Direct observation of 0.57eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors

2013 ◽  
Vol 80 ◽  
pp. 19-22 ◽  
Author(s):  
A.R. Arehart ◽  
A. Sasikumar ◽  
S. Rajan ◽  
G.D. Via ◽  
B. Poling ◽  
...  
Keyword(s):  
Output Power ◽  
Direct Observation ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Power Reduction ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

AlN-Capped AlInN/GaN High Electron Mobility Transistors with 4.5 W/mm Output Power at 40 GHz

2013 ◽  
Vol 52 (8S) ◽  
pp. 08JN16 ◽  
Author(s):  
Stefano Tirelli ◽  
Diego Marti ◽  
Lorenzo Lugani ◽  
Jean-François Carlin ◽  
Nicolas Grandjean ◽  
...  
Keyword(s):  
Output Power ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

2021 ◽  
pp. 108050
Author(s):  
Maria Glória Caño de Andrade ◽  
Luis Felipe de Oliveira Bergamim ◽  
Braz Baptista Júnior ◽  
Carlos Roberto Nogueira ◽  
Fábio Alex da Silva ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Low Frequency Noise ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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