Low temperature growth of GaAs quantum well lasers by modulated beam epitaxy

1991 ◽  
Vol 27 (12) ◽  
pp. 1072 ◽  
Author(s):  
S. Xin ◽  
K.F. Longenbach ◽  
W.I. Wang
1991 ◽  
Vol 228 ◽  
Author(s):  
S. Xin ◽  
K. F. Longenbach ◽  
C. Schwartz ◽  
Y. Jiang ◽  
W. I. Wang

ABSTRACTGaAs single quantum well lasers have been successfully grown at low temperatures by a modulated beam epitaxy process in which the Al/Ga flux is held constant while the As flux is periodically shut off to produce a metal-rich surface. Devices grown at a substrate temperature of 500 °C exhibit threshold current densities below 1 kA/cm2. This value is lower than normally grown low temperature lasers and is the lowest achieved by any low substrate temperature growth technique. In addition, low temperature (10 K) photoluminescence of single quantum wells grown with this technique exhibit full-width half maximum values, comparable to that attainable by higher temperature growth techniques. The improved quality of these low temperature grown quantum structures is attributed to both a smoothing of the growth front and a reduction of excess As during the modulated beam epitaxy process. The high growth rates and less frequent shutter operation of this technique make it a more practical than migration enhanced epitaxy or atomic layer epitaxy for low temperature growth.


2021 ◽  
Vol 26 ◽  
pp. 102050
Author(s):  
Mehdi Dehghani ◽  
Ershad Parvazian ◽  
Nastaran Alamgir Tehrani ◽  
Nima Taghavinia ◽  
Mahmoud Samadpour

ACS Omega ◽  
2021 ◽  
Author(s):  
Muhammad Aniq Shazni Mohammad Haniff ◽  
Nur Hamizah Zainal Ariffin ◽  
Poh Choon Ooi ◽  
Mohd Farhanulhakim Mohd Razip Wee ◽  
Mohd Ambri Mohamed ◽  
...  

2021 ◽  
Vol 3 (3) ◽  
pp. 1244-1251
Author(s):  
Hyunjin Joh ◽  
Gopinathan Anoop ◽  
Won-June Lee ◽  
Dipjyoti Das ◽  
Jun Young Lee ◽  
...  

1983 ◽  
Vol 61 (7) ◽  
pp. 1935-1940 ◽  
Author(s):  
C. J. Andrews ◽  
Y. C. Paliwal

Cold hardness and ice encasement tolerance of 'Fredrick' and 'Norstar' winter wheats as affected by infection with barley yellow dwarf virus (BYDV) were determined during inoculation, disease development periods, and low-temperature growth. Plants were either prehardened to cold, or warm grown before infection; two disease development periods (DDP) were utilized. A long DDP induced greater pathogenesis and greater hardiness reduction than a short DDP. The effect of virus infection on the final level of hardiness of prehardened plants was generally greater than on that of nonprehardened plants. Viral infection reduced hardiness up to 3.5 °C in 'Fredrick' wheat, but reductions of 6–10 °C below hardiness potential were recorded after certain environmental regimes allowing disease development. Ice tolerance was reduced by BYDV infection in early low-temperature growth but was increased by infection after 4 months at low temperature. This increase in survival was associated with higher dry matter content in infected than in noninfected plants.


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