Phase Noise Enhancement of the GaAs High Electron Mobility Transistors Using Micromachined Cavity Resonators at Ka-band

1999 ◽  
Vol 38 (Part 2, No. 6A/B) ◽  
pp. L601-L602 ◽  
Author(s):  
Insang Song ◽  
Chungwoo Kim ◽  
Youngwoo Kwon ◽  
Changyul Cheon ◽  
Cimoo Song
Keyword(s):  
Phase Noise ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Cavity Resonators ◽  
High Electron Mobility ◽  
Ka Band ◽  
Electron Mobility Transistors

scholarly journals Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications

Micromachines ◽  
2020 ◽  
Vol 11 (2) ◽  
pp. 222 ◽  
Author(s):  
Y. C. Lin ◽  
S. H. Chen ◽  
P. H. Lee ◽  
K. H. Lai ◽  
T. J. Huang ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Power Density ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Superior Performance ◽  
Copper Metallization ◽  
High Electron ◽  
High Electron Mobility ◽  
Ka Band ◽  
Electron Mobility Transistors

Copper-metallized gallium nitride (GaN) high-electron-mobility transistors (HEMTs) using a Ti/Pt/Ti diffusion barrier layer are fabricated and characterized for Ka-band applications. With a thick copper metallization layer of 6.8 μm adopted, the device exhibited a high output power density of 8.2 W/mm and a power-added efficiency (PAE) of 26% at 38 GHz. Such superior performance is mainly attributed to the substantial reduction of the source and drain resistance of the device. In addition to improvement in the Radio Frequency (RF) performance, the successful integration of the thick copper metallization in the device technology further reduces the manufacturing cost, making it extremely promising for future fifth-generation mobile communication system applications at millimeter-wave frequencies.

Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

2021 ◽  
pp. 108050
Author(s):  
Maria Glória Caño de Andrade ◽  
Luis Felipe de Oliveira Bergamim ◽  
Braz Baptista Júnior ◽  
Carlos Roberto Nogueira ◽  
Fábio Alex da Silva ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Low Frequency Noise ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

scholarly journals Gate Capacitance and Off-State Characteristics of E-Mode p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors After Gate Stress Bias

2021 ◽  
Author(s):  
Yu-Chen Lai ◽  
Yi-Nan Zhong ◽  
Ming-Yan Tsai ◽  
Yue-Ming Hsin
Keyword(s):  
Leakage Current ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Gate Capacitance ◽  
Enhancement Mode ◽  
Electron Mobility Transistors ◽  
Higher Power ◽  
State Capacitance

AbstractThis study investigated the gate capacitance and off-state characteristics of 650-V enhancement-mode p-GaN gate AlGaN/GaN high-electron-mobility transistors after various degrees of gate stress bias. A significant change was observed in the on-state capacitance when the gate stress bias was greater than 6 V. The corresponding threshold voltage exhibited a positive shift at low gate stress and a negative shift when the gate stress was greater than 6 V, which agreed with the shift observation from the I–V measurement. Moreover, the off-state leakage current increased significantly after the gate stress exceeded 6 V during the off-state characterization although the devices could be biased up to 1000 V without breakdown. The increase in the off-state leakage current would lead to higher power loss.

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