Design of an oscillator with low phase noise and medium output power in a 0.25 µm GaN‐on‐SiC high electron‐mobility transistors technology

2015 ◽  
Vol 9 (8) ◽  
pp. 795-801 ◽  
Author(s):  
Hang Liu ◽  
Xi Zhu ◽  
Chirn Chye Boon ◽  
Xiang Yi
Keyword(s):  
Phase Noise ◽  
Output Power ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Low Phase Noise

AlN-Capped AlInN/GaN High Electron Mobility Transistors with 4.5 W/mm Output Power at 40 GHz

2013 ◽  
Vol 52 (8S) ◽  
pp. 08JN16 ◽  
Author(s):  
Stefano Tirelli ◽  
Diego Marti ◽  
Lorenzo Lugani ◽  
Jean-François Carlin ◽  
Nicolas Grandjean ◽  
...  
Keyword(s):  
Output Power ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

scholarly journals On-Chip Voltage-Controlled Oscillator Based on a Center-Tapped Switched Inductor Using GaN-on-SiC HEMT Technology

Electronics ◽  
2021 ◽  
Vol 10 (23) ◽  
pp. 2928
Author(s):  
Hsuan-Ling Kao
Keyword(s):  
Phase Noise ◽  
Output Power ◽  
Tuning Range ◽  
Frequency Tuning ◽  
High Electron Mobility Transistors ◽  
Voltage Controlled Oscillator ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
On Chip ◽  
Low Phase Noise

This study presents a voltage-controlled oscillator (VCO) in a cross-coupled pair configuration using a multi-tapped switched inductor with two switch-loaded transformers in 0.5 µm GaN technology. Two switch-loaded transformers are placed at the inner and outer portions of the multi-tapped inductor. All the switches are turned off to obtain the lowest sub-band. The outer transformer with three pairs of switches is turned on alternately to provide three sub-band modes. A pair of switches at the inner transformer provide a high-frequency band. Two switch-loaded transformers are turned on to provide the highest sub-band. Six modes are selected to provide a wide tuning range. The frequency tuning range (FTR) of the VCO is 27.8% from 3.81 GHz to 8.04 GHz with a varactor voltage from 13 V to 22 V. At a 1 MHz frequency offset from the carrier frequency of 4.27 GHz, the peak phase noise is −119.17 dBc/Hz. At a power supply of 12 V, the output power of the carrier at 4.27 GHz is 20.9 dBm. The figure of merit is −186.93 dB because the VCO exhibits a high output power, low phase noise, and wide FTR. To the best of the author’s knowledge, the FTR in VCOs made of GaN-based high electron mobility transistors is the widest reported thus far.

Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

2021 ◽  
pp. 108050
Author(s):  
Maria Glória Caño de Andrade ◽  
Luis Felipe de Oliveira Bergamim ◽  
Braz Baptista Júnior ◽  
Carlos Roberto Nogueira ◽  
Fábio Alex da Silva ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Low Frequency Noise ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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