High performance 0.25 μm gate-length AlGaN∕GaN HEMTs on sapphire with transconductance of over 400 mS∕mm

2002 ◽  
Vol 38 (5) ◽  
pp. 252 ◽  
Author(s):  
V. Kumar ◽  
W. Lu ◽  
F.A. Khan ◽  
R. Schwindt ◽  
A. Kuliev ◽  
...  
Keyword(s):  
High Performance ◽  
Gate Length ◽  
Gan Hemts

High performance 0.25 [micro sign]m gate-length AlGaN∕GaN HEMTs on 6H-SiC with power density of 6.7 W∕mm at 18 GHz

2003 ◽  
Vol 39 (22) ◽  
pp. 1609 ◽  
Author(s):  
V. Kumar ◽  
J.-W. Lee ◽  
A. Kuliev ◽  
O. Aktas ◽  
R. Schwindt ◽  
...  
Keyword(s):  
Power Density ◽  
High Performance ◽  
Gate Length ◽  
Gan Hemts

High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with power density of over 4.5 W/mm at 20 GHz

2003 ◽  
Vol 47 (9) ◽  
pp. 1577-1580 ◽  
Author(s):  
V. Kumar ◽  
A. Kuliev ◽  
R. Schwindt ◽  
M. Muir ◽  
G. Simin ◽  
...  
Keyword(s):  
Power Density ◽  
High Performance ◽  
Gate Length ◽  
Gan Hemts

scholarly journals Ab initio perspective of ultra-scaled CMOS from 2D-material fundamentals to dynamically doped transistors

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Aryan Afzalian
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Grand Challenge ◽  
Gate Length ◽  
Delay Performance ◽  
Effect Transistor

AbstractUsing accurate dissipative DFT-NEGF atomistic-simulation techniques within the Wannier-Function formalism, we give a fresh look at the possibility of sub-10-nm scaling for high-performance complementary metal oxide semiconductor (CMOS) applications. We show that a combination of good electrostatic control together with high mobility is paramount to meet the stringent roadmap targets. Such requirements typically play against each other at sub-10-nm gate length for MOS transistors made of conventional semiconductor materials like Si, Ge, or III–V and dimensional scaling is expected to end ~12 nm gate-length (pitch of 40 nm). We demonstrate that using alternative 2D channel materials, such as the less-explored HfS2 or ZrS2, high-drive current down to ~6 nm is, however, achievable. We also propose a dynamically doped field-effect transistor concept, that scales better than its MOSFET counterpart. Used in combination with a high-mobility material such as HfS2, it allows for keeping the stringent high-performance CMOS on current and competitive energy-delay performance, when scaling down to virtually 0 nm gate length using a single-gate architecture and an ultra-compact design (pitch of 22 nm). The dynamically doped field-effect transistor further addresses the grand-challenge of doping in ultra-scaled devices and 2D materials in particular.

High-performance AlGaN/GaN HEMTs on silicon substrates

2003 ◽  
Author(s):  
P. Javorka ◽  
A. Alam ◽  
A. Fox ◽  
M. Marso ◽  
M. Heuken ◽  
...  
Keyword(s):  
High Performance ◽  
Silicon Substrates ◽  
Gan Hemts

scholarly journals Impact of Mole Fraction Variation on Nanoscale SiGe Hybrid FinFET on Insulator

2019 ◽  
Vol 8 (12S2) ◽  
pp. 61-66
Keyword(s):  
Band Gap ◽  
Mole Fraction ◽  
High Performance ◽  
Device Simulation ◽  
Channel Length ◽  
Gate Length ◽  
Electrical Characteristics ◽  
Simulation Results ◽  
High Performance Application ◽  
Device Modelling

This work investigates the performance of SiGe Hybrid JunctionLess FinFET (HJLFinFET) on insulator with different mole fraction x. The band gap difference for different mole fractions are explored. Impact of electrical characteristics and SCE of HJLFinFET are analyzed with fin width 10nm and varying gate length from 5nm-40nm for different mole fraction. Synopsys Sentaurus TCAD tool(sprocess and sdevice) are used in Device modelling and device simulation. Simulation results shows improvement in On current, DIBL and SS. For high performance application SiGe with mole fraction less than 0.3 at channel length less than 10nm are suitable because of the bandgap value is similar to silicon.

Sub-5 nm monolayer germanium selenide (GeSe) MOSFETs: towards a high performance and stable device

Nanoscale ◽  
2020 ◽  
Vol 12 (28) ◽  
pp. 15443-15452
Author(s):  
Ying Guo ◽  
Feng Pan ◽  
Gaoyang Zhao ◽  
Yajie Ren ◽  
Binbin Yao ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Device Performance ◽  
Gate Length ◽  
Germanium Selenide ◽  
Technology Roadmap

ML GeSe field-effect transistors have an excellent device performance, even at the 1 nm gate-length. The on-state current of the devices can fulfill the requirements of the International Technology Roadmap for Semiconductors (2013 version).

High-performance monolithically-integrated E/D mode InAlN/AlN/GaN HEMTs for mixed-signal applications

2010 ◽  
Author(s):  
Yong Tang ◽  
Paul Saunier ◽  
Ronghua Wang ◽  
Andrew Ketterson ◽  
Xiang Gao ◽  
...  
Keyword(s):  
High Performance ◽  
Mixed Signal ◽  
Monolithically Integrated ◽  
Gan Hemts

High Performance of AlGaN/GaN HEMTs Reported on Adhesive Flexible Tape

2011 ◽  
Vol 32 (2) ◽  
pp. 143-145 ◽  
Author(s):  
M. Lesecq ◽  
V. Hoel ◽  
A. Lecavelier des Etangs-Levallois ◽  
E. Pichonat ◽  
Y. Douvry ◽  
...  
Keyword(s):  
High Performance ◽  
Gan Hemts
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