Resonant Tunnelling Behaviour in Multilayered Cold Cathodes Made of Nanoseeded Diamond and Nanocluster Carbon

ABSTRACTMultilayered cold cathodes made of spin coated nanocrystalline diamond and cathodic arc process grown nanocluster carbon films, were studied. The nanocrystalline diamond was first coated on to the substrate. The nanocluster carbon films were then deposited on the seeded nanocrystalline diamond coated substrates using the cathodic arc process at room temperature. Theresultant hetrostructured microcathodes were observed to exhibit electron emission currents of 1μA/cm2 at fields as low as 1.2 V/μm. Further some of the samples seem to exhibit I-V characteristics witha negative differential resistance region at room temperature conditions. This negative differential resistance or the resonant tunneling behaviour was observed to be dependent on the nanoseeded diamond size and concentration for a given nanocluster carbon film.

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Field emission from heterostructured nanoseeded diamond and nanocluster carbon cathodes

MRS Proceedings ◽

10.1557/proc-621-r6.7.1 ◽

2000 ◽

Vol 621 ◽

Author(s):

B.S. Satyanarayana ◽

K. Nishimura ◽

A. Hiraki ◽

W.I. Milne

Keyword(s):

Field Emission ◽

Electron Emission ◽

Negative Differential Resistance ◽

Resonant Tunneling ◽

Room Temperature ◽

Differential Resistance ◽

Carbon Films ◽

Nanocrystalline Diamond ◽

Cold Cathodes ◽

Cathodic Arc

ABSTRACTNovel heterostructured cold cathodes made of nanoseeded diamond and cathodic arc process grown nanocluster carbon films, were studied. The nanocrystalline diamond with varying diamond concentration was first coated on to the substrate. The nanocluster carbon films were then deposited on the nanoseeded diamond coated substrates using the cathodic arc process at room temperature. The resultant heterostructured microcathodes were observed to exhibit electron emission currents of 1μA/cm2 at low fields of 1.2 - 5 V/μm. Further some of the samples seem to exhibit I-V characteristics with a negative differential resistance region at room temperature conditions. This negative differential resistance or the resonant tunneling behaviour was observed to be dependent on the nanoseeded diamond concentration.

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Field Emission from Novel Room Temperature Grown Carbon Based Multilayered Cathodes

MRS Proceedings ◽

10.1557/proc-685-d15.5.1 ◽

2001 ◽

Vol 685 ◽

Cited By ~ 1

Author(s):

B.S. Satyanarayana ◽

K. Nishimura ◽

A. Hiraki

Keyword(s):

Electron Emission ◽

Room Temperature ◽

Carbon Films ◽

Nanocrystalline Diamond ◽

Emission Characteristics ◽

Amorphous Carbon Films ◽

Cold Cathodes ◽

Tetrahedral Amorphous Carbon ◽

Low Field ◽

Cathodic Arc

AbstractLow field electron emission from novel room temperature grown multilayered cold cathodes were studied. The cathodes consisted of a layer of nanocrystalline diamond and a layer of nanocluster carbon films. The nanocrystalline diamond was first coated on to the substrate. The nanocluster carbon films and the tetrahedral amorphous carbon films were then deposited on the nanocrystalline diamond coated substrates using the cathodic arc process at room temperature. The heterostructured microcathodes were observed to exhibit electron emission currents of 1µA/cm2 at fields as low as 1 V/µm. The effect of the nanoseeded diamond size and concentration and the properties of different nanocluster carbon films on emission characteristics is presented.

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Resonant Tunneling and Room Temperature Negative Differential Resistance in TiO_2/MEH-PPV Junctions for Quantum Functional Circuits

Frontiers in Optics ◽

10.1364/ope.2006.optuc4 ◽

2006 ◽

Author(s):

Woo-Jun Yoon ◽

Andrew P. Bonifas ◽

Richard L. McCreery ◽

Paul R. Berger

Keyword(s):

Negative Differential Resistance ◽

Resonant Tunneling ◽

Room Temperature ◽

Differential Resistance

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Formation of Large Conduction Band Discontinuities of Heterointerfaces Using CdF2 AND CaF2 on Si(111)

MRS Proceedings ◽

10.1557/proc-448-171 ◽

1996 ◽

Vol 448 ◽

Author(s):

Akira Izumi ◽

Noriyuki Matsubara ◽

Yusuke Kushida ◽

Kazuo Tsutsui ◽

Nikolai S. Sokolov

Keyword(s):

Conduction Band ◽

Negative Differential Resistance ◽

Resonant Tunneling ◽

Room Temperature ◽

Quantum Effect ◽

Differential Resistance ◽

Resonant Tunneling Diodes ◽

Current Ratio ◽

Si Substrates ◽

Tunneling Diodes

AbstractWe proposed use of a new CdF2/CaF2 heterointerface for the formation of large conduction band discontinuities to apply quantum effect devices fabricated on Si substrates. Resonant tunneling diodes using this heterointerface on Si were fabricated and negative differential resistance whose P/V current ratio of 24 at highest was observed at room temperature.

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