AlGaN/GaN HEMTs: RECENT DEVELOPMENTS AND FUTURE DIRECTIONS
2008 ◽
Vol 18
(04)
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pp. 913-922
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Keyword(s):
Rf Power
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This paper provides an overview of recent work and future directions in Gallium Nitride transistor research. We discuss the present status of Ga -polar AlGaN / GaN HEMTs and the innovations that have led to record RF power performance. We describe the development of N -polar AlGaN / GaN HEMTs with microwave power performance comparable with state-of-art Ga -polar AlGaN / GaN HEMTs. Finally we will discuss how GaN -based field effect transistors could be promising for a less obvious application: low-power high-speed digital circuits.
Keyword(s):
Keyword(s):
1985 ◽
Vol 1
(4)
◽
pp. 35-38
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2016 ◽
Vol 3
(2)
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pp. 1600421
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