1.55 µm InGaAsP/InP laser buried in a high-resistivity epitaxial layer on a semi-insulating InP substrate

1994 ◽  
Vol 30 (18) ◽  
pp. 1481-1482 ◽  
Author(s):  
Y. Sakai ◽  
M. Fukuda ◽  
S. Matsumoto ◽  
Y. Itaya ◽  
M. Yamamoto
Keyword(s):  
Epitaxial Layer ◽  
High Resistivity ◽  
Inp Substrate

scholarly journals Analyses of Pinned Photodiodes With High Resistivity Epitaxial Layer for Indirect Time-of-Flight Applications

IEEE Access ◽  
2020 ◽  
Vol 8 ◽  
pp. 187575-187583
Author(s):  
Xuanbin Fang ◽  
Yuan Xu ◽  
Junwei Yang ◽  
Kui Wu
Keyword(s):  
Epitaxial Layer ◽  
Time Of Flight ◽  
High Resistivity

Effect of Elastic Mismatch and Anisotropy on Cracking of Brittle Films on Elastic Substrates

2011 ◽  
Vol 465 ◽  
pp. 235-238
Author(s):  
Michal Kotoul ◽  
Tomas Vyslouzil
Keyword(s):  
Weight Function ◽  
Epitaxial Layer ◽  
Elastic Anisotropy ◽  
Minimum Energy ◽  
Inp Substrate ◽  
Elastic Substrates ◽  
Elastic Mismatch

The paper analyzes the depth and spacing of cracks in a tensile strained In0.25Ga0.75As epitaxial layer on a InP substrate using the minimum energy theorem. The elastic anisotropy of both the layer and the substrate is considered. The concept of weight function obtained numerically by means of detailed FEM is employed.

RESULTS ON PASSIVATION OF InP BY PHOTO-CVD SiO2 AND SiNx OBTAINED BY USING THE LOW-FREQUENCY NOISE MEASUREMENT TECHNIQUE

2001 ◽  
Vol 01 (01) ◽  
pp. L35-L43
Author(s):  
P. GOTTWALD ◽  
H. KRÄUTLE ◽  
B. SZENTPÁLI ◽  
H. L. HARTNAGEL
Keyword(s):  
Measurement Technique ◽  
Surface Passivation ◽  
Chemical Vapour ◽  
Low Frequency ◽  
Substrate Material ◽  
High Resistivity ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Inp Substrate ◽  
Surface Conduction

Photo enhanced chemical vapour deposition (PVD) of SiO 2 and Si 3 N 4 has been applied for surface passivation of specially designed n-type InP planar test resistors prepared by mesa etching on a semiinsulating InP substrate. The deposition temperatures were 150, 200 and 300 °C. The low-frequency noise (LFN) measurement technique was used for the characterisation. It was stated that the commercial PVD technology using Hg sensitization results in a low-damage passivation of InP, if a SiO 2 layer is deposited at a temperature around 300 °C. Low 1/f noise and low generation-recombination noise are generated in the test resistors passivated by this technology, and no surface conduction has been caused on the high-resistivity substrate-material holding the resistor patterns. Otherwise, for the PVD deposited Si 3 N 4 layer a significantly higher noise level has been measured, and surface conduction has also appeared.

Radiation tolerance of a column parallel CMOS sensor with high resistivity epitaxial layer

2011 ◽  
Vol 6 (02) ◽  
pp. C02004-C02004 ◽  
Author(s):  
M Deveaux ◽  
J Baudot ◽  
N Chon-Sen ◽  
G Claus ◽  
C Colledani ◽  
...  
Keyword(s):  
Epitaxial Layer ◽  
High Resistivity ◽  
Radiation Tolerance ◽  
Cmos Sensor

Metal Oxide / Silicon Heterostructures: New Solutions for Different Optoelectronic Applications

1997 ◽  
Vol 487 ◽  
Author(s):  
A. Malik ◽  
R. Martins
Keyword(s):  
Epitaxial Layer ◽  
Low Voltage ◽  
Operating Conditions ◽  
High Resistivity ◽  
Surface Barrier ◽  
Ambient Conditions ◽  
Spray Pyrolysis Deposition ◽  
Radiation Resistant ◽  
Pin Photodiodes ◽  
High Resistivity Silicon

AbstractIn this paper we report the success in fabricating FTO/Si surface-barrier photodiodes produced by spray pyrolysis deposition technique, under ambient conditions. Three types of photodetectors for low-voltage-bias operation were developed based on high-resistivity silicon: 1. X-Ray detectors with energy resolution of 16.5% at 661.5 keV (137Cs source), consisting of surface-barrier PIN photodiode with an active area of 50 mm2 operating at 5V reverse bias, scintillator based on monocrystalline Bi4Ge3O12 and preamplifier (noise of 250 e− RMS.); 2. Fastresponse surface-barrier FTO/I n−-n+ silicon epitaxial photodiodes, operating at 10 V bias with rise times of 2 ns at λ = 0.85 μm; 3. Radiation-resistant drift epitaxial surface-barrier PIN photodiodes for unbiased operating conditions, with an exponential impurity distribution in a 8 μm thick epitaxial layer. A built-in electrical field due to the carrier concentration distribution in the epitaxial layer provides a considerable improvement in the “critical fluence” value (3× 1014 cm−2 ) for neutron irradiation.

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