
◽
Layer Deposition
◽
High K
Download Full-text
Innovation IV - Enacting high-k gate dielectrics and atomic layer deposition technology, 1996-2007
Fortunes of High-Tech: a History of Innovation at ASM International
◽
10.1117/3.2572061.int9
◽
2019
◽
Author(s):
Jorijn van Duijn
Keyword(s):
Atomic Layer Deposition
◽
Gate Dielectrics
◽
Atomic Layer
◽
Layer Deposition
◽
High K
◽
Deposition Technology
Download Full-text
X-ray reflectometry and x-ray fluorescence monitoring of the atomic layer deposition process for high-k gate dielectrics
Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena
◽
10.1116/1.2009774
◽
2005
◽
Vol 23
(5)
◽
pp. 2244
◽
Cited By ~ 8
Author(s):
P. Y. Hung
◽
Carolyn Gondran
◽
Amiya Ghatak-Roy
◽
Shinichi Terada
◽
Ben Bunday
◽
...
Keyword(s):
Atomic Layer Deposition
◽
Gate Dielectrics
◽
Atomic Layer
◽
Deposition Process
◽
X Ray
◽
Atomic Layer Deposition Process
◽
Layer Deposition
◽
High K
Download Full-text
Metal Organic Atomic Layer Deposition of High-k Gate Dielectrics Using Plasma Oxidation
Japanese Journal of Applied Physics
◽
10.1143/jjap.42.l685
◽
2003
◽
Vol 42
(Part 2, No. 6B)
◽
pp. L685-L687
◽
Cited By ~ 23
Author(s):
Kazuhiko Endo
◽
Toru Tatsumi
Keyword(s):
Atomic Layer Deposition
◽
Gate Dielectrics
◽
Atomic Layer
◽
Plasma Oxidation
◽
Layer Deposition
◽
High K
◽
Metal Organic
Download Full-text
Current collapse reduction in InAlN/GaN MOS HEMTs by in situ surface pre-treatment and atomic layer deposition of ZrO2 high-k gate dielectrics
Electronics Letters
◽
10.1049/el.2009.0728
◽
2009
◽
Vol 45
(11)
◽
pp. 570
◽
Cited By ~ 17
Author(s):
S. Abermann
◽
G. Pozzovivo
◽
J. Kuzmik
◽
C. Ostermaier
◽
C. Henkel
◽
...
Keyword(s):
Atomic Layer Deposition
◽
Gate Dielectrics
◽
Atomic Layer
◽
Current Collapse
◽
Layer Deposition
◽
High K
◽
Pre Treatment
Download Full-text
Electrical properties of 0.5 nm thick Hf-silicate top‐layer∕HfO2 gate dielectrics by atomic layer deposition
Applied Physics Letters
◽
10.1063/1.1941455
◽
2005
◽
Vol 86
(22)
◽
pp. 222904
◽
Cited By ~ 20
Author(s):
Satoshi Kamiyama
◽
Takayoshi Miura
◽
Yasuo Nara
◽
Tsunetoshi Arikado
Keyword(s):
Electrical Properties
◽
Atomic Layer Deposition
◽
Gate Dielectrics
◽
Atomic Layer
◽
Layer Deposition
Download Full-text
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