Room temperature negative differential resistance of metal (CoSi2)/insulator (CaF2) resonant tunnelling diode

1992 ◽  
Vol 28 (15) ◽  
pp. 1432 ◽  
Author(s):  
T. Suemasu ◽  
M. Watanabe ◽  
M. Asada ◽  
N. Suzuki
2001 ◽  
Vol 676 ◽  
Author(s):  
B.S. Satyanarayana ◽  
A. Hiraki

ABSTRACTMultilayered cold cathodes made of spin coated nanocrystalline diamond and cathodic arc process grown nanocluster carbon films, were studied. The nanocrystalline diamond was first coated on to the substrate. The nanocluster carbon films were then deposited on the seeded nanocrystalline diamond coated substrates using the cathodic arc process at room temperature. Theresultant hetrostructured microcathodes were observed to exhibit electron emission currents of 1μA/cm2 at fields as low as 1.2 V/μm. Further some of the samples seem to exhibit I-V characteristics witha negative differential resistance region at room temperature conditions. This negative differential resistance or the resonant tunneling behaviour was observed to be dependent on the nanoseeded diamond size and concentration for a given nanocluster carbon film.


1987 ◽  
Vol 23 (3) ◽  
pp. 116 ◽  
Author(s):  
M. Razeghi ◽  
A. Tardella ◽  
R.A. Davies ◽  
A.P. Long ◽  
M.J. Kelly ◽  
...  

ACS Nano ◽  
2019 ◽  
Vol 13 (7) ◽  
pp. 8193-8201 ◽  
Author(s):  
Sidi Fan ◽  
Quoc An Vu ◽  
Sanghyub Lee ◽  
Thanh Luan Phan ◽  
Gyeongtak Han ◽  
...  

2002 ◽  
Vol 12 (10) ◽  
pp. 2927-2930 ◽  
Author(s):  
Irena Kratochvilova ◽  
Milan Kocirik ◽  
Adriana Zambova ◽  
Jeremiah Mbindyo ◽  
Thomas E. Mallouk ◽  
...  

2002 ◽  
Vol 25 (3) ◽  
pp. 245-248
Author(s):  
K. F. Yarn

An AlInP delta-doped schottky diode exhibiting negative differential resistance (NDR) behavior is demonstrated for the first time. The NDR characteristics with a peak to valley ratio of 5.5 and peak current density of1KA/cm2were achieved at room temperature. In addition, the maximum available power is estimated up to5W/cm2. The mechanism for such performance is phenomenologically analyzed by the combination of resonant interband tunneling (RIT) and thermionic emission processes associated with tunneling effect on the metal-semiconductor (MS) interface.


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