Low-temperature growth of 850 nm quantum well modulators for monolithic integration to very large scale integrated electronics on GaAs

1995 ◽  
Vol 13 (2) ◽  
pp. 653 ◽  
Author(s):  
J. E. Cunningham
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Large Scale ◽  
Monolithic Integration ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Integrated Electronics

Low Temperature Growth of Gaas Quantum Well Lasers by Modulated Beam Epitaxy

1991 ◽  
Vol 228 ◽  
Author(s):  
S. Xin ◽  
K. F. Longenbach ◽  
C. Schwartz ◽  
Y. Jiang ◽  
W. I. Wang
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Substrate Temperature ◽  
Quantum Wells ◽  
High Growth ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Temperature Growth ◽  
Low Temperature Growth

ABSTRACTGaAs single quantum well lasers have been successfully grown at low temperatures by a modulated beam epitaxy process in which the Al/Ga flux is held constant while the As flux is periodically shut off to produce a metal-rich surface. Devices grown at a substrate temperature of 500 °C exhibit threshold current densities below 1 kA/cm2. This value is lower than normally grown low temperature lasers and is the lowest achieved by any low substrate temperature growth technique. In addition, low temperature (10 K) photoluminescence of single quantum wells grown with this technique exhibit full-width half maximum values, comparable to that attainable by higher temperature growth techniques. The improved quality of these low temperature grown quantum structures is attributed to both a smoothing of the growth front and a reduction of excess As during the modulated beam epitaxy process. The high growth rates and less frequent shutter operation of this technique make it a more practical than migration enhanced epitaxy or atomic layer epitaxy for low temperature growth.

Low-temperature growth and characterization of epitaxial ZnO nanorods by metalorganic chemical vapor deposition

2007 ◽  
Vol 22 (7) ◽  
pp. 2032-2036 ◽  
Author(s):  
Dong Chan Kim ◽  
Bo Hyun Kong ◽  
Sung-Yun Jeon ◽  
Ji-Beom Yoo ◽  
Hyung Koun Cho ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Large Scale ◽  
Metalorganic Chemical Vapor Deposition ◽  
Zno Nanorods ◽  
Chemical Vapor ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Metalorganic Chemical

By injecting additional argon gas, we were able to grow one-dimensional ZnO nanorod arrays with a uniform distribution on a large scale at a low temperature of less than 330 °C by metalorganic chemical vapor deposition. All of the nanorods grown on the sapphire substrate had a 30° in-plane rotation with respect to the substrate and showed the epitaxial characteristics of [10¯10]ZnO//[11¯20]sapphire, despite the low-temperature growth. These ZnO nanorods with high crystalline quality exhibited a high enhancement factor and low turn-on field value, thus having good potential to be used as a field emitter.

Monolithic integration of 850 nm quantum well modulators to very large scale integrated electronics on GaAs

1995 ◽  
Vol 150 ◽  
pp. 1363-1367 ◽  
Author(s):  
J.E. Cunningham ◽  
K.W. Goossen ◽  
W.Y. Jan ◽  
J.A. Walker ◽  
R.N. Pathak
Keyword(s):  
Quantum Well ◽  
Large Scale ◽  
Monolithic Integration ◽  
Integrated Electronics

Low-temperature growth of large-scale, single-crystalline graphene on Ir(111)

2019 ◽  
Vol 28 (5) ◽  
pp. 056107 ◽  
Author(s):  
Hui Guo ◽  
Hui Chen ◽  
Yande Que ◽  
Qi Zheng ◽  
Yu-Yang Zhang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Large Scale ◽  
Temperature Growth ◽  
Single Crystalline ◽  
Low Temperature Growth

A facile low-temperature growth of large-scale uniform two-end-open Ge nanotubes with hierarchical branches

2013 ◽  
Vol 1 (35) ◽  
pp. 5471 ◽  
Author(s):  
Xiangdong Li ◽  
Guowen Meng ◽  
An-Ping Li ◽  
Zhaoqin Chu ◽  
Xiaoguang Zhu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Large Scale ◽  
Temperature Growth ◽  
Low Temperature Growth
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